Influence of Precursor Solutions on the Ferroelectric Properties of Sol-Gel-Derived Lanthanum-Modified Lead Titanate (PLT) Thin Films
Precursor chemistry was found to have a dominant effect on the electrical properties of sol‐gel‐derived Pb0.85La0.15TiO3 (PLT15) thin films prepared using different precursor sources for lanthanum, namely, lanthanum acetate dissolved in acetic acid (LAA) and lanthanum 2‐methoxyethoxide in 2‐methoxye...
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| Veröffentlicht in: | Journal of the American Ceramic Society 2004-03, Vol.87 (3), p.384-390 |
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| creator | Bhaskar, S. Majumder, S. B. Fachini, E. R. Katiyar, R. S. |
| description | Precursor chemistry was found to have a dominant effect on the electrical properties of sol‐gel‐derived Pb0.85La0.15TiO3 (PLT15) thin films prepared using different precursor sources for lanthanum, namely, lanthanum acetate dissolved in acetic acid (LAA) and lanthanum 2‐methoxyethoxide in 2‐methoxyethanol (LMM). The LMM‐derived PLT15 films had lower dielectric constants (KLMM= 394, KLAA= 548, measured at 100 kHz, applying 500 mV oscillation voltage), poorer polarization hysteresis characteristics, and higher leakage current densities (JLMM∼ 1.5 × 10−7 A/cm2, JLAA∼ 2 × 10−9 A/cm2, measured at 10 kV/cm field). Differential thermal analysis (DTA) and thermogravimetric analysis (TGA) measurements in conjunction with Fourier transformed infrared spectroscopy (FTIR) and X‐ray photoelectron spectroscopy (XPS) analyses indicate that better removal of C–O moieties are the key step to yield improved electrical properties in these films. Possibly, C–O moieties reduce the metallic oxides to their corresponding metals and the presence of the metallic constituent(s) (e.g., lead), in turn deteriorate the electrical properties. In line with these postulations it was found that, when the pyrolysis temperature is increased from 450° to 550°C, the organic contents of LMM‐derived films are reduced and their electrical properties are indeed comparable to that of the LAA‐derived films. |
| doi_str_mv | 10.1111/j.1551-2916.2004.00384.x |
| format | Article |
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B. ; Fachini, E. R. ; Katiyar, R. S.</creator><creatorcontrib>Bhaskar, S. ; Majumder, S. B. ; Fachini, E. R. ; Katiyar, R. S.</creatorcontrib><description>Precursor chemistry was found to have a dominant effect on the electrical properties of sol‐gel‐derived Pb0.85La0.15TiO3 (PLT15) thin films prepared using different precursor sources for lanthanum, namely, lanthanum acetate dissolved in acetic acid (LAA) and lanthanum 2‐methoxyethoxide in 2‐methoxyethanol (LMM). The LMM‐derived PLT15 films had lower dielectric constants (KLMM= 394, KLAA= 548, measured at 100 kHz, applying 500 mV oscillation voltage), poorer polarization hysteresis characteristics, and higher leakage current densities (JLMM∼ 1.5 × 10−7 A/cm2, JLAA∼ 2 × 10−9 A/cm2, measured at 10 kV/cm field). Differential thermal analysis (DTA) and thermogravimetric analysis (TGA) measurements in conjunction with Fourier transformed infrared spectroscopy (FTIR) and X‐ray photoelectron spectroscopy (XPS) analyses indicate that better removal of C–O moieties are the key step to yield improved electrical properties in these films. Possibly, C–O moieties reduce the metallic oxides to their corresponding metals and the presence of the metallic constituent(s) (e.g., lead), in turn deteriorate the electrical properties. In line with these postulations it was found that, when the pyrolysis temperature is increased from 450° to 550°C, the organic contents of LMM‐derived films are reduced and their electrical properties are indeed comparable to that of the LAA‐derived films.</description><identifier>ISSN: 0002-7820</identifier><identifier>EISSN: 1551-2916</identifier><identifier>DOI: 10.1111/j.1551-2916.2004.00384.x</identifier><identifier>CODEN: JACTAW</identifier><language>eng</language><publisher>Westerville, Ohio: American Ceramics Society</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Electric properties ; Electrical properties of specific thin films ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Experiments ; ferroelectricity/ferroelectric materials ; Heat conductivity ; lead titanate ; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids) ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Niobates, titanates, tantalates, pzt ceramics, etc ; Other inorganic semiconductors ; Physics ; Plastics ; sol-gel ; Solution chemistry ; Thin films</subject><ispartof>Journal of the American Ceramic Society, 2004-03, Vol.87 (3), p.384-390</ispartof><rights>2004 INIST-CNRS</rights><rights>Copyright American Ceramic Society Mar 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4374-1d0fd7e4d9f70ab7d483b5b5a88e7219cec93f2205dd9b834e610d261b198dc13</citedby><cites>FETCH-LOGICAL-c4374-1d0fd7e4d9f70ab7d483b5b5a88e7219cec93f2205dd9b834e610d261b198dc13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1111%2Fj.1551-2916.2004.00384.x$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1111%2Fj.1551-2916.2004.00384.x$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15599271$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bhaskar, S.</creatorcontrib><creatorcontrib>Majumder, S. B.</creatorcontrib><creatorcontrib>Fachini, E. R.</creatorcontrib><creatorcontrib>Katiyar, R. S.</creatorcontrib><title>Influence of Precursor Solutions on the Ferroelectric Properties of Sol-Gel-Derived Lanthanum-Modified Lead Titanate (PLT) Thin Films</title><title>Journal of the American Ceramic Society</title><description>Precursor chemistry was found to have a dominant effect on the electrical properties of sol‐gel‐derived Pb0.85La0.15TiO3 (PLT15) thin films prepared using different precursor sources for lanthanum, namely, lanthanum acetate dissolved in acetic acid (LAA) and lanthanum 2‐methoxyethoxide in 2‐methoxyethanol (LMM). The LMM‐derived PLT15 films had lower dielectric constants (KLMM= 394, KLAA= 548, measured at 100 kHz, applying 500 mV oscillation voltage), poorer polarization hysteresis characteristics, and higher leakage current densities (JLMM∼ 1.5 × 10−7 A/cm2, JLAA∼ 2 × 10−9 A/cm2, measured at 10 kV/cm field). Differential thermal analysis (DTA) and thermogravimetric analysis (TGA) measurements in conjunction with Fourier transformed infrared spectroscopy (FTIR) and X‐ray photoelectron spectroscopy (XPS) analyses indicate that better removal of C–O moieties are the key step to yield improved electrical properties in these films. Possibly, C–O moieties reduce the metallic oxides to their corresponding metals and the presence of the metallic constituent(s) (e.g., lead), in turn deteriorate the electrical properties. In line with these postulations it was found that, when the pyrolysis temperature is increased from 450° to 550°C, the organic contents of LMM‐derived films are reduced and their electrical properties are indeed comparable to that of the LAA‐derived films.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Dielectric, piezoelectric, ferroelectric and antiferroelectric materials</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Electric properties</subject><subject>Electrical properties of specific thin films</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Experiments</subject><subject>ferroelectricity/ferroelectric materials</subject><subject>Heat conductivity</subject><subject>lead titanate</subject><subject>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Niobates, titanates, tantalates, pzt ceramics, etc</subject><subject>Other inorganic semiconductors</subject><subject>Physics</subject><subject>Plastics</subject><subject>sol-gel</subject><subject>Solution chemistry</subject><subject>Thin films</subject><issn>0002-7820</issn><issn>1551-2916</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqNkdFu0zAUhiMEEmXwDhYSCC4SbMepnQsupm7thjIYomjcWY59orqkdrET6B6A955DpyFxhW_sY3_f0bH-LEMEFyStd9uCVBXJaU3mBcWYFRiXghWHR9ns4eFxNsMY05wLip9mz2LcppLUgs2y35eu60dwGpDv0HUAPYboA_ri-3Gw3kXkHRo2gJYQgoce9BCsTqDfQxgsxElLcL6CPj-DYH-CQY1yw0a5cZdfeWM7O12BMmhtB-XUAOjNdbN-i9Yb69DS9rv4PHvSqT7Ci_v9JPu6PF8vLvLm0-pycdrkmpWc5cTgznBgpu44Vi03TJRt1VZKCOCU1Bp0XXaU4sqYuhUlgznBhs5Jmz5rNClPstfHvvvgf4wQB7mzUUPfKwd-jJIKymnNWAJf_gNu_Rhcmk1SwmsmiOAJEkdIBx9jgE7ug92pcCsJllM4ciunDOSUgZzCkX_CkYekvrrvr6JWfReU0zb-9auqrimfBn5_5H7ZHm7_u7_8cLo4T6fk50ffxgEOD74K3-Wcl7ySNx9XEp9dlTdl801-Lu8AchWxig</recordid><startdate>200403</startdate><enddate>200403</enddate><creator>Bhaskar, S.</creator><creator>Majumder, S. B.</creator><creator>Fachini, E. R.</creator><creator>Katiyar, R. S.</creator><general>American Ceramics Society</general><general>Blackwell</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>200403</creationdate><title>Influence of Precursor Solutions on the Ferroelectric Properties of Sol-Gel-Derived Lanthanum-Modified Lead Titanate (PLT) Thin Films</title><author>Bhaskar, S. ; Majumder, S. B. ; Fachini, E. R. ; Katiyar, R. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4374-1d0fd7e4d9f70ab7d483b5b5a88e7219cec93f2205dd9b834e610d261b198dc13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Dielectric, piezoelectric, ferroelectric and antiferroelectric materials</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Electric properties</topic><topic>Electrical properties of specific thin films</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Experiments</topic><topic>ferroelectricity/ferroelectric materials</topic><topic>Heat conductivity</topic><topic>lead titanate</topic><topic>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Niobates, titanates, tantalates, pzt ceramics, etc</topic><topic>Other inorganic semiconductors</topic><topic>Physics</topic><topic>Plastics</topic><topic>sol-gel</topic><topic>Solution chemistry</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bhaskar, S.</creatorcontrib><creatorcontrib>Majumder, S. B.</creatorcontrib><creatorcontrib>Fachini, E. R.</creatorcontrib><creatorcontrib>Katiyar, R. S.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the American Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bhaskar, S.</au><au>Majumder, S. B.</au><au>Fachini, E. R.</au><au>Katiyar, R. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of Precursor Solutions on the Ferroelectric Properties of Sol-Gel-Derived Lanthanum-Modified Lead Titanate (PLT) Thin Films</atitle><jtitle>Journal of the American Ceramic Society</jtitle><date>2004-03</date><risdate>2004</risdate><volume>87</volume><issue>3</issue><spage>384</spage><epage>390</epage><pages>384-390</pages><issn>0002-7820</issn><eissn>1551-2916</eissn><coden>JACTAW</coden><abstract>Precursor chemistry was found to have a dominant effect on the electrical properties of sol‐gel‐derived Pb0.85La0.15TiO3 (PLT15) thin films prepared using different precursor sources for lanthanum, namely, lanthanum acetate dissolved in acetic acid (LAA) and lanthanum 2‐methoxyethoxide in 2‐methoxyethanol (LMM). The LMM‐derived PLT15 films had lower dielectric constants (KLMM= 394, KLAA= 548, measured at 100 kHz, applying 500 mV oscillation voltage), poorer polarization hysteresis characteristics, and higher leakage current densities (JLMM∼ 1.5 × 10−7 A/cm2, JLAA∼ 2 × 10−9 A/cm2, measured at 10 kV/cm field). Differential thermal analysis (DTA) and thermogravimetric analysis (TGA) measurements in conjunction with Fourier transformed infrared spectroscopy (FTIR) and X‐ray photoelectron spectroscopy (XPS) analyses indicate that better removal of C–O moieties are the key step to yield improved electrical properties in these films. Possibly, C–O moieties reduce the metallic oxides to their corresponding metals and the presence of the metallic constituent(s) (e.g., lead), in turn deteriorate the electrical properties. In line with these postulations it was found that, when the pyrolysis temperature is increased from 450° to 550°C, the organic contents of LMM‐derived films are reduced and their electrical properties are indeed comparable to that of the LAA‐derived films.</abstract><cop>Westerville, Ohio</cop><pub>American Ceramics Society</pub><doi>10.1111/j.1551-2916.2004.00384.x</doi><tpages>7</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Electric properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Experiments ferroelectricity/ferroelectric materials Heat conductivity lead titanate Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Materials science Methods of deposition of films and coatings film growth and epitaxy Niobates, titanates, tantalates, pzt ceramics, etc Other inorganic semiconductors Physics Plastics sol-gel Solution chemistry Thin films |
| title | Influence of Precursor Solutions on the Ferroelectric Properties of Sol-Gel-Derived Lanthanum-Modified Lead Titanate (PLT) Thin Films |
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