Dynamic degradation in MOSFET' s. II. Application in the circuitenvironment

Dynamic degradation in MOSFET' s. II. Application in the circuitenvironment

For pt.I, see ibid., vol.38 no.8, pp.1852-1858, Aug. 1991. The physical effects discussed in Pt.I are classified with respect to real operation of devices in circuits from an engineer's viewpoint. Stress results from different kinds of logic stages are discussed and relations set up between sta...

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Veröffentlicht in:IEEE transactions on electron devices 1991-08, Vol.38 (8), p.1859-1867
Hauptverfasser: Weber, W, Brox, H M, Kunemund, T, Muhlhoff, M, Schmitt-Landsiedel, D
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container_end_page 1867
container_issue 8
container_start_page 1859
container_title IEEE transactions on electron devices
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creator Weber, W
Brox, H M
Kunemund, T
Muhlhoff, M
Schmitt-Landsiedel, D
description For pt.I, see ibid., vol.38 no.8, pp.1852-1858, Aug. 1991. The physical effects discussed in Pt.I are classified with respect to real operation of devices in circuits from an engineer's viewpoint. Stress results from different kinds of logic stages are discussed and relations set up between static and dynamic lifetimes. It is shown that within certain limited error boundaries, the static approach is essentially valid as long as stress conditions are considered that are oriented to operation in digital logic. The transmission gate is investigated separately, because in this case specific phenomena caused by bidirectional stress must be considered
doi_str_mv 10.1109/16.119026
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title Dynamic degradation in MOSFET' s. II. Application in the circuitenvironment
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