Nano-scale patterning on sulfur terminated GaAs (001) surface by scanning tunneling microscope

We perform nano-scale patterning on a sulfur (S) terminated GaAs (001) surface by a scanning tunneling microscope (STM) in ultra-high vacuum (UHV). A multi-layer of S deposited by using (NH4)2Sx solution is changed to a mono-layer after annealing at 560°C for 15h, which terminates the GaAs (001) sur...

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Veröffentlicht in:	Applied surface science 2004-10, Vol.237 (1-4), p.577-582
Hauptverfasser:	Yagishita, Yuki, Toda, Yusuke, Hirai, Masakazu, Fujishiro, Hiroki Inomata
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology GaAs Groove structure Materials science Methods of nanofabrication Nano-scale patterning Nano-structure Nanoscale pattern formation Physics Scanning tunneling microscope Sulfur termination
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