Fully depleted dual-gated thin-film SOI P-MOSFETs fabricated in SOI islands with an isolated buried polysilicon backgate

P-channel dual-gated thin-film silicon-on-insulator (DG-TFSOI) MOSFETs have been fabricated with an isolated buried polysilicon backgate in an SOI island formed by epitaxial lateral overgrowth (ELO) of silicon. This structure allows individual operation of both the top and back gates rather than the...

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Veröffentlicht in:	IEEE electron device letters 1996-11, Vol.17 (11), p.509-511
Hauptverfasser:	Denton, J.P., Neudeck, G.W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Etching Fabrication Lifting equipment MOSFET circuits Planarization Semiconductor thin films Silicon on insulator technology Substrates Threshold voltage Transistors
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