Carrier diffusion effects on quantum noise spectra in long wavelength BH lasers

We report experimental and theoretical investigations on quantum noise fluctuations in the microwave frequency range on InGaAsP/InP BH lasers (1.3 and 1.5 μm wavelengths), taking into account lateral carrier diffusion. The theoretical analysis shows that carrier diffusion effects play an important r...

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Veröffentlicht in:	IEEE J. Quant. Electron.; (United States) 1985-06, Vol.21 (6), p.700-706
Hauptverfasser:	Brosson, P., Fernier, B., Leclerc, D., Benoit, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	420300 - Engineering- Lasers- (-1989) ARSENIC COMPOUNDS ARSENIDES CHARGE CARRIERS DIFFUSION ENGINEERING Exact sciences and technology Fluctuations FREQUENCY RANGE Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS GALLIUM PHOSPHIDES GHZ RANGE INDIUM ARSENIDES INDIUM COMPOUNDS Indium phosphide INDIUM PHOSPHIDES Laser noise Laser theory LASERS Masers Microwave frequencies MICROWAVE SPECTRA NOISE Noise measurement Optics Performance evaluation PHOSPHIDES PHOSPHORUS COMPOUNDS Physics PNICTIDES Quantum mechanics Resonance SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS Semiconductor lasers laser diodes SPECTRA SUBSTRATES WAVELENGTHS
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