Carrier energy relaxation time in quantum-well lasers
Carrier energy relaxation via carrier-polar optical phonon interactions with hot phonon effects in multisubband quantum-well structures is theoretically studied by using both bulk longitudinal optical phonons and confined longitudinal optical phonons. We find that the width and the depth of quantum...
Gespeichert in:
| Veröffentlicht in: | IEEE journal of quantum electronics 1995-12, Vol.31 (12), p.2148-2158 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2158 |
|---|---|
| container_issue | 12 |
| container_start_page | 2148 |
| container_title | IEEE journal of quantum electronics |
| container_volume | 31 |
| creator | Chin-Yi Tsai Chin-Yao Tsai Yu-Hwa Lo Eastman, L.F. |
| description | Carrier energy relaxation via carrier-polar optical phonon interactions with hot phonon effects in multisubband quantum-well structures is theoretically studied by using both bulk longitudinal optical phonons and confined longitudinal optical phonons. We find that the width and the depth of quantum wells only have moderate effects on carrier energy relaxation rates. Our results also indicate that the difference of energy relaxation rates between the quantum well and the bulk material is not significant. We investigate the effects of longitudinal optical phonon lifetimes on the carrier energy relaxation rate. Neglect of the finite decay time of longitudinal optical phonons will significantly underestimate the carrier energy relaxation time; this not only contradicts the experimental results but also severely underestimates the nonlinear gain coefficient due to carrier heating. The implications of our theoretical results in designing high-speed quantum-well lasers are discussed. |
| doi_str_mv | 10.1109/3.477740 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_28238749</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>477740</ieee_id><sourcerecordid>23346205</sourcerecordid><originalsourceid>FETCH-LOGICAL-c367t-2ccf4f766cc5dad9856d8d6bc420e4c0969d1d170583c99e0ffa0a3674bb3adb3</originalsourceid><addsrcrecordid>eNqF0EtLw0AQB_BFFKxV8OwpB1Evqft-HKX4goIXPYfNZlZW8mh3E7Tf3pSUHvU0DPObP8MgdEnwghBs7tmCK6U4PkIzIoTOiSLsGM0wJjo3xKhTdJbS19hyrvEMiaWNMUDMoIX4uc0i1PbH9qFrsz40kIU22wy27Ycm_4a6zmqbIKZzdOJtneBiX-fo4-nxffmSr96eX5cPq9wxqfqcOue5V1I6JypbGS1kpStZOk4xcIeNNBWpiMJCM2cMYO8ttuMqL0tmq5LN0e2Uu47dZoDUF01IbrzDttANqVBcKC6JZqO8-VNSTZlW3PwPGeOSYjHCuwm62KUUwRfrGBobtwXBxe7VBSumV4_0ep9pk7O1j7Z1IR08NURTuku8mlgAgMN0n_ELwamExQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>23346205</pqid></control><display><type>article</type><title>Carrier energy relaxation time in quantum-well lasers</title><source>IEEE Electronic Library (IEL)</source><creator>Chin-Yi Tsai ; Chin-Yao Tsai ; Yu-Hwa Lo ; Eastman, L.F.</creator><creatorcontrib>Chin-Yi Tsai ; Chin-Yao Tsai ; Yu-Hwa Lo ; Eastman, L.F.</creatorcontrib><description>Carrier energy relaxation via carrier-polar optical phonon interactions with hot phonon effects in multisubband quantum-well structures is theoretically studied by using both bulk longitudinal optical phonons and confined longitudinal optical phonons. We find that the width and the depth of quantum wells only have moderate effects on carrier energy relaxation rates. Our results also indicate that the difference of energy relaxation rates between the quantum well and the bulk material is not significant. We investigate the effects of longitudinal optical phonon lifetimes on the carrier energy relaxation rate. Neglect of the finite decay time of longitudinal optical phonons will significantly underestimate the carrier energy relaxation time; this not only contradicts the experimental results but also severely underestimates the nonlinear gain coefficient due to carrier heating. The implications of our theoretical results in designing high-speed quantum-well lasers are discussed.</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/3.477740</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Charge carriers ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Heating ; High speed optical techniques ; Laser theory ; Lasers ; Nonlinear optics ; Numerical methods ; Optical scattering ; Optics ; Phonons ; Physics ; Quantum well lasers ; Radiative recombination ; Relaxation processes ; Semiconductor device structures ; Semiconductor lasers; laser diodes ; Semiconductor quantum wells ; Stimulated emission ; Temperature</subject><ispartof>IEEE journal of quantum electronics, 1995-12, Vol.31 (12), p.2148-2158</ispartof><rights>1996 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-2ccf4f766cc5dad9856d8d6bc420e4c0969d1d170583c99e0ffa0a3674bb3adb3</citedby><cites>FETCH-LOGICAL-c367t-2ccf4f766cc5dad9856d8d6bc420e4c0969d1d170583c99e0ffa0a3674bb3adb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/477740$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/477740$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2918225$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Chin-Yi Tsai</creatorcontrib><creatorcontrib>Chin-Yao Tsai</creatorcontrib><creatorcontrib>Yu-Hwa Lo</creatorcontrib><creatorcontrib>Eastman, L.F.</creatorcontrib><title>Carrier energy relaxation time in quantum-well lasers</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>Carrier energy relaxation via carrier-polar optical phonon interactions with hot phonon effects in multisubband quantum-well structures is theoretically studied by using both bulk longitudinal optical phonons and confined longitudinal optical phonons. We find that the width and the depth of quantum wells only have moderate effects on carrier energy relaxation rates. Our results also indicate that the difference of energy relaxation rates between the quantum well and the bulk material is not significant. We investigate the effects of longitudinal optical phonon lifetimes on the carrier energy relaxation rate. Neglect of the finite decay time of longitudinal optical phonons will significantly underestimate the carrier energy relaxation time; this not only contradicts the experimental results but also severely underestimates the nonlinear gain coefficient due to carrier heating. The implications of our theoretical results in designing high-speed quantum-well lasers are discussed.</description><subject>Charge carriers</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Heating</subject><subject>High speed optical techniques</subject><subject>Laser theory</subject><subject>Lasers</subject><subject>Nonlinear optics</subject><subject>Numerical methods</subject><subject>Optical scattering</subject><subject>Optics</subject><subject>Phonons</subject><subject>Physics</subject><subject>Quantum well lasers</subject><subject>Radiative recombination</subject><subject>Relaxation processes</subject><subject>Semiconductor device structures</subject><subject>Semiconductor lasers; laser diodes</subject><subject>Semiconductor quantum wells</subject><subject>Stimulated emission</subject><subject>Temperature</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNqF0EtLw0AQB_BFFKxV8OwpB1Evqft-HKX4goIXPYfNZlZW8mh3E7Tf3pSUHvU0DPObP8MgdEnwghBs7tmCK6U4PkIzIoTOiSLsGM0wJjo3xKhTdJbS19hyrvEMiaWNMUDMoIX4uc0i1PbH9qFrsz40kIU22wy27Ycm_4a6zmqbIKZzdOJtneBiX-fo4-nxffmSr96eX5cPq9wxqfqcOue5V1I6JypbGS1kpStZOk4xcIeNNBWpiMJCM2cMYO8ttuMqL0tmq5LN0e2Uu47dZoDUF01IbrzDttANqVBcKC6JZqO8-VNSTZlW3PwPGeOSYjHCuwm62KUUwRfrGBobtwXBxe7VBSumV4_0ep9pk7O1j7Z1IR08NURTuku8mlgAgMN0n_ELwamExQ</recordid><startdate>19951201</startdate><enddate>19951201</enddate><creator>Chin-Yi Tsai</creator><creator>Chin-Yao Tsai</creator><creator>Yu-Hwa Lo</creator><creator>Eastman, L.F.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7TC</scope></search><sort><creationdate>19951201</creationdate><title>Carrier energy relaxation time in quantum-well lasers</title><author>Chin-Yi Tsai ; Chin-Yao Tsai ; Yu-Hwa Lo ; Eastman, L.F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-2ccf4f766cc5dad9856d8d6bc420e4c0969d1d170583c99e0ffa0a3674bb3adb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Charge carriers</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Heating</topic><topic>High speed optical techniques</topic><topic>Laser theory</topic><topic>Lasers</topic><topic>Nonlinear optics</topic><topic>Numerical methods</topic><topic>Optical scattering</topic><topic>Optics</topic><topic>Phonons</topic><topic>Physics</topic><topic>Quantum well lasers</topic><topic>Radiative recombination</topic><topic>Relaxation processes</topic><topic>Semiconductor device structures</topic><topic>Semiconductor lasers; laser diodes</topic><topic>Semiconductor quantum wells</topic><topic>Stimulated emission</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chin-Yi Tsai</creatorcontrib><creatorcontrib>Chin-Yao Tsai</creatorcontrib><creatorcontrib>Yu-Hwa Lo</creatorcontrib><creatorcontrib>Eastman, L.F.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Mechanical Engineering Abstracts</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chin-Yi Tsai</au><au>Chin-Yao Tsai</au><au>Yu-Hwa Lo</au><au>Eastman, L.F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Carrier energy relaxation time in quantum-well lasers</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>1995-12-01</date><risdate>1995</risdate><volume>31</volume><issue>12</issue><spage>2148</spage><epage>2158</epage><pages>2148-2158</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>Carrier energy relaxation via carrier-polar optical phonon interactions with hot phonon effects in multisubband quantum-well structures is theoretically studied by using both bulk longitudinal optical phonons and confined longitudinal optical phonons. We find that the width and the depth of quantum wells only have moderate effects on carrier energy relaxation rates. Our results also indicate that the difference of energy relaxation rates between the quantum well and the bulk material is not significant. We investigate the effects of longitudinal optical phonon lifetimes on the carrier energy relaxation rate. Neglect of the finite decay time of longitudinal optical phonons will significantly underestimate the carrier energy relaxation time; this not only contradicts the experimental results but also severely underestimates the nonlinear gain coefficient due to carrier heating. The implications of our theoretical results in designing high-speed quantum-well lasers are discussed.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/3.477740</doi><tpages>11</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9197 |
| ispartof | IEEE journal of quantum electronics, 1995-12, Vol.31 (12), p.2148-2158 |
| issn | 0018-9197 1558-1713 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28238749 |
| source | IEEE Electronic Library (IEL) |
| subjects | Charge carriers Exact sciences and technology Fundamental areas of phenomenology (including applications) Heating High speed optical techniques Laser theory Lasers Nonlinear optics Numerical methods Optical scattering Optics Phonons Physics Quantum well lasers Radiative recombination Relaxation processes Semiconductor device structures Semiconductor lasers laser diodes Semiconductor quantum wells Stimulated emission Temperature |
| title | Carrier energy relaxation time in quantum-well lasers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T07%3A32%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Carrier%20energy%20relaxation%20time%20in%20quantum-well%20lasers&rft.jtitle=IEEE%20journal%20of%20quantum%20electronics&rft.au=Chin-Yi%20Tsai&rft.date=1995-12-01&rft.volume=31&rft.issue=12&rft.spage=2148&rft.epage=2158&rft.pages=2148-2158&rft.issn=0018-9197&rft.eissn=1558-1713&rft.coden=IEJQA7&rft_id=info:doi/10.1109/3.477740&rft_dat=%3Cproquest_RIE%3E23346205%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=23346205&rft_id=info:pmid/&rft_ieee_id=477740&rfr_iscdi=true |