Coplanar passive elements on Si substrate for frequencies up to 110 GHz

Coplanar passive elements on Si substrate for frequencies up to 110 GHz

This paper provides both modeling and design information on coplanar passive elements on a silicon substrate. The influence of substrate resistivity on coplanar waveguide (CPW) loss is discussed, and elements of a cell library for coplanar monolithic microwave integrated circuits (MMIC's) on hi...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1998-05, Vol.46 (5), p.709-712
Hauptverfasser: Heinrich, W., Gerdes, J., Schmuckle, F.J., Rheinfelder, C., Strohm, K.
Format: Artikel
Sprache:eng
Schlagworte:
Conductivity
Coplanar waveguides
Frequency
Inductors
Libraries
Microwave integrated circuits
MMICs
Monolithic integrated circuits
Silicon
Spirals
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container_end_page 712
container_issue 5
container_start_page 709
container_title IEEE transactions on microwave theory and techniques
container_volume 46
creator Heinrich, W.
Gerdes, J.
Schmuckle, F.J.
Rheinfelder, C.
Strohm, K.
description This paper provides both modeling and design information on coplanar passive elements on a silicon substrate. The influence of substrate resistivity on coplanar waveguide (CPW) loss is discussed, and elements of a cell library for coplanar monolithic microwave integrated circuits (MMIC's) on high-resistivity substrates are presented. The elements include discontinuities, junctions, and spiral inductors. The models are based on field-theoretical simulations and verified by S-parameter measurements up to 110 GHz.
doi_str_mv 10.1109/22.668686
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subjects Conductivity
Coplanar waveguides
Frequency
Inductors
Libraries
Microwave integrated circuits
MMICs
Monolithic integrated circuits
Silicon
Spirals
title Coplanar passive elements on Si substrate for frequencies up to 110 GHz
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