Low temperature deposition of crystalline AlN films by bias-enhanced Cat-CVD
In this work, crystalline AlN films were successfully synthesized on Si (100) by bias-enhanced catalytic chemical vapor deposition (Cat-CVD) at a low substrate temperature of 400 °C. The films were characterized by Fourier Transformation Infrared (FTIR) spectroscopy and X-ray diffraction (XRD). The...
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Veröffentlicht in: | Materials letters 2004-08, Vol.58 (20), p.2486-2488 |
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creator | Wang, Guoju Wang, Bo Huang, Anping Xu, Shilong Zhu, Mankang Wang, Biben Yan, Hui |
description | In this work, crystalline AlN films were successfully synthesized on Si (100) by bias-enhanced catalytic chemical vapor deposition (Cat-CVD) at a low substrate temperature of 400 °C. The films were characterized by Fourier Transformation Infrared (FTIR) spectroscopy and X-ray diffraction (XRD). The results indicate that the bias plays an important role in enhancing the crystallinity of the AlN films. Furthermore, it was observed that the crystalline AlN films with small grains of 20 nm could be obtained under the negative bias of 400 V. The effects of the bias on the growth of the crystalline films and the grain size are discussed in detail. |
doi_str_mv | 10.1016/j.matlet.2004.03.018 |
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The films were characterized by Fourier Transformation Infrared (FTIR) spectroscopy and X-ray diffraction (XRD). The results indicate that the bias plays an important role in enhancing the crystallinity of the AlN films. Furthermore, it was observed that the crystalline AlN films with small grains of 20 nm could be obtained under the negative bias of 400 V. The effects of the bias on the growth of the crystalline films and the grain size are discussed in detail.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2004.03.018</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>AlN films ; Cat-CVD ; Crystalline ; Negative bias</subject><ispartof>Materials letters, 2004-08, Vol.58 (20), p.2486-2488</ispartof><rights>2004 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-48fefd36bf8fccb84db4a262ba09f1c8eff619657ef8e52c249c504d580cc5123</citedby><cites>FETCH-LOGICAL-c316t-48fefd36bf8fccb84db4a262ba09f1c8eff619657ef8e52c249c504d580cc5123</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0167577X04001922$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65534</link.rule.ids></links><search><creatorcontrib>Wang, Guoju</creatorcontrib><creatorcontrib>Wang, Bo</creatorcontrib><creatorcontrib>Huang, Anping</creatorcontrib><creatorcontrib>Xu, Shilong</creatorcontrib><creatorcontrib>Zhu, Mankang</creatorcontrib><creatorcontrib>Wang, Biben</creatorcontrib><creatorcontrib>Yan, Hui</creatorcontrib><title>Low temperature deposition of crystalline AlN films by bias-enhanced Cat-CVD</title><title>Materials letters</title><description>In this work, crystalline AlN films were successfully synthesized on Si (100) by bias-enhanced catalytic chemical vapor deposition (Cat-CVD) at a low substrate temperature of 400 °C. The films were characterized by Fourier Transformation Infrared (FTIR) spectroscopy and X-ray diffraction (XRD). The results indicate that the bias plays an important role in enhancing the crystallinity of the AlN films. Furthermore, it was observed that the crystalline AlN films with small grains of 20 nm could be obtained under the negative bias of 400 V. The effects of the bias on the growth of the crystalline films and the grain size are discussed in detail.</description><subject>AlN films</subject><subject>Cat-CVD</subject><subject>Crystalline</subject><subject>Negative bias</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLxDAYRYMoOI7-AxdZuWtN0rRNN8JQn1B0o-IupOkXzJA-TDLK_Hs71LWruzn3wj0IXVKSUkKL623aq-ggpowQnpIsJVQcoRUVZZbwqqyO0WrGyiQvy49TdBbClsxgRfgKNc34gyP0E3gVdx5wB9MYbLTjgEeDtd-HqJyzA-CNe8bGuj7gdo9bq0ICw6caNHS4VjGp32_P0YlRLsDFX67R2_3da_2YNC8PT_WmSXRGi5hwYcB0WdEaYbRuBe9arljBWkUqQ7UAYwpaFXkJRkDONOOVzgnvckG0zinL1uhq2Z38-LWDEGVvgwbn1ADjLkgmGKMFJTPIF1D7MQQPRk7e9srvJSXyoE5u5aJOHtRJkslZ3Vy7WWown_i24GXQFg5PrQcdZTfa_wd-AQ1VeiY</recordid><startdate>200408</startdate><enddate>200408</enddate><creator>Wang, Guoju</creator><creator>Wang, Bo</creator><creator>Huang, Anping</creator><creator>Xu, Shilong</creator><creator>Zhu, Mankang</creator><creator>Wang, Biben</creator><creator>Yan, Hui</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>200408</creationdate><title>Low temperature deposition of crystalline AlN films by bias-enhanced Cat-CVD</title><author>Wang, Guoju ; Wang, Bo ; Huang, Anping ; Xu, Shilong ; Zhu, Mankang ; Wang, Biben ; Yan, Hui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-48fefd36bf8fccb84db4a262ba09f1c8eff619657ef8e52c249c504d580cc5123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>AlN films</topic><topic>Cat-CVD</topic><topic>Crystalline</topic><topic>Negative bias</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Guoju</creatorcontrib><creatorcontrib>Wang, Bo</creatorcontrib><creatorcontrib>Huang, Anping</creatorcontrib><creatorcontrib>Xu, Shilong</creatorcontrib><creatorcontrib>Zhu, Mankang</creatorcontrib><creatorcontrib>Wang, Biben</creatorcontrib><creatorcontrib>Yan, Hui</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Guoju</au><au>Wang, Bo</au><au>Huang, Anping</au><au>Xu, Shilong</au><au>Zhu, Mankang</au><au>Wang, Biben</au><au>Yan, Hui</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low temperature deposition of crystalline AlN films by bias-enhanced Cat-CVD</atitle><jtitle>Materials letters</jtitle><date>2004-08</date><risdate>2004</risdate><volume>58</volume><issue>20</issue><spage>2486</spage><epage>2488</epage><pages>2486-2488</pages><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>In this work, crystalline AlN films were successfully synthesized on Si (100) by bias-enhanced catalytic chemical vapor deposition (Cat-CVD) at a low substrate temperature of 400 °C. The films were characterized by Fourier Transformation Infrared (FTIR) spectroscopy and X-ray diffraction (XRD). The results indicate that the bias plays an important role in enhancing the crystallinity of the AlN films. Furthermore, it was observed that the crystalline AlN films with small grains of 20 nm could be obtained under the negative bias of 400 V. The effects of the bias on the growth of the crystalline films and the grain size are discussed in detail.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2004.03.018</doi><tpages>3</tpages></addata></record> |
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subjects | AlN films Cat-CVD Crystalline Negative bias |
title | Low temperature deposition of crystalline AlN films by bias-enhanced Cat-CVD |
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