Low temperature deposition of crystalline AlN films by bias-enhanced Cat-CVD

In this work, crystalline AlN films were successfully synthesized on Si (100) by bias-enhanced catalytic chemical vapor deposition (Cat-CVD) at a low substrate temperature of 400 °C. The films were characterized by Fourier Transformation Infrared (FTIR) spectroscopy and X-ray diffraction (XRD). The...

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Veröffentlicht in:Materials letters 2004-08, Vol.58 (20), p.2486-2488
Hauptverfasser: Wang, Guoju, Wang, Bo, Huang, Anping, Xu, Shilong, Zhu, Mankang, Wang, Biben, Yan, Hui
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container_end_page 2488
container_issue 20
container_start_page 2486
container_title Materials letters
container_volume 58
creator Wang, Guoju
Wang, Bo
Huang, Anping
Xu, Shilong
Zhu, Mankang
Wang, Biben
Yan, Hui
description In this work, crystalline AlN films were successfully synthesized on Si (100) by bias-enhanced catalytic chemical vapor deposition (Cat-CVD) at a low substrate temperature of 400 °C. The films were characterized by Fourier Transformation Infrared (FTIR) spectroscopy and X-ray diffraction (XRD). The results indicate that the bias plays an important role in enhancing the crystallinity of the AlN films. Furthermore, it was observed that the crystalline AlN films with small grains of 20 nm could be obtained under the negative bias of 400 V. The effects of the bias on the growth of the crystalline films and the grain size are discussed in detail.
doi_str_mv 10.1016/j.matlet.2004.03.018
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subjects AlN films
Cat-CVD
Crystalline
Negative bias
title Low temperature deposition of crystalline AlN films by bias-enhanced Cat-CVD
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