Influence of the substrate surface termination on the properties of bcc-cobalt films: GaAs(1 1 0) versus Sb/GaAs(1 1 0)

Among the wide range of metal-semiconductor interfaces, the ferromagnetic-semiconductor ones are of particular interest due to potential technological applications (i.e. realization of spintronic devices) and to the fundamental physics behind them. Reflection high energy electron diffraction (RHEED)...

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Veröffentlicht in:Applied surface science 2004-07, Vol.234 (1-4), p.468-474
Hauptverfasser: IZQUIERDO, M, DAVILA, M. E, TEODORESCU, C. M, CHROST, J, ASCOLANI, H, AVILA, J, ASENSIO, M. C
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container_end_page 474
container_issue 1-4
container_start_page 468
container_title Applied surface science
container_volume 234
creator IZQUIERDO, M
DAVILA, M. E
TEODORESCU, C. M
CHROST, J
ASCOLANI, H
AVILA, J
ASENSIO, M. C
description Among the wide range of metal-semiconductor interfaces, the ferromagnetic-semiconductor ones are of particular interest due to potential technological applications (i.e. realization of spintronic devices) and to the fundamental physics behind them. Reflection high energy electron diffraction (RHEED) and synchrotron radiation photoemission spectroscopy (SRPES) have been used to investigate the evolution of the crystallinity and interface reaction of Co thin films deposited on Sb/GaAs(1 10). The RHEED images have allowed us to qualitative observe an improvement of the Co bcc crystal structure compared to the deposition on the bare substrate. Additionally, the use of high energy resolution synchrotron radiation photoemission spectroscopy has shown that the interdiffusion process behaves differently from that observed for the non-passivated surface.
doi_str_mv 10.1016/j.apsusc.2004.05.089
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Physics
title Influence of the substrate surface termination on the properties of bcc-cobalt films: GaAs(1 1 0) versus Sb/GaAs(1 1 0)
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