HIGH-QUALITY ZnO LAYERS GROWN ON 6 H-SiC SUBSTRATES BY METALORGANIC CHEMICAL VAPOR DEPOSITION

The 6 h-SiC substrate has been studied for the growth of the ZnO layer. The X-ray diffraction measurement clearly showed the c-axis oriented growth of ZnO layers on SiC(0001) substrates. The X-ray rocking curve measurement diffracted a smaller full-width at half maximum of the ZnO layers grown on Si...

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Veröffentlicht in:	Jpn.J.Appl.Phys ,Part 1. Vol. 43, no. 3, pp. 1114-1117. 2004 Part 1. Vol. 43, no. 3, pp. 1114-1117. 2004, 2004-01, Vol.43 (3), p.1114-1117
Hauptverfasser:	Ashrafi A B, M A, Zhang, B-P, Binh, N T, Wakatsuki, K, Segawa, Y
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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