High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating
We have developed a large-area (1.2 mm ×1.2 mm) chip structure for high-power AlGaInP/mirror/Cu light-emitting diodes (LEDs) to improve both the heat dissipation and substrate light-absorbing problems encountered in conventional AlGaInP/GaAs LED samples. Especially, this LED samples can be accomplis...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2004-04, Vol.43 (4B), p.L576-L578 |
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| container_end_page | L578 |
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| container_issue | 4B |
| container_start_page | L576 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 43 |
| creator | Horng, Ray-Hua Lee, Chia-En Kung, Chung-Yuan Huang, Shao-Hua Wuu, Dong-Sing |
| description | We have developed a large-area (1.2 mm ×1.2 mm) chip structure for high-power AlGaInP/mirror/Cu light-emitting diodes (LEDs) to improve both the heat dissipation and substrate light-absorbing problems encountered in conventional AlGaInP/GaAs LED samples. Especially, this LED samples can be accomplished without additional dicing process. It was found that the peak-spectral wavelength of the AlGaInP LED with an electroplated copper substrate exhibited only about 3 nm shift at 400 mA, corresponding to a ∼30°C rising in the junction temperature. However, the junction temperature increased to 110°C easily for the AlGaInP/GaAs LED sample under a current injection of 400 mA. This indicates that the joule heating is less pronounced for the high-power AlGaInP/mirror/Cu LED sample where the metallic substrate provides a good heat sink. |
| doi_str_mv | 10.1143/JJAP.43.L576 |
| format | Article |
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Especially, this LED samples can be accomplished without additional dicing process. It was found that the peak-spectral wavelength of the AlGaInP LED with an electroplated copper substrate exhibited only about 3 nm shift at 400 mA, corresponding to a ∼30°C rising in the junction temperature. However, the junction temperature increased to 110°C easily for the AlGaInP/GaAs LED sample under a current injection of 400 mA. 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Especially, this LED samples can be accomplished without additional dicing process. It was found that the peak-spectral wavelength of the AlGaInP LED with an electroplated copper substrate exhibited only about 3 nm shift at 400 mA, corresponding to a ∼30°C rising in the junction temperature. However, the junction temperature increased to 110°C easily for the AlGaInP/GaAs LED sample under a current injection of 400 mA. 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Especially, this LED samples can be accomplished without additional dicing process. It was found that the peak-spectral wavelength of the AlGaInP LED with an electroplated copper substrate exhibited only about 3 nm shift at 400 mA, corresponding to a ∼30°C rising in the junction temperature. However, the junction temperature increased to 110°C easily for the AlGaInP/GaAs LED sample under a current injection of 400 mA. This indicates that the joule heating is less pronounced for the high-power AlGaInP/mirror/Cu LED sample where the metallic substrate provides a good heat sink.</abstract><doi>10.1143/JJAP.43.L576</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2004-04, Vol.43 (4B), p.L576-L578 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28208285 |
| source | Institute of Physics Journals |
| title | High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating |
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