Characteristics of AP bias in spin valve memory elements

Spin valve memory element biased with a pair of antiparallel (AP) coupled ferromagnetic layer was analyzed and modeled via micromagnetic simulation. In an AP structure, an external field results in a torque, causing the antiparallel magnetization (AP) axis to rotate towards the direction orthogonal...

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Veröffentlicht in:	IEEE transactions on magnetics 1998-07, Vol.34 (4), p.1063-1065
Hauptverfasser:	Zhu, J.-G., Zheng, Y.-F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Antiferromagnetic materials Applied sciences Couplings Decision support systems Electronics Exact sciences and technology Magnetic analysis Magnetic devices Magnetic flux Magnetic separation Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.) domain-motion devices, etc Magnetization Magnetostatics Micromagnetics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Spin valves
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