Characteristics of AP bias in spin valve memory elements
Spin valve memory element biased with a pair of antiparallel (AP) coupled ferromagnetic layer was analyzed and modeled via micromagnetic simulation. In an AP structure, an external field results in a torque, causing the antiparallel magnetization (AP) axis to rotate towards the direction orthogonal...
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| Veröffentlicht in: | IEEE transactions on magnetics 1998-07, Vol.34 (4), p.1063-1065 |
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| container_end_page | 1065 |
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| container_issue | 4 |
| container_start_page | 1063 |
| container_title | IEEE transactions on magnetics |
| container_volume | 34 |
| creator | Zhu, J.-G. Zheng, Y.-F. |
| description | Spin valve memory element biased with a pair of antiparallel (AP) coupled ferromagnetic layer was analyzed and modeled via micromagnetic simulation. In an AP structure, an external field results in a torque, causing the antiparallel magnetization (AP) axis to rotate towards the direction orthogonal to the field. In addition, due to its strength difference between the two AP layers, the magnetostatic field from the free layer of the spin valve can lead to irreversible AP axis flipping. This irreversible flipping can be effectively prevented by applying an AF/F exchange pinning to one of the AP layers to overcome the differential field from the free layer. |
| doi_str_mv | 10.1109/20.706357 |
| format | Article |
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In an AP structure, an external field results in a torque, causing the antiparallel magnetization (AP) axis to rotate towards the direction orthogonal to the field. In addition, due to its strength difference between the two AP layers, the magnetostatic field from the free layer of the spin valve can lead to irreversible AP axis flipping. This irreversible flipping can be effectively prevented by applying an AF/F exchange pinning to one of the AP layers to overcome the differential field from the free layer.</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/20.706357</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Antiferromagnetic materials ; Applied sciences ; Couplings ; Decision support systems ; Electronics ; Exact sciences and technology ; Magnetic analysis ; Magnetic devices ; Magnetic flux ; Magnetic separation ; Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc ; Magnetization ; Magnetostatics ; Micromagnetics ; Semiconductor electronics. Microelectronics. Optoelectronics. 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In an AP structure, an external field results in a torque, causing the antiparallel magnetization (AP) axis to rotate towards the direction orthogonal to the field. In addition, due to its strength difference between the two AP layers, the magnetostatic field from the free layer of the spin valve can lead to irreversible AP axis flipping. This irreversible flipping can be effectively prevented by applying an AF/F exchange pinning to one of the AP layers to overcome the differential field from the free layer.</description><subject>Antiferromagnetic materials</subject><subject>Applied sciences</subject><subject>Couplings</subject><subject>Decision support systems</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Magnetic analysis</subject><subject>Magnetic devices</subject><subject>Magnetic flux</subject><subject>Magnetic separation</subject><subject>Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc</subject><subject>Magnetization</subject><subject>Magnetostatics</subject><subject>Micromagnetics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Spin valves</topic><toplevel>online_resources</toplevel><creatorcontrib>Zhu, J.-G.</creatorcontrib><creatorcontrib>Zheng, Y.-F.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on magnetics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhu, J.-G.</au><au>Zheng, Y.-F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characteristics of AP bias in spin valve memory elements</atitle><jtitle>IEEE transactions on magnetics</jtitle><stitle>TMAG</stitle><date>1998-07-01</date><risdate>1998</risdate><volume>34</volume><issue>4</issue><spage>1063</spage><epage>1065</epage><pages>1063-1065</pages><issn>0018-9464</issn><eissn>1941-0069</eissn><coden>IEMGAQ</coden><abstract>Spin valve memory element biased with a pair of antiparallel (AP) coupled ferromagnetic layer was analyzed and modeled via micromagnetic simulation. In an AP structure, an external field results in a torque, causing the antiparallel magnetization (AP) axis to rotate towards the direction orthogonal to the field. In addition, due to its strength difference between the two AP layers, the magnetostatic field from the free layer of the spin valve can lead to irreversible AP axis flipping. This irreversible flipping can be effectively prevented by applying an AF/F exchange pinning to one of the AP layers to overcome the differential field from the free layer.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/20.706357</doi><tpages>3</tpages></addata></record> |
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| issn | 0018-9464 1941-0069 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Antiferromagnetic materials Applied sciences Couplings Decision support systems Electronics Exact sciences and technology Magnetic analysis Magnetic devices Magnetic flux Magnetic separation Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.) domain-motion devices, etc Magnetization Magnetostatics Micromagnetics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Spin valves |
| title | Characteristics of AP bias in spin valve memory elements |
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