Characteristics of integrated MOM junctions at DC and at optical frequencies
We present a new metal-oxide-metal device (Ni-NiO-Ni, "Edge MOM") which is stable, reproducibly fabricated, and with a 10 -10 -cm 2 tunneling area. Performing detection experiments, the device's nonlinear I-V characteristic is shown to be invariant at audio frequencies, 10.6, 3.39, an...
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| Veröffentlicht in: | IEEE journal of quantum electronics 1978-03, Vol.14 (3), p.159-169 |
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| container_title | IEEE journal of quantum electronics |
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| creator | Heiblum, M. Shihyuan Wang Whinnery, J. Gustafson, T. |
| description | We present a new metal-oxide-metal device (Ni-NiO-Ni, "Edge MOM") which is stable, reproducibly fabricated, and with a 10 -10 -cm 2 tunneling area. Performing detection experiments, the device's nonlinear I-V characteristic is shown to be invariant at audio frequencies, 10.6, 3.39, and 0.6328 μm. Similar devices with 10 -8 -cm 2 tunneling areas perform as well as the Edge MOM's in the visible and the near-infrared range, but deteriorate in performance at the 10-μm range. A dominant competing effect is a thermal-induced signal, which increases with frequency and temperature. Coupling mechanisms at the various regimes are investigated. The device can serve as a broad-band detector and mixer, and might in the future be a basic element of broad-band amplifiers and oscillators. |
| doi_str_mv | 10.1109/JQE.1978.1069765 |
| format | Article |
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Performing detection experiments, the device's nonlinear I-V characteristic is shown to be invariant at audio frequencies, 10.6, 3.39, and 0.6328 μm. Similar devices with 10 -8 -cm 2 tunneling areas perform as well as the Edge MOM's in the visible and the near-infrared range, but deteriorate in performance at the 10-μm range. A dominant competing effect is a thermal-induced signal, which increases with frequency and temperature. Coupling mechanisms at the various regimes are investigated. The device can serve as a broad-band detector and mixer, and might in the future be a basic element of broad-band amplifiers and oscillators.</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/JQE.1978.1069765</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>IEEE</publisher><subject>Detectors ; Frequency ; Integrated optics ; Message-oriented middleware ; Nonlinear optical devices ; Nonlinear optics ; Optical amplifiers ; Oscillators ; Temperature ; Tunneling</subject><ispartof>IEEE journal of quantum electronics, 1978-03, Vol.14 (3), p.159-169</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c389t-e52cb62caf4d5dace8c760f5addbf91214db78e69c3e7be77605e6748337b2de3</citedby><cites>FETCH-LOGICAL-c389t-e52cb62caf4d5dace8c760f5addbf91214db78e69c3e7be77605e6748337b2de3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1069765$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1069765$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Heiblum, M.</creatorcontrib><creatorcontrib>Shihyuan Wang</creatorcontrib><creatorcontrib>Whinnery, J.</creatorcontrib><creatorcontrib>Gustafson, T.</creatorcontrib><title>Characteristics of integrated MOM junctions at DC and at optical frequencies</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>We present a new metal-oxide-metal device (Ni-NiO-Ni, "Edge MOM") which is stable, reproducibly fabricated, and with a 10 -10 -cm 2 tunneling area. Performing detection experiments, the device's nonlinear I-V characteristic is shown to be invariant at audio frequencies, 10.6, 3.39, and 0.6328 μm. Similar devices with 10 -8 -cm 2 tunneling areas perform as well as the Edge MOM's in the visible and the near-infrared range, but deteriorate in performance at the 10-μm range. A dominant competing effect is a thermal-induced signal, which increases with frequency and temperature. Coupling mechanisms at the various regimes are investigated. The device can serve as a broad-band detector and mixer, and might in the future be a basic element of broad-band amplifiers and oscillators.</description><subject>Detectors</subject><subject>Frequency</subject><subject>Integrated optics</subject><subject>Message-oriented middleware</subject><subject>Nonlinear optical devices</subject><subject>Nonlinear optics</subject><subject>Optical amplifiers</subject><subject>Oscillators</subject><subject>Temperature</subject><subject>Tunneling</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1978</creationdate><recordtype>article</recordtype><recordid>eNqFkD1PwzAQhi0EEqWwI7F4Ykuw4zh2RhTKl1pVSDBbjn0BV2lSbHfg3-MqHdiY7k7vc3fSg9A1JTmlpL57fVvktBYyp6SqRcVP0IxyLjMqKDtFM0KozOoEnKOLEDZpLEtJZmjZfGmvTQTvQnQm4LHDbojw6XUEi1frFd7sBxPdOASsI35osB7soRt3idc97jx872EwDsIlOut0H-DqWOfo43Hx3jxny_XTS3O_zAyTdcyAF6atCqO70nKrDUgjKtJxbW3b1bSgpW2FhKo2DEQLIoUcKlFKxkRbWGBzdDvd3fkx_Q5RbV0w0Pd6gHEfVCELwimr_gcZIVISmkAygcaPIXjo1M67rfY_ihJ18KuSX3Xwq45-08rNtOIA4A8-pb-4nXcD</recordid><startdate>19780301</startdate><enddate>19780301</enddate><creator>Heiblum, M.</creator><creator>Shihyuan Wang</creator><creator>Whinnery, J.</creator><creator>Gustafson, T.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7U5</scope></search><sort><creationdate>19780301</creationdate><title>Characteristics of integrated MOM junctions at DC and at optical frequencies</title><author>Heiblum, M. ; Shihyuan Wang ; Whinnery, J. ; Gustafson, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c389t-e52cb62caf4d5dace8c760f5addbf91214db78e69c3e7be77605e6748337b2de3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1978</creationdate><topic>Detectors</topic><topic>Frequency</topic><topic>Integrated optics</topic><topic>Message-oriented middleware</topic><topic>Nonlinear optical devices</topic><topic>Nonlinear optics</topic><topic>Optical amplifiers</topic><topic>Oscillators</topic><topic>Temperature</topic><topic>Tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Heiblum, M.</creatorcontrib><creatorcontrib>Shihyuan Wang</creatorcontrib><creatorcontrib>Whinnery, J.</creatorcontrib><creatorcontrib>Gustafson, T.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Heiblum, M.</au><au>Shihyuan Wang</au><au>Whinnery, J.</au><au>Gustafson, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characteristics of integrated MOM junctions at DC and at optical frequencies</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>1978-03-01</date><risdate>1978</risdate><volume>14</volume><issue>3</issue><spage>159</spage><epage>169</epage><pages>159-169</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>We present a new metal-oxide-metal device (Ni-NiO-Ni, "Edge MOM") which is stable, reproducibly fabricated, and with a 10 -10 -cm 2 tunneling area. Performing detection experiments, the device's nonlinear I-V characteristic is shown to be invariant at audio frequencies, 10.6, 3.39, and 0.6328 μm. Similar devices with 10 -8 -cm 2 tunneling areas perform as well as the Edge MOM's in the visible and the near-infrared range, but deteriorate in performance at the 10-μm range. A dominant competing effect is a thermal-induced signal, which increases with frequency and temperature. Coupling mechanisms at the various regimes are investigated. The device can serve as a broad-band detector and mixer, and might in the future be a basic element of broad-band amplifiers and oscillators.</abstract><pub>IEEE</pub><doi>10.1109/JQE.1978.1069765</doi><tpages>11</tpages></addata></record> |
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| ispartof | IEEE journal of quantum electronics, 1978-03, Vol.14 (3), p.159-169 |
| issn | 0018-9197 1558-1713 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28205136 |
| source | IEEE/IET Electronic Library (IEL) |
| subjects | Detectors Frequency Integrated optics Message-oriented middleware Nonlinear optical devices Nonlinear optics Optical amplifiers Oscillators Temperature Tunneling |
| title | Characteristics of integrated MOM junctions at DC and at optical frequencies |
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