Characterization of highly doped n- and p-type 6H-SiC piezoresistors
Highly doped (/spl sim/2/spl times/10/sup 19/ cm/sup -3/) n- and p-type 6H-SiC strain sensing mesa resistors configured in Wheatstone bridge integrated beam transducers were investigated to characterize the piezoresistive and electrical properties. Longitudinal and transverse gauge factors, temperat...
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| Veröffentlicht in: | IEEE transactions on electron devices 1998-04, Vol.45 (4), p.785-790 |
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| container_title | IEEE transactions on electron devices |
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| creator | Okojie, R.S. Ned, A.A. Kurtz, A.D. Carr, W.N. |
| description | Highly doped (/spl sim/2/spl times/10/sup 19/ cm/sup -3/) n- and p-type 6H-SiC strain sensing mesa resistors configured in Wheatstone bridge integrated beam transducers were investigated to characterize the piezoresistive and electrical properties. Longitudinal and transverse gauge factors, temperature dependence of resistance, gauge factor (GF), and bridge output voltage were evaluated. For the n-type net doping level of 2/spl times/10/sup 19/ cm/sup -3/ the bridge gauge factor was found to be 15 at room temperature and 8 at 250/spl deg/C. For this doping level, a TCR of -0.24%//spl deg/C and -0.74%//spl deg/C at 100/spl deg/C was obtained for the n- and p-type, respectively. At 250/spl deg/C, the TCR was -0.14%//spl deg/C and -0.34%//spl deg/C, respectively. In both types, for the given doping level, impurity scattering is implied to be the dominant scattering mechanism. The results from this investigation further strengthen the viability of 6H-SiC as a piezoresistive pressure sensor for high-temperature applications. |
| doi_str_mv | 10.1109/16.662776 |
| format | Article |
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Longitudinal and transverse gauge factors, temperature dependence of resistance, gauge factor (GF), and bridge output voltage were evaluated. For the n-type net doping level of 2/spl times/10/sup 19/ cm/sup -3/ the bridge gauge factor was found to be 15 at room temperature and 8 at 250/spl deg/C. For this doping level, a TCR of -0.24%//spl deg/C and -0.74%//spl deg/C at 100/spl deg/C was obtained for the n- and p-type, respectively. At 250/spl deg/C, the TCR was -0.14%//spl deg/C and -0.34%//spl deg/C, respectively. In both types, for the given doping level, impurity scattering is implied to be the dominant scattering mechanism. The results from this investigation further strengthen the viability of 6H-SiC as a piezoresistive pressure sensor for high-temperature applications.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.662776</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bridge circuits ; Capacitive sensors ; Doping ; Electric resistance ; Piezoresistance ; Resistors ; Scattering ; Temperature dependence ; Transducers ; Voltage</subject><ispartof>IEEE transactions on electron devices, 1998-04, Vol.45 (4), p.785-790</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c343t-42a11267883300c48400e8105bb3cee3030abe79187e6f2561d849824573c1fc3</citedby><cites>FETCH-LOGICAL-c343t-42a11267883300c48400e8105bb3cee3030abe79187e6f2561d849824573c1fc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/662776$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/662776$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Okojie, R.S.</creatorcontrib><creatorcontrib>Ned, A.A.</creatorcontrib><creatorcontrib>Kurtz, A.D.</creatorcontrib><creatorcontrib>Carr, W.N.</creatorcontrib><title>Characterization of highly doped n- and p-type 6H-SiC piezoresistors</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Highly doped (/spl sim/2/spl times/10/sup 19/ cm/sup -3/) n- and p-type 6H-SiC strain sensing mesa resistors configured in Wheatstone bridge integrated beam transducers were investigated to characterize the piezoresistive and electrical properties. Longitudinal and transverse gauge factors, temperature dependence of resistance, gauge factor (GF), and bridge output voltage were evaluated. For the n-type net doping level of 2/spl times/10/sup 19/ cm/sup -3/ the bridge gauge factor was found to be 15 at room temperature and 8 at 250/spl deg/C. For this doping level, a TCR of -0.24%//spl deg/C and -0.74%//spl deg/C at 100/spl deg/C was obtained for the n- and p-type, respectively. At 250/spl deg/C, the TCR was -0.14%//spl deg/C and -0.34%//spl deg/C, respectively. In both types, for the given doping level, impurity scattering is implied to be the dominant scattering mechanism. The results from this investigation further strengthen the viability of 6H-SiC as a piezoresistive pressure sensor for high-temperature applications.</description><subject>Bridge circuits</subject><subject>Capacitive sensors</subject><subject>Doping</subject><subject>Electric resistance</subject><subject>Piezoresistance</subject><subject>Resistors</subject><subject>Scattering</subject><subject>Temperature dependence</subject><subject>Transducers</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo90DtPwzAUBWALgUQpDKxMnpAYXPyK7YwoPIpUiQGYLce5oUZpHOx0aH89RamYjq7OpzschK4ZXTBGy3umFkpxrdUJmrGi0KRUUp2iGaXMkFIYcY4ucv4-nEpKPkOP1dol50dIYe_GEHscW7wOX-tuh5s4QIN7gl3f4IGMuwGwWpL3UOEhwD4myCGPMeVLdNa6LsPVMefo8_npo1qS1dvLa_WwIl5IMRLJHWNcaWOEoNRLIykFw2hR18IDCCqoq0GXzGhQLS8Ua4wsDZeFFp61XszR7fR3SPFnC3m0m5A9dJ3rIW6z5YZTqUp-gHcT9CnmnKC1Qwobl3aWUfu3k2XKTjsd7M1kAwD8u2P5CzuzYGI</recordid><startdate>19980401</startdate><enddate>19980401</enddate><creator>Okojie, R.S.</creator><creator>Ned, A.A.</creator><creator>Kurtz, A.D.</creator><creator>Carr, W.N.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19980401</creationdate><title>Characterization of highly doped n- and p-type 6H-SiC piezoresistors</title><author>Okojie, R.S. ; Ned, A.A. ; Kurtz, A.D. ; Carr, W.N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c343t-42a11267883300c48400e8105bb3cee3030abe79187e6f2561d849824573c1fc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Bridge circuits</topic><topic>Capacitive sensors</topic><topic>Doping</topic><topic>Electric resistance</topic><topic>Piezoresistance</topic><topic>Resistors</topic><topic>Scattering</topic><topic>Temperature dependence</topic><topic>Transducers</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Okojie, R.S.</creatorcontrib><creatorcontrib>Ned, A.A.</creatorcontrib><creatorcontrib>Kurtz, A.D.</creatorcontrib><creatorcontrib>Carr, W.N.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Okojie, R.S.</au><au>Ned, A.A.</au><au>Kurtz, A.D.</au><au>Carr, W.N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of highly doped n- and p-type 6H-SiC piezoresistors</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1998-04-01</date><risdate>1998</risdate><volume>45</volume><issue>4</issue><spage>785</spage><epage>790</epage><pages>785-790</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Highly doped (/spl sim/2/spl times/10/sup 19/ cm/sup -3/) n- and p-type 6H-SiC strain sensing mesa resistors configured in Wheatstone bridge integrated beam transducers were investigated to characterize the piezoresistive and electrical properties. Longitudinal and transverse gauge factors, temperature dependence of resistance, gauge factor (GF), and bridge output voltage were evaluated. For the n-type net doping level of 2/spl times/10/sup 19/ cm/sup -3/ the bridge gauge factor was found to be 15 at room temperature and 8 at 250/spl deg/C. For this doping level, a TCR of -0.24%//spl deg/C and -0.74%//spl deg/C at 100/spl deg/C was obtained for the n- and p-type, respectively. At 250/spl deg/C, the TCR was -0.14%//spl deg/C and -0.34%//spl deg/C, respectively. In both types, for the given doping level, impurity scattering is implied to be the dominant scattering mechanism. The results from this investigation further strengthen the viability of 6H-SiC as a piezoresistive pressure sensor for high-temperature applications.</abstract><pub>IEEE</pub><doi>10.1109/16.662776</doi><tpages>6</tpages></addata></record> |
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| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Bridge circuits Capacitive sensors Doping Electric resistance Piezoresistance Resistors Scattering Temperature dependence Transducers Voltage |
| title | Characterization of highly doped n- and p-type 6H-SiC piezoresistors |
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