B‐doping mediated formation of oxygen vacancies in Bi2Sn2O7 quantum dots with a unique electronic structure for efficient and stable photoelectrocatalytic sulfamethazine degradation

This study devised a straightforward one-step approach that enabled simultaneous boron (B) doping and oxygen vacancies (OVs) production on Bi2Sn2O7 (BSO) (B-BSO-OV) quantum dots (QDs), optimizing the electrical structure of the photoelectrodes. Under light-emitting diode (LED) illumination and a low...

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Veröffentlicht in:	Journal of hazardous materials 2023-08, Vol.456, p.131696-131696, Article 131696
Hauptverfasser:	Wu, Huizhong, Hu, Zhongzheng, Liang, Ruiheng, Zhang, Xuyang, Zhou, Minghua, Arotiba, Omotayo A.
Format:	Artikel
Sprache:	eng
Schlagworte:	B-doping boron DFT electron transfer Electronic structure light light emitting diodes lighting oxygen Oxygen vacancies photocatalysis Photoelectrocatalysis photoelectrodes Quantum dots sulfamethazine
Online-Zugang:	Volltext
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