Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures
The high and low dose rate responses of bipolar transistors in a bipolar linear circuit process technology have been studied with specially designed gated lateral pnp test transistors that allow for the extraction of the oxide trapped charge (N/sub ot/) and interface trap (N/sub it/) densities. The...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2004-12, Vol.51 (6), p.3773-3780 |
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| creator | Pease, R.L. Platteter, D.G. Dunham, G.W. Seiler, J.E. Barnaby, H.J. Schrimpf, R.D. Shaneyfelt, M.R. Maher, M.C. Nowlin, R.N. |
| description | The high and low dose rate responses of bipolar transistors in a bipolar linear circuit process technology have been studied with specially designed gated lateral pnp test transistors that allow for the extraction of the oxide trapped charge (N/sub ot/) and interface trap (N/sub it/) densities. The buildup of N/sub ot/ and N/sub it/ with total dose is investigated as a function of the irradiation gate voltage at 39 rad/s and 20 mrad/s for three variations of the final passivation layer (all variations had the same oxide covering the active region of the devices). The three variations in final passivation were selected to exhibit minimal degradation at high and low dose rate (no passivation), significant degradation at high and low dose rate (p-glass/nitride) and enhanced low dose rate sensitivity (ELDRS) (p-glass only). It is shown that the increase in base current is dominated by increased N/sub it/ and the "true" low dose rate enhancement in the ELDRS parts occurs for zero and negative gate voltage, but is eliminated for large positive gate voltage and elevated temperature irradiation. Implications for ELDRS models are discussed. |
| doi_str_mv | 10.1109/TNS.2004.839258 |
| format | Article |
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The buildup of N/sub ot/ and N/sub it/ with total dose is investigated as a function of the irradiation gate voltage at 39 rad/s and 20 mrad/s for three variations of the final passivation layer (all variations had the same oxide covering the active region of the devices). The three variations in final passivation were selected to exhibit minimal degradation at high and low dose rate (no passivation), significant degradation at high and low dose rate (p-glass/nitride) and enhanced low dose rate sensitivity (ELDRS) (p-glass only). It is shown that the increase in base current is dominated by increased N/sub it/ and the "true" low dose rate enhancement in the ELDRS parts occurs for zero and negative gate voltage, but is eliminated for large positive gate voltage and elevated temperature irradiation. Implications for ELDRS models are discussed.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2004.839258</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bipolar transistor circuits ; Bipolar transistors ; Circuit testing ; Cranes ; Degradation ; Dosage ; Electric potential ; enhanced low dose rate sensitivity (ELDRS) ; Gates (circuits) ; Linear circuits ; Metastasis ; Oxides ; p-glass/nitride ; Passivation ; Semiconductor devices ; Temperature sensors ; Voltage</subject><ispartof>IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3773-3780</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c397t-7043d0f141c6282ce3a2bd36e8375e9cfe911c82809b155604bd035d4f98ca3e3</citedby><cites>FETCH-LOGICAL-c397t-7043d0f141c6282ce3a2bd36e8375e9cfe911c82809b155604bd035d4f98ca3e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1369557$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1369557$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Pease, R.L.</creatorcontrib><creatorcontrib>Platteter, D.G.</creatorcontrib><creatorcontrib>Dunham, G.W.</creatorcontrib><creatorcontrib>Seiler, J.E.</creatorcontrib><creatorcontrib>Barnaby, H.J.</creatorcontrib><creatorcontrib>Schrimpf, R.D.</creatorcontrib><creatorcontrib>Shaneyfelt, M.R.</creatorcontrib><creatorcontrib>Maher, M.C.</creatorcontrib><creatorcontrib>Nowlin, R.N.</creatorcontrib><title>Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>The high and low dose rate responses of bipolar transistors in a bipolar linear circuit process technology have been studied with specially designed gated lateral pnp test transistors that allow for the extraction of the oxide trapped charge (N/sub ot/) and interface trap (N/sub it/) densities. The buildup of N/sub ot/ and N/sub it/ with total dose is investigated as a function of the irradiation gate voltage at 39 rad/s and 20 mrad/s for three variations of the final passivation layer (all variations had the same oxide covering the active region of the devices). The three variations in final passivation were selected to exhibit minimal degradation at high and low dose rate (no passivation), significant degradation at high and low dose rate (p-glass/nitride) and enhanced low dose rate sensitivity (ELDRS) (p-glass only). It is shown that the increase in base current is dominated by increased N/sub it/ and the "true" low dose rate enhancement in the ELDRS parts occurs for zero and negative gate voltage, but is eliminated for large positive gate voltage and elevated temperature irradiation. Implications for ELDRS models are discussed.</description><subject>Bipolar transistor circuits</subject><subject>Bipolar transistors</subject><subject>Circuit testing</subject><subject>Cranes</subject><subject>Degradation</subject><subject>Dosage</subject><subject>Electric potential</subject><subject>enhanced low dose rate sensitivity (ELDRS)</subject><subject>Gates (circuits)</subject><subject>Linear circuits</subject><subject>Metastasis</subject><subject>Oxides</subject><subject>p-glass/nitride</subject><subject>Passivation</subject><subject>Semiconductor devices</subject><subject>Temperature sensors</subject><subject>Voltage</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU1rGzEQhkVpoG6Scw69iB6a5LDOaLXalY7FcZKCSU0-zkLWztYym1UqaROcX18ZFwo95DLDwPPOMDyEnDCYMgbq4uH2floCVFPJVSnkBzJhQsiCiUZ-JBMAJgtVKfWJfI5xk8dKgJiQNFubYGzC4N5Mcn6gvqM4rM1gsaW9f6Wtj0iDSUgjDtEl9-LSlp7NF5d39-cUuw5tinSMbvhFrzPW0kWuwfR0ebukKZgciskHGlMYbRoDxiNy0Jk-4vHffkger-YPs5ti8fP6x-z7orBcNalooOItdKxiti5laZGbctXyGiVvBCrboWLMylKCWuVfa6hWLXDRVp2S1nDkh-R0v_c5-N8jxqSfXLTY92ZAP0atgNWygUZl8tu7ZD4PnKk6g1__Azd-DEP-QqsSpASQVYYu9pANPsaAnX4O7smErWagd7J0lqV3svReVk582SccIv6jea2EaPgfuJ6QKw</recordid><startdate>20041201</startdate><enddate>20041201</enddate><creator>Pease, R.L.</creator><creator>Platteter, D.G.</creator><creator>Dunham, G.W.</creator><creator>Seiler, J.E.</creator><creator>Barnaby, H.J.</creator><creator>Schrimpf, R.D.</creator><creator>Shaneyfelt, M.R.</creator><creator>Maher, M.C.</creator><creator>Nowlin, R.N.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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G.W.</creatorcontrib><creatorcontrib>Seiler, J.E.</creatorcontrib><creatorcontrib>Barnaby, H.J.</creatorcontrib><creatorcontrib>Schrimpf, R.D.</creatorcontrib><creatorcontrib>Shaneyfelt, M.R.</creatorcontrib><creatorcontrib>Maher, M.C.</creatorcontrib><creatorcontrib>Nowlin, R.N.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business 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science</jtitle><stitle>TNS</stitle><date>2004-12-01</date><risdate>2004</risdate><volume>51</volume><issue>6</issue><spage>3773</spage><epage>3780</epage><pages>3773-3780</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The high and low dose rate responses of bipolar transistors in a bipolar linear circuit process technology have been studied with specially designed gated lateral pnp test transistors that allow for the extraction of the oxide trapped charge (N/sub ot/) and interface trap (N/sub it/) densities. The buildup of N/sub ot/ and N/sub it/ with total dose is investigated as a function of the irradiation gate voltage at 39 rad/s and 20 mrad/s for three variations of the final passivation layer (all variations had the same oxide covering the active region of the devices). The three variations in final passivation were selected to exhibit minimal degradation at high and low dose rate (no passivation), significant degradation at high and low dose rate (p-glass/nitride) and enhanced low dose rate sensitivity (ELDRS) (p-glass only). It is shown that the increase in base current is dominated by increased N/sub it/ and the "true" low dose rate enhancement in the ELDRS parts occurs for zero and negative gate voltage, but is eliminated for large positive gate voltage and elevated temperature irradiation. Implications for ELDRS models are discussed.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2004.839258</doi><tpages>8</tpages></addata></record> |
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| subjects | Bipolar transistor circuits Bipolar transistors Circuit testing Cranes Degradation Dosage Electric potential enhanced low dose rate sensitivity (ELDRS) Gates (circuits) Linear circuits Metastasis Oxides p-glass/nitride Passivation Semiconductor devices Temperature sensors Voltage |
| title | Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures |
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