Gate-Voltage Control of Optically- Induced Charges and Memory Effects in Polymer Field-Effect Transistors

Memory operations in polymer phototransistors have been demonstrated. A fraction of light‐induced drain current in the depletion mode of a polythiophene‐based field‐effect transistor persists after switching off the photoexcitation, and can be erased by reversing the gate voltage (Vg) (see Figure)....

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Veröffentlicht in:	Advanced materials (Weinheim) 2004-12, Vol.16 (23-24), p.2151-2155
Hauptverfasser:	Dutta, S., Narayan, K. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electro-optical materials Field-effect transistors Field‐effect transistors, organic organic Polythiophenes
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description	Memory operations in polymer phototransistors have been demonstrated. A fraction of light‐induced drain current in the depletion mode of a polythiophene‐based field‐effect transistor persists after switching off the photoexcitation, and can be erased by reversing the gate voltage (Vg) (see Figure). Write, store, read, and erase operations can be performed by applying a combination of gate voltages and incident light over a wide temperature range.
doi_str_mv	10.1002/adma.200400084
format	Article
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source	Wiley Online Library Journals Frontfile Complete
subjects	Electro-optical materials Field-effect transistors Field‐effect transistors, organic organic Polythiophenes
title	Gate-Voltage Control of Optically- Induced Charges and Memory Effects in Polymer Field-Effect Transistors
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