Observation of beta and X rays with 3-D-architecture silicon microstrip sensors
The first silicon radiation sensors based on the three-dimensional (3-D) architecture have been successfully fabricated. X-ray spectra from iron-55 and americium-241 have been recorded by reading out a 3-D architecture detector via wire bonds to a low-noise, charge-sensitive preamplifier. Using a be...
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Veröffentlicht in: | IEEE transactions on nuclear science 2001-04, Vol.48 (2), p.189-193 |
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creator | Kenney, C.J. Parker, S.I. Krieger, B. Ludewigt, B. Dubbs, T.P. Sadrozinski, H. |
description | The first silicon radiation sensors based on the three-dimensional (3-D) architecture have been successfully fabricated. X-ray spectra from iron-55 and americium-241 have been recorded by reading out a 3-D architecture detector via wire bonds to a low-noise, charge-sensitive preamplifier. Using a beta source, coincidences between a 3-D sensor and a plastic scintillator were observed. This is the first observation of ionizing radiation using a silicon sensor based on the 3-D architecture. Details of the apparatus and measurements are described. |
doi_str_mv | 10.1109/23.915364 |
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X-ray spectra from iron-55 and americium-241 have been recorded by reading out a 3-D architecture detector via wire bonds to a low-noise, charge-sensitive preamplifier. Using a beta source, coincidences between a 3-D sensor and a plastic scintillator were observed. This is the first observation of ionizing radiation using a silicon sensor based on the 3-D architecture. 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X-ray spectra from iron-55 and americium-241 have been recorded by reading out a 3-D architecture detector via wire bonds to a low-noise, charge-sensitive preamplifier. Using a beta source, coincidences between a 3-D sensor and a plastic scintillator were observed. This is the first observation of ionizing radiation using a silicon sensor based on the 3-D architecture. Details of the apparatus and measurements are described.</description><subject>Architecture</subject><subject>Beta</subject><subject>Electrodes</subject><subject>Gamma ray detectors</subject><subject>Gamma rays</subject><subject>Infrared sensors</subject><subject>Ionizing radiation</subject><subject>Ionizing radiation sensors</subject><subject>Microstrip</subject><subject>Radiation detectors</subject><subject>Semiconductor radiation detectors</subject><subject>Sensors</subject><subject>Silicon</subject><subject>Silicon radiation detectors</subject><subject>Spectra</subject><subject>Wire</subject><subject>X-rays</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0UtLAzEQAOAgCtbqwaun4EHxsDXvx1HqEwq9KHgL2d2Epmx3a5Iq_fdu2eLBgx7CEOabgZkB4ByjCcZI3xI60ZhTwQ7ACHOuCsylOgQjhLAqNNP6GJyktOy_jCM-AvN5mVz8tDl0Lew8LF220LY1fIfRbhP8CnkBaXFf2FgtQnZV3kQHU2hC1ResQhW7lGNYw-Ta1MV0Co68bZI728cxeHt8eJ0-F7P508v0blZUDJFcEMuRr3XNBKbMMyc98qK21HMivdZUKUm1p7W3ZaW4rLXgpVUUW6kx9mVFx-B66LuO3cfGpWxWIVWuaWzruk0yGjMhkFCkl1d_SqKwlkTq_6EQjMr-jcHlL7jsNrHtxzVaK0ypJLhHNwPabShF5806hpWNW4OR2Z3KEGqGU_X2YrDBOffj9slvtTCM9Q</recordid><startdate>20010401</startdate><enddate>20010401</enddate><creator>Kenney, C.J.</creator><creator>Parker, S.I.</creator><creator>Krieger, B.</creator><creator>Ludewigt, B.</creator><creator>Dubbs, T.P.</creator><creator>Sadrozinski, H.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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subjects | Architecture Beta Electrodes Gamma ray detectors Gamma rays Infrared sensors Ionizing radiation Ionizing radiation sensors Microstrip Radiation detectors Semiconductor radiation detectors Sensors Silicon Silicon radiation detectors Spectra Wire X-rays |
title | Observation of beta and X rays with 3-D-architecture silicon microstrip sensors |
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