Growth interruption to tune the emission of InAs quantum dots embedded in InGaAs matrix in the long wavelength region

We investigate the effects of combining growth interruption (GI) and InGaAs strain reducing matrix at low In content on the optical properties of Stanski–Krastanow InAs QDs grown by molecular beam epitaxy. Atomic force microscopy and Photoluminescence (PL) measurements were carried out on three seri...

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Veröffentlicht in:	Journal of crystal growth 2004-02, Vol.261 (4), p.458-465
Hauptverfasser:	Convertino, Annalisa, Cerri, Luciana, Leo, Gabriella, Viticoli, Sesto
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Surface processes A3. Molecular beam epitaxy B1. Nanomaterials Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Iii-v semiconductors Materials science Nanoscale materials and structures: fabrication and characterization Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Quantum dots
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