Growth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium alkoxide precursor
The use of materials with a higher dielectric constant than SiO2 allows an equivalent capacitance to be achieved in an insulating layer, which should provide reduced leakage currents. Thin films of gadolinium oxide, GdOx, have been deposited by liquid injection MOCVD using the volatile gadolinium al...
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| Veröffentlicht in: | Chemical vapor deposition 2004-12, Vol.10 (6), p.301-305 |
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| container_title | Chemical vapor deposition |
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| creator | ASPINALL, Helen C GASKELL, Jeffrey M YIM FUN LOO JONES, Anthony C CHALKER, Paul R POTTER, Richard J SMITH, Lesley M CRITCHLOW, Gary W |
| description | The use of materials with a higher dielectric constant than SiO2 allows an equivalent capacitance to be achieved in an insulating layer, which should provide reduced leakage currents. Thin films of gadolinium oxide, GdOx, have been deposited by liquid injection MOCVD using the volatile gadolinium alkoxide precursor, [Gd(mmp)3] (mmp=1-methoxy-2-methyl-2-propanolate, OCMe2CH2OMe). Carbon-free GdO, films were grown over a wide range of substrate temperatures (300-600 DGC) on both Si(100) and GaAs(100) substrates. X-ray diffraction (XRD) data indicated that GdO.r films grown on Si(100) were amorphous at low deposition temperatures, and crystalline with a C-type structure at growth temperatures of 450'C and above. GdOY films grown on GaAs at 450 deg C showed a strong preferred orientation, dominated by the (222) reflection. |
| doi_str_mv | 10.1002/cvde.200306310 |
| format | Article |
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Thin films of gadolinium oxide, GdOx, have been deposited by liquid injection MOCVD using the volatile gadolinium alkoxide precursor, [Gd(mmp)3] (mmp=1-methoxy-2-methyl-2-propanolate, OCMe2CH2OMe). Carbon-free GdO, films were grown over a wide range of substrate temperatures (300-600 DGC) on both Si(100) and GaAs(100) substrates. X-ray diffraction (XRD) data indicated that GdO.r films grown on Si(100) were amorphous at low deposition temperatures, and crystalline with a C-type structure at growth temperatures of 450'C and above. 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| subjects | Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics |
| title | Growth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium alkoxide precursor |
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