2-4 GHz monolithic lateral p-i-n photodetector and MESFET amplifier on GaAs-on-Si

The design, fabrication, and evaluation of broadband lateral p-i-n photodetectors monolithically integrated with multistage MESFET amplifiers on GaAs-on-Si are described. Unique features of this approach are that (a) the lateral p-i-n structure is compatible with monolithic microwave integrated circ...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 1990-09, Vol.38 (9), p.1199-1203
Hauptverfasser:	Subbarao, S.N., Bechtle, D.W., Menna, R.J., Connolly, J.C., Camisa, R.L., Narayan, S.Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Broadband amplifiers Circuits Detectors Electronics Exact sciences and technology Fabrication Frequency Gallium arsenide MESFETs MMICs Optoelectronic devices Photodetectors PIN photodiodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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