Effect of SiN treatment on GaN epilayer quality

Effect of SiN treatment on GaN epilayer quality

High‐temperature GaN films were grown at 1120 °C and 1080 °C by atmospheric pressure metalorganic vapor phase epitaxy on silicon nitride (SiN)‐treated sapphire using a GaN buffer layer grown at 600 °C. The effect of a SiN interlayer has been investigated. We have varied the silane (SiH4) flow from 4...

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Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 2004-02, Vol.201 (3), p.502-508
Hauptverfasser: Benzarti, Z., Halidou, I., Boufaden, T., El Jani, B., Juillaguet, S., Ramonda, M.
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Sprache:eng
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68.37.Ps
68.55.Jk
78.40.Fy
78.55.Cr
81.15.Gh
81.65.−b
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vapor phase epitaxy
growth from vapor phase
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container_end_page 508
container_issue 3
container_start_page 502
container_title Physica status solidi. A, Applied research
container_volume 201
creator Benzarti, Z.
Halidou, I.
Boufaden, T.
El Jani, B.
Juillaguet, S.
Ramonda, M.
description High‐temperature GaN films were grown at 1120 °C and 1080 °C by atmospheric pressure metalorganic vapor phase epitaxy on silicon nitride (SiN)‐treated sapphire using a GaN buffer layer grown at 600 °C. The effect of a SiN interlayer has been investigated. We have varied the silane (SiH4) flow from 4 to 20 sccm and the duration of SiN treatment from 60 s to 180 s. These layers have been characterized in‐situ by laser reflectometry and ex‐situ by atomic force microscopy (AFM) and low‐temperature photoluminescence. AFM revealed that GaN grown with optimized SiN treatment shows a terrace‐like structure with a reduced density of dislocations of about 5 × 108 cm−2 compared to GaN without SiN treatment. The I2 line is very intense with a 4 meV full width at half maximum. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssa.200306733
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subjects 68.37.Ps
68.55.Jk
78.40.Fy
78.55.Cr
81.15.Gh
81.65.−b
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vapor phase epitaxy
growth from vapor phase
title Effect of SiN treatment on GaN epilayer quality
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