A 4-91-GHz traveling-wave amplifier in a standard 0.12-mum SOI CMOS microprocessor technology

This paper presents five-stage and seven-stage traveling-wave amplifiers (TWA) in a 0.12-mum SOI CMOS technology. The five-stage TWA has a 4-91-GHz bandpass frequency with a gain of 5 dB. The seven-stage TWA has a 5-86-GHz bandpass frequency with a gain of 9 dB. The seven-stage TWA has a measured 18...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of solid-state circuits 2004-09, Vol.39 (9), p.1455-1461
Hauptverfasser: Plouchart, J-O, Kim, Jonghae, Zamdmer, N, Lu, Liang-Hung, Sherony, M, Tan, Y, Groves, R A, Trzcinski, R, Talbi, M, Ray, A, Wagner, L F
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1461
container_issue 9
container_start_page 1455
container_title IEEE journal of solid-state circuits
container_volume 39
creator Plouchart, J-O
Kim, Jonghae
Zamdmer, N
Lu, Liang-Hung
Sherony, M
Tan, Y
Groves, R A
Trzcinski, R
Talbi, M
Ray, A
Wagner, L F
description This paper presents five-stage and seven-stage traveling-wave amplifiers (TWA) in a 0.12-mum SOI CMOS technology. The five-stage TWA has a 4-91-GHz bandpass frequency with a gain of 5 dB. The seven-stage TWA has a 5-86-GHz bandpass frequency with a gain of 9 dB. The seven-stage TWA has a measured 18-GHz noise figure, output 1-dB compression point, and output third-order intercept point of 5.5 dB, 10 dBm, and 15.5 dBm, respectively. The power consumption is 90 and 130 mW for the five-stage and seven-stage TWA, respectively, at a voltage power supply of 2.6 V. The chips occupy an area of less than 0.82 and 1 mm for the five-stage and seven-stage TWA, respectively.
doi_str_mv 10.1109/JSSC.2004.831612
format Article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_28154653</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>28154653</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_281546533</originalsourceid><addsrcrecordid>eNqNjT1vwjAURT1QCUrZO76JzalfYlAyoqiFIlUZ0rVCVjDUyB_UL2kFvx4P_IBO996jI13GnlFkiKJ62bZtneVCyKwscIn5iE2EwJJXiY3ZI9EpTSlLnLCvFUheIV9vrtBH9aut8Uf-lwood7bmYHQE40EB9crvVdxDOsm5Gxy0zTvUH00LznQxnGPoNFGI0Ovu2wcbjpcn9nBQlvTsnlM2f3v9rDc8yT-Dpn7nDHXaWuV1GGiXl7iQy0VR_Fu8AV42SSE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28154653</pqid></control><display><type>article</type><title>A 4-91-GHz traveling-wave amplifier in a standard 0.12-mum SOI CMOS microprocessor technology</title><source>IEEE Electronic Library (IEL)</source><creator>Plouchart, J-O ; Kim, Jonghae ; Zamdmer, N ; Lu, Liang-Hung ; Sherony, M ; Tan, Y ; Groves, R A ; Trzcinski, R ; Talbi, M ; Ray, A ; Wagner, L F</creator><creatorcontrib>Plouchart, J-O ; Kim, Jonghae ; Zamdmer, N ; Lu, Liang-Hung ; Sherony, M ; Tan, Y ; Groves, R A ; Trzcinski, R ; Talbi, M ; Ray, A ; Wagner, L F</creatorcontrib><description>This paper presents five-stage and seven-stage traveling-wave amplifiers (TWA) in a 0.12-mum SOI CMOS technology. The five-stage TWA has a 4-91-GHz bandpass frequency with a gain of 5 dB. The seven-stage TWA has a 5-86-GHz bandpass frequency with a gain of 9 dB. The seven-stage TWA has a measured 18-GHz noise figure, output 1-dB compression point, and output third-order intercept point of 5.5 dB, 10 dBm, and 15.5 dBm, respectively. The power consumption is 90 and 130 mW for the five-stage and seven-stage TWA, respectively, at a voltage power supply of 2.6 V. The chips occupy an area of less than 0.82 and 1 mm for the five-stage and seven-stage TWA, respectively.</description><identifier>ISSN: 0018-9200</identifier><identifier>DOI: 10.1109/JSSC.2004.831612</identifier><language>eng</language><ispartof>IEEE journal of solid-state circuits, 2004-09, Vol.39 (9), p.1455-1461</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Plouchart, J-O</creatorcontrib><creatorcontrib>Kim, Jonghae</creatorcontrib><creatorcontrib>Zamdmer, N</creatorcontrib><creatorcontrib>Lu, Liang-Hung</creatorcontrib><creatorcontrib>Sherony, M</creatorcontrib><creatorcontrib>Tan, Y</creatorcontrib><creatorcontrib>Groves, R A</creatorcontrib><creatorcontrib>Trzcinski, R</creatorcontrib><creatorcontrib>Talbi, M</creatorcontrib><creatorcontrib>Ray, A</creatorcontrib><creatorcontrib>Wagner, L F</creatorcontrib><title>A 4-91-GHz traveling-wave amplifier in a standard 0.12-mum SOI CMOS microprocessor technology</title><title>IEEE journal of solid-state circuits</title><description>This paper presents five-stage and seven-stage traveling-wave amplifiers (TWA) in a 0.12-mum SOI CMOS technology. The five-stage TWA has a 4-91-GHz bandpass frequency with a gain of 5 dB. The seven-stage TWA has a 5-86-GHz bandpass frequency with a gain of 9 dB. The seven-stage TWA has a measured 18-GHz noise figure, output 1-dB compression point, and output third-order intercept point of 5.5 dB, 10 dBm, and 15.5 dBm, respectively. The power consumption is 90 and 130 mW for the five-stage and seven-stage TWA, respectively, at a voltage power supply of 2.6 V. The chips occupy an area of less than 0.82 and 1 mm for the five-stage and seven-stage TWA, respectively.</description><issn>0018-9200</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqNjT1vwjAURT1QCUrZO76JzalfYlAyoqiFIlUZ0rVCVjDUyB_UL2kFvx4P_IBO996jI13GnlFkiKJ62bZtneVCyKwscIn5iE2EwJJXiY3ZI9EpTSlLnLCvFUheIV9vrtBH9aut8Uf-lwood7bmYHQE40EB9crvVdxDOsm5Gxy0zTvUH00LznQxnGPoNFGI0Ovu2wcbjpcn9nBQlvTsnlM2f3v9rDc8yT-Dpn7nDHXaWuV1GGiXl7iQy0VR_Fu8AV42SSE</recordid><startdate>20040901</startdate><enddate>20040901</enddate><creator>Plouchart, J-O</creator><creator>Kim, Jonghae</creator><creator>Zamdmer, N</creator><creator>Lu, Liang-Hung</creator><creator>Sherony, M</creator><creator>Tan, Y</creator><creator>Groves, R A</creator><creator>Trzcinski, R</creator><creator>Talbi, M</creator><creator>Ray, A</creator><creator>Wagner, L F</creator><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20040901</creationdate><title>A 4-91-GHz traveling-wave amplifier in a standard 0.12-mum SOI CMOS microprocessor technology</title><author>Plouchart, J-O ; Kim, Jonghae ; Zamdmer, N ; Lu, Liang-Hung ; Sherony, M ; Tan, Y ; Groves, R A ; Trzcinski, R ; Talbi, M ; Ray, A ; Wagner, L F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_281546533</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Plouchart, J-O</creatorcontrib><creatorcontrib>Kim, Jonghae</creatorcontrib><creatorcontrib>Zamdmer, N</creatorcontrib><creatorcontrib>Lu, Liang-Hung</creatorcontrib><creatorcontrib>Sherony, M</creatorcontrib><creatorcontrib>Tan, Y</creatorcontrib><creatorcontrib>Groves, R A</creatorcontrib><creatorcontrib>Trzcinski, R</creatorcontrib><creatorcontrib>Talbi, M</creatorcontrib><creatorcontrib>Ray, A</creatorcontrib><creatorcontrib>Wagner, L F</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Plouchart, J-O</au><au>Kim, Jonghae</au><au>Zamdmer, N</au><au>Lu, Liang-Hung</au><au>Sherony, M</au><au>Tan, Y</au><au>Groves, R A</au><au>Trzcinski, R</au><au>Talbi, M</au><au>Ray, A</au><au>Wagner, L F</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 4-91-GHz traveling-wave amplifier in a standard 0.12-mum SOI CMOS microprocessor technology</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><date>2004-09-01</date><risdate>2004</risdate><volume>39</volume><issue>9</issue><spage>1455</spage><epage>1461</epage><pages>1455-1461</pages><issn>0018-9200</issn><abstract>This paper presents five-stage and seven-stage traveling-wave amplifiers (TWA) in a 0.12-mum SOI CMOS technology. The five-stage TWA has a 4-91-GHz bandpass frequency with a gain of 5 dB. The seven-stage TWA has a 5-86-GHz bandpass frequency with a gain of 9 dB. The seven-stage TWA has a measured 18-GHz noise figure, output 1-dB compression point, and output third-order intercept point of 5.5 dB, 10 dBm, and 15.5 dBm, respectively. The power consumption is 90 and 130 mW for the five-stage and seven-stage TWA, respectively, at a voltage power supply of 2.6 V. The chips occupy an area of less than 0.82 and 1 mm for the five-stage and seven-stage TWA, respectively.</abstract><doi>10.1109/JSSC.2004.831612</doi></addata></record>
fulltext fulltext
identifier ISSN: 0018-9200
ispartof IEEE journal of solid-state circuits, 2004-09, Vol.39 (9), p.1455-1461
issn 0018-9200
language eng
recordid cdi_proquest_miscellaneous_28154653
source IEEE Electronic Library (IEL)
title A 4-91-GHz traveling-wave amplifier in a standard 0.12-mum SOI CMOS microprocessor technology
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T08%3A08%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%204-91-GHz%20traveling-wave%20amplifier%20in%20a%20standard%200.12-mum%20SOI%20CMOS%20microprocessor%20technology&rft.jtitle=IEEE%20journal%20of%20solid-state%20circuits&rft.au=Plouchart,%20J-O&rft.date=2004-09-01&rft.volume=39&rft.issue=9&rft.spage=1455&rft.epage=1461&rft.pages=1455-1461&rft.issn=0018-9200&rft_id=info:doi/10.1109/JSSC.2004.831612&rft_dat=%3Cproquest%3E28154653%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28154653&rft_id=info:pmid/&rfr_iscdi=true