An adaptive impedance tuning CMOS circuit for ISM 2.4-GHz band
The difficulties encountered in matching an antenna to its optimal impedance are reduced with an adaptive 0.35-/spl mu/m CMOS circuit based on several switched shunt capacitors arranged in capacitor banks and on a few external series inductors. As high-quality inductors are difficult to obtain in CM...
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Veröffentlicht in: | IEEE transactions on circuits and systems. 1, Fundamental theory and applications Fundamental theory and applications, 2005-06, Vol.52 (6), p.1115-1124 |
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creator | Sjoblom, P. Sjoland, H. |
description | The difficulties encountered in matching an antenna to its optimal impedance are reduced with an adaptive 0.35-/spl mu/m CMOS circuit based on several switched shunt capacitors arranged in capacitor banks and on a few external series inductors. As high-quality inductors are difficult to obtain in CMOS, the inductors are placed either in an low-temperature cofired ceramic (LTCC) substrate or is a lumped component outside the core circuit. The circuits, presented here through a range of simulations, are optimized to function within the ISM 2.4-GHz band, but the general approach employed to improve matching can be used for other frequency bands as well. The circuits discussed provide a VSWR/spl les/2 match for every impedance with VSWR/spl les/5. There is a 1-dB power loss for a perfect 50 /spl Omega//spl rarr/50 /spl Omega/ transformation, a break-even point at VSWR=1.5, and a 3-dB increase in delivered power for VSWR= 4.3. |
doi_str_mv | 10.1109/TCSI.2005.849116 |
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As high-quality inductors are difficult to obtain in CMOS, the inductors are placed either in an low-temperature cofired ceramic (LTCC) substrate or is a lumped component outside the core circuit. The circuits, presented here through a range of simulations, are optimized to function within the ISM 2.4-GHz band, but the general approach employed to improve matching can be used for other frequency bands as well. The circuits discussed provide a VSWR/spl les/2 match for every impedance with VSWR/spl les/5. There is a 1-dB power loss for a perfect 50 /spl Omega//spl rarr/50 /spl Omega/ transformation, a break-even point at VSWR=1.5, and a 3-dB increase in delivered power for VSWR= 4.3.</description><identifier>ISSN: 1549-8328</identifier><identifier>ISSN: 1057-7122</identifier><identifier>EISSN: 1558-0806</identifier><identifier>DOI: 10.1109/TCSI.2005.849116</identifier><identifier>CODEN: ITCSCH</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Adaptive arrays ; Antenna tuning unit (ATU) ; bank ; capacitor ; capacitor bank ; Ceramics ; Circuit optimization ; Circuit simulation ; CMOS ; Electrical Engineering, Electronic Engineering, Information Engineering ; Elektroteknik och elektronik ; Engineering and Technology ; Frequency ; Impedance ; impedance matching ; impedance tuning ; impedance tuning unit (ITU) ; Inductors ; ISM ; reconfigurable matching ; Shunt (electrical) ; switched capacitor ; Switched capacitor circuits ; Switching circuits ; Teknik ; unit (ITU)</subject><ispartof>IEEE transactions on circuits and systems. 1, Fundamental theory and applications, 2005-06, Vol.52 (6), p.1115-1124</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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As high-quality inductors are difficult to obtain in CMOS, the inductors are placed either in an low-temperature cofired ceramic (LTCC) substrate or is a lumped component outside the core circuit. The circuits, presented here through a range of simulations, are optimized to function within the ISM 2.4-GHz band, but the general approach employed to improve matching can be used for other frequency bands as well. The circuits discussed provide a VSWR/spl les/2 match for every impedance with VSWR/spl les/5. There is a 1-dB power loss for a perfect 50 /spl Omega//spl rarr/50 /spl Omega/ transformation, a break-even point at VSWR=1.5, and a 3-dB increase in delivered power for VSWR= 4.3.</description><subject>Adaptive arrays</subject><subject>Antenna tuning unit (ATU)</subject><subject>bank</subject><subject>capacitor</subject><subject>capacitor bank</subject><subject>Ceramics</subject><subject>Circuit optimization</subject><subject>Circuit simulation</subject><subject>CMOS</subject><subject>Electrical Engineering, Electronic Engineering, Information Engineering</subject><subject>Elektroteknik och elektronik</subject><subject>Engineering and Technology</subject><subject>Frequency</subject><subject>Impedance</subject><subject>impedance matching</subject><subject>impedance tuning</subject><subject>impedance tuning unit (ITU)</subject><subject>Inductors</subject><subject>ISM</subject><subject>reconfigurable matching</subject><subject>Shunt (electrical)</subject><subject>switched capacitor</subject><subject>Switched capacitor circuits</subject><subject>Switching circuits</subject><subject>Teknik</subject><subject>unit (ITU)</subject><issn>1549-8328</issn><issn>1057-7122</issn><issn>1558-0806</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqNkc2L1EAQxYMouK7eBS-NB28Zq_or3RdhGdbdgVn2MHNvujsV6WUmielE0b_eHqIInjwUVYffe1TVq6q3CBtEsB-P28NuwwHUxkiLqJ9VV6iUqcGAfn6Zpa2N4OZl9SrnJwBuQeBV9emmZ77145y-EUvnkVrfR2Lz0qf-C9s-PB5YTFNc0sy6YWK7wwPjG1nf3f9kwfft6-pF50-Z3vzu19Xx8-1xe1_vH-9225t9HSXHudZcYBtV8D7YiCA1RMGRS-6RByFRo9SyNdFTNEaRDkKRD74xIVpLWlxX-9U2f6dxCW6c0tlPP9zgkzstY6lQymVysVPIiTqH2lsnQ9c502JwAaBptAhgDS92H1a7cRq-LpRnd0450unkexqW7LhBxRuu_gMELYGLAr7_B3walqkvL3HGiILwxhQIVihOQ85TWfLPHQjuEqK7hOguIbo1xCJ5t0oSEf3FpQQtpPgFb9GUew</recordid><startdate>20050601</startdate><enddate>20050601</enddate><creator>Sjoblom, P.</creator><creator>Sjoland, H.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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As high-quality inductors are difficult to obtain in CMOS, the inductors are placed either in an low-temperature cofired ceramic (LTCC) substrate or is a lumped component outside the core circuit. The circuits, presented here through a range of simulations, are optimized to function within the ISM 2.4-GHz band, but the general approach employed to improve matching can be used for other frequency bands as well. The circuits discussed provide a VSWR/spl les/2 match for every impedance with VSWR/spl les/5. There is a 1-dB power loss for a perfect 50 /spl Omega//spl rarr/50 /spl Omega/ transformation, a break-even point at VSWR=1.5, and a 3-dB increase in delivered power for VSWR= 4.3.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCSI.2005.849116</doi><tpages>10</tpages></addata></record> |
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subjects | Adaptive arrays Antenna tuning unit (ATU) bank capacitor capacitor bank Ceramics Circuit optimization Circuit simulation CMOS Electrical Engineering, Electronic Engineering, Information Engineering Elektroteknik och elektronik Engineering and Technology Frequency Impedance impedance matching impedance tuning impedance tuning unit (ITU) Inductors ISM reconfigurable matching Shunt (electrical) switched capacitor Switched capacitor circuits Switching circuits Teknik unit (ITU) |
title | An adaptive impedance tuning CMOS circuit for ISM 2.4-GHz band |
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