A bipolar load CMOS SRAM cell for embedded applications

This paper presents a new SRAM cell concept which offers cell scaling without requiring complicated, specialized processing technology. The proposed cell utilizes a bipolar transistor in an open-base (base is floating) configuration as a simple means of realizing a high impedance load element. The B...

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Veröffentlicht in:	IEEE electron device letters 1995-05, Vol.16 (5), p.169-171, Article 169
Hauptverfasser:	Shubat, A.S., Kazerounian, R., Irani, R., Roy, A., Rezvani, G.A., Eitan, B., Yang, C.Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bipolar transistors CMOS process CMOS technology Electronics Exact sciences and technology Impedance Integrated circuits Integrated circuits by function (including memories and processors) Leakage current Mechanical factors MOS devices Random access memory Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature Thermal loading
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