Formation of ohmic contacts to p-type ZnO

Formation of ohmic contacts to p‐type zinc oxide (ZnO) was studied. The p‐type ZnO samples were grown by metalorganic molecular‐beam epitaxy with diethylzinc, deionized water vapor and monomethylhidrazine and were annealed under oxygen gas ambient at 650 °C or 700 °C for 20 min to activate doped nit...

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Veröffentlicht in:	Physica Status Solidi (b) 2004-03, Vol.241 (3), p.635-639
Hauptverfasser:	Kurimoto, Makoto, Ashrafi, A. B. M. Almamun, Ebihara, Masato, Uesugi, Katsuhiro, Kumano, Hidekazu, Suemune, Ikuo
Format:	Artikel
Sprache:	eng
Schlagworte:	72.80.Ey 73.61.Ga Condensed matter: electronic structure, electrical, magnetic, and optical properties Contact resistance, contact potential Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics
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