Enhancement of tunnel magnetoresistance with oxidized AlHf-alloy for a tunnel barrier

We investigated the tunnel magnetoresistance (TMR) with oxidized AlHf-Alloy barrier layer. As a result, at the range of Hf content (C/sub Hf/) from 0 at.% to 70 at.% the enhancement of the tunnel magnetoresistance ratio with the AlHf-oxide barrier was observed, especially, the TMR ratio was greatly...

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Veröffentlicht in:	IEEE transactions on magnetics 2005-10, Vol.41 (10), p.2697-2699
Hauptverfasser:	Komagaki, K., Noma, K., Yamada, K., Kanai, H., Uehara, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	AlHf oxide amorphous Amorphous materials Atmosphere Cross-disciplinary physics: materials science rheology Enhanced magnetoresistance Exact sciences and technology Hafnium Hard disks Magnetic films Magnetic heads Magnetism Materials science Other topics in materials science Oxidation Physics resistance-area product (RA) tunnel barrier tunnel magnetoresistance (TMR) Tunneling magnetoresistance Zirconium
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