Enhancement of tunnel magnetoresistance with oxidized AlHf-alloy for a tunnel barrier
We investigated the tunnel magnetoresistance (TMR) with oxidized AlHf-Alloy barrier layer. As a result, at the range of Hf content (C/sub Hf/) from 0 at.% to 70 at.% the enhancement of the tunnel magnetoresistance ratio with the AlHf-oxide barrier was observed, especially, the TMR ratio was greatly...
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| Veröffentlicht in: | IEEE transactions on magnetics 2005-10, Vol.41 (10), p.2697-2699 |
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| container_title | IEEE transactions on magnetics |
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| creator | Komagaki, K. Noma, K. Yamada, K. Kanai, H. Uehara, Y. |
| description | We investigated the tunnel magnetoresistance (TMR) with oxidized AlHf-Alloy barrier layer. As a result, at the range of Hf content (C/sub Hf/) from 0 at.% to 70 at.% the enhancement of the tunnel magnetoresistance ratio with the AlHf-oxide barrier was observed, especially, the TMR ratio was greatly increased from 9.6% to 21.4% when the C/sub Hf/ increased from 0 at.% to 17 at.%. Furthermore, we found the enhanced TMR ratio with AlHf layer at thin barrier thickness less than 0.55 nm at which the TMR ratio with Al layer was not observed. And the breakdown voltage was improved with the AlHf-oxide barrier. These results are explained by the consideration that a uniformity of the oxidation in the AlHf layer composed with an amorphous or a nanocrystallized state was better than that in the Al layer composed with the large grain boundaries such as fcc-Al. |
| doi_str_mv | 10.1109/TMAG.2005.855290 |
| format | Article |
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As a result, at the range of Hf content (C/sub Hf/) from 0 at.% to 70 at.% the enhancement of the tunnel magnetoresistance ratio with the AlHf-oxide barrier was observed, especially, the TMR ratio was greatly increased from 9.6% to 21.4% when the C/sub Hf/ increased from 0 at.% to 17 at.%. Furthermore, we found the enhanced TMR ratio with AlHf layer at thin barrier thickness less than 0.55 nm at which the TMR ratio with Al layer was not observed. And the breakdown voltage was improved with the AlHf-oxide barrier. These results are explained by the consideration that a uniformity of the oxidation in the AlHf layer composed with an amorphous or a nanocrystallized state was better than that in the Al layer composed with the large grain boundaries such as fcc-Al.</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/TMAG.2005.855290</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>AlHf oxide ; amorphous ; Amorphous materials ; Atmosphere ; Cross-disciplinary physics: materials science; rheology ; Enhanced magnetoresistance ; Exact sciences and technology ; Hafnium ; Hard disks ; Magnetic films ; Magnetic heads ; Magnetism ; Materials science ; Other topics in materials science ; Oxidation ; Physics ; resistance-area product (RA) ; tunnel barrier ; tunnel magnetoresistance (TMR) ; Tunneling magnetoresistance ; Zirconium</subject><ispartof>IEEE transactions on magnetics, 2005-10, Vol.41 (10), p.2697-2699</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c335t-8b3e4983dfa3b4a6409af9dca4c4d521f144fc05bfb1c84f18c11528226bb093</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1519092$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,796,23930,23931,25140,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1519092$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17230857$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Komagaki, K.</creatorcontrib><creatorcontrib>Noma, K.</creatorcontrib><creatorcontrib>Yamada, K.</creatorcontrib><creatorcontrib>Kanai, H.</creatorcontrib><creatorcontrib>Uehara, Y.</creatorcontrib><title>Enhancement of tunnel magnetoresistance with oxidized AlHf-alloy for a tunnel barrier</title><title>IEEE transactions on magnetics</title><addtitle>TMAG</addtitle><description>We investigated the tunnel magnetoresistance (TMR) with oxidized AlHf-Alloy barrier layer. As a result, at the range of Hf content (C/sub Hf/) from 0 at.% to 70 at.% the enhancement of the tunnel magnetoresistance ratio with the AlHf-oxide barrier was observed, especially, the TMR ratio was greatly increased from 9.6% to 21.4% when the C/sub Hf/ increased from 0 at.% to 17 at.%. Furthermore, we found the enhanced TMR ratio with AlHf layer at thin barrier thickness less than 0.55 nm at which the TMR ratio with Al layer was not observed. And the breakdown voltage was improved with the AlHf-oxide barrier. These results are explained by the consideration that a uniformity of the oxidation in the AlHf layer composed with an amorphous or a nanocrystallized state was better than that in the Al layer composed with the large grain boundaries such as fcc-Al.</description><subject>AlHf oxide</subject><subject>amorphous</subject><subject>Amorphous materials</subject><subject>Atmosphere</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Enhanced magnetoresistance</subject><subject>Exact sciences and technology</subject><subject>Hafnium</subject><subject>Hard disks</subject><subject>Magnetic films</subject><subject>Magnetic heads</subject><subject>Magnetism</subject><subject>Materials science</subject><subject>Other topics in materials science</subject><subject>Oxidation</subject><subject>Physics</subject><subject>resistance-area product (RA)</subject><subject>tunnel barrier</subject><subject>tunnel magnetoresistance (TMR)</subject><subject>Tunneling magnetoresistance</subject><subject>Zirconium</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqNkc1LAzEQxYMoWKt3wcsi6G3r5GubHEupraB4qeeQzSY2st3UZIvWv95dWhE8eRqG93sPZh5ClxhGGIO8Wz5N5iMCwEeCcyLhCA2wZDgHKOQxGgBgkUtWsFN0ltJbtzKOYYBeZs1KN8aubdNmwWXttmlsna31a2PbEG3yqe317MO3qyx8-sp_2Sqb1AuX67oOu8yFmOkfX6lj9DaeoxOn62QvDnOIlvez5XSRPz7PH6aTx9xQyttclNQyKWjlNC2ZLhhI7WRlNDOs4gQ7zJgzwEtXYiOYw8JgzIkgpChLkHSIbvexmxjetza1au2TsXWtGxu2SRGBGVDyHxAKAVR04PUf8C1sY9PdoEQxZgUQNu4g2EMmhpSidWoT_VrHncKg-jJUX4bqy1D7MjrLzSFXJ6NrF7uf-vTrGxMKgvfRV3vOW2t_ZY4lSEK_AS60kjk</recordid><startdate>20051001</startdate><enddate>20051001</enddate><creator>Komagaki, K.</creator><creator>Noma, K.</creator><creator>Yamada, K.</creator><creator>Kanai, H.</creator><creator>Uehara, Y.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7QF</scope></search><sort><creationdate>20051001</creationdate><title>Enhancement of tunnel magnetoresistance with oxidized AlHf-alloy for a tunnel barrier</title><author>Komagaki, K. ; Noma, K. ; Yamada, K. ; Kanai, H. ; Uehara, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c335t-8b3e4983dfa3b4a6409af9dca4c4d521f144fc05bfb1c84f18c11528226bb093</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>AlHf oxide</topic><topic>amorphous</topic><topic>Amorphous materials</topic><topic>Atmosphere</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Enhanced magnetoresistance</topic><topic>Exact sciences and technology</topic><topic>Hafnium</topic><topic>Hard disks</topic><topic>Magnetic films</topic><topic>Magnetic heads</topic><topic>Magnetism</topic><topic>Materials science</topic><topic>Other topics in materials science</topic><topic>Oxidation</topic><topic>Physics</topic><topic>resistance-area product (RA)</topic><topic>tunnel barrier</topic><topic>tunnel magnetoresistance (TMR)</topic><topic>Tunneling magnetoresistance</topic><topic>Zirconium</topic><toplevel>online_resources</toplevel><creatorcontrib>Komagaki, K.</creatorcontrib><creatorcontrib>Noma, K.</creatorcontrib><creatorcontrib>Yamada, K.</creatorcontrib><creatorcontrib>Kanai, H.</creatorcontrib><creatorcontrib>Uehara, Y.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><jtitle>IEEE transactions on magnetics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Komagaki, K.</au><au>Noma, K.</au><au>Yamada, K.</au><au>Kanai, H.</au><au>Uehara, Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancement of tunnel magnetoresistance with oxidized AlHf-alloy for a tunnel barrier</atitle><jtitle>IEEE transactions on magnetics</jtitle><stitle>TMAG</stitle><date>2005-10-01</date><risdate>2005</risdate><volume>41</volume><issue>10</issue><spage>2697</spage><epage>2699</epage><pages>2697-2699</pages><issn>0018-9464</issn><eissn>1941-0069</eissn><coden>IEMGAQ</coden><abstract>We investigated the tunnel magnetoresistance (TMR) with oxidized AlHf-Alloy barrier layer. As a result, at the range of Hf content (C/sub Hf/) from 0 at.% to 70 at.% the enhancement of the tunnel magnetoresistance ratio with the AlHf-oxide barrier was observed, especially, the TMR ratio was greatly increased from 9.6% to 21.4% when the C/sub Hf/ increased from 0 at.% to 17 at.%. Furthermore, we found the enhanced TMR ratio with AlHf layer at thin barrier thickness less than 0.55 nm at which the TMR ratio with Al layer was not observed. And the breakdown voltage was improved with the AlHf-oxide barrier. These results are explained by the consideration that a uniformity of the oxidation in the AlHf layer composed with an amorphous or a nanocrystallized state was better than that in the Al layer composed with the large grain boundaries such as fcc-Al.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMAG.2005.855290</doi><tpages>3</tpages></addata></record> |
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| subjects | AlHf oxide amorphous Amorphous materials Atmosphere Cross-disciplinary physics: materials science rheology Enhanced magnetoresistance Exact sciences and technology Hafnium Hard disks Magnetic films Magnetic heads Magnetism Materials science Other topics in materials science Oxidation Physics resistance-area product (RA) tunnel barrier tunnel magnetoresistance (TMR) Tunneling magnetoresistance Zirconium |
| title | Enhancement of tunnel magnetoresistance with oxidized AlHf-alloy for a tunnel barrier |
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