Direct Growth of SiC Nanorods on Si Using APCVD and Single Precursors

Direct Growth of SiC Nanorods on Si Using APCVD and Single Precursors

SiC nanorod was grown by APCVD using TMS. Grown SiC nanorods had a 10 ~ 60nm diameters and lengths of several micrometers. Nanorod.s diameters and lengths were different by kind of catalysts. Nanorod.s growth scheme was divided by two regions with diameter.s variations. At first region, nanorod was...

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Veröffentlicht in:Materials science forum 2004-01, Vol.449-452, p.701-704
Hauptverfasser: Rho, Daeho, Kim, Jae Soo, Yang, Jae Woong, Byun, Dong Jin, Jhin, Jung Geun, Kim, Nari
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Kim, Jae Soo
Yang, Jae Woong
Byun, Dong Jin
Jhin, Jung Geun
Kim, Nari
description SiC nanorod was grown by APCVD using TMS. Grown SiC nanorods had a 10 ~ 60nm diameters and lengths of several micrometers. Nanorod.s diameters and lengths were different by kind of catalysts. Nanorod.s growth scheme was divided by two regions with diameter.s variations. At first region, nanorod was grown by VLS mechanism, but at the second region, nanorod growth was made by VS reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanorod.s diameters and its lengths. And the kind of catalysts and coating methods were affected growth direction and microstructures too.
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