Compositional dependence of the properties of ferroelectric Pb(ZrxTi1-x)O3 thin film capacitors deposited on single-layered PtRhOy electrode barriers
Single-layered PtRhOy thin films were investigated as electrode barriers for ferroelectric Pb(ZrxTi1-x)O3 (PZT) (x = 0.2-0.8) thin film capacitors. PtRhOy thin films were deposited directly on n+ Si wafers by reactive sputtering. PtRhOy/PZT/PtRhOy/n+ Si capacitors showed well-defined P-E hysteresis...
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Veröffentlicht in: | Ceramics international 2004, Vol.30 (7), p.1543-1546 |
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Format: | Artikel |
Sprache: | eng |
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