Compositional dependence of the properties of ferroelectric Pb(ZrxTi1-x)O3 thin film capacitors deposited on single-layered PtRhOy electrode barriers
Single-layered PtRhOy thin films were investigated as electrode barriers for ferroelectric Pb(ZrxTi1-x)O3 (PZT) (x = 0.2-0.8) thin film capacitors. PtRhOy thin films were deposited directly on n+ Si wafers by reactive sputtering. PtRhOy/PZT/PtRhOy/n+ Si capacitors showed well-defined P-E hysteresis...
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| Veröffentlicht in: | Ceramics international 2004, Vol.30 (7), p.1543-1546 |
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| creator | Lee, Kwang Bae Lee, Kyung Haeng Ju, Byeong Kwon |
| description | Single-layered PtRhOy thin films were investigated as electrode barriers for ferroelectric Pb(ZrxTi1-x)O3 (PZT) (x = 0.2-0.8) thin film capacitors. PtRhOy thin films were deposited directly on n+ Si wafers by reactive sputtering. PtRhOy/PZT/PtRhOy/n+ Si capacitors showed well-defined P-E hysteresis loops. The remanent polarisations, as well as the polarisation loss after the switching cycles, were varied with the ratio of Zr/Ti. Pb(Zr0.4Ti0.6)O3 thin film capacitor showed superior ferroelectric properties, such as P-E hysteresis characteristics and polarisation fatigue. The typical remanent polarisation and coercive field of this capacitor were 22 microC/cm2 and 87 kV/cm, respectively, and the polarisation loss was only less than 5% after 10 exp(11) switching cycles. From the measurement of the depth profile and the microstructure of the capacitor, it could be shown that single-layered PtRhOy films behaved as high quality electrode barriers for PZT thin film capacitors. 9 refs. |
| doi_str_mv | 10.1016/j.ceramint.2003.12.094 |
| format | Article |
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PtRhOy thin films were deposited directly on n+ Si wafers by reactive sputtering. PtRhOy/PZT/PtRhOy/n+ Si capacitors showed well-defined P-E hysteresis loops. The remanent polarisations, as well as the polarisation loss after the switching cycles, were varied with the ratio of Zr/Ti. Pb(Zr0.4Ti0.6)O3 thin film capacitor showed superior ferroelectric properties, such as P-E hysteresis characteristics and polarisation fatigue. The typical remanent polarisation and coercive field of this capacitor were 22 microC/cm2 and 87 kV/cm, respectively, and the polarisation loss was only less than 5% after 10 exp(11) switching cycles. From the measurement of the depth profile and the microstructure of the capacitor, it could be shown that single-layered PtRhOy films behaved as high quality electrode barriers for PZT thin film capacitors. 9 refs.</description><identifier>ISSN: 0272-8842</identifier><identifier>EISSN: 1873-3956</identifier><identifier>DOI: 10.1016/j.ceramint.2003.12.094</identifier><language>eng</language><publisher>Kidlington: Elsevier Science</publisher><subject>Applied sciences ; Capacitors. Resistors. Filters ; Electrical engineering. 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PtRhOy thin films were deposited directly on n+ Si wafers by reactive sputtering. PtRhOy/PZT/PtRhOy/n+ Si capacitors showed well-defined P-E hysteresis loops. The remanent polarisations, as well as the polarisation loss after the switching cycles, were varied with the ratio of Zr/Ti. Pb(Zr0.4Ti0.6)O3 thin film capacitor showed superior ferroelectric properties, such as P-E hysteresis characteristics and polarisation fatigue. The typical remanent polarisation and coercive field of this capacitor were 22 microC/cm2 and 87 kV/cm, respectively, and the polarisation loss was only less than 5% after 10 exp(11) switching cycles. From the measurement of the depth profile and the microstructure of the capacitor, it could be shown that single-layered PtRhOy films behaved as high quality electrode barriers for PZT thin film capacitors. 9 refs.</description><subject>Applied sciences</subject><subject>Capacitors. Resistors. Filters</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Exact sciences and technology</subject><subject>Various equipment and components</subject><issn>0272-8842</issn><issn>1873-3956</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqNkc1q3DAUhUVpodO0r1C0aUgXdvVjy_IyDG0TCEwo6aYbIctXjQZZciQFMg_S962dScg2qwuX75z7cxD6TElNCRXf9rWBpCcXSs0I4TVlNembN2hDZccr3rfiLdoQ1rFKyoa9Rx9y3pNF2Ddkg_5t4zTH7IqLQXs8wgxhhGAAR4vLLeA5xRlScZDXjoWUIngwJTmDr4ezP-nhxtHq4euOL7gL2Do_YaNnbVyJKa-Oqz2MOAacXfjrofL6AGnpXJdft7sDPvrFEfCgU3KQ8kf0zmqf4dNTPUG_f3y_2V5UV7ufl9vzq8owQUpFWyG1GcVIDOeasH6wHaUdF5rxjnAGRHA-tIbZlkoYRs6GtukFt9JSEGD4CTo9-i5X3t1DLmpy2YD3OkC8z4pJSiVpyGvA5aOPoDiCJsWcE1g1JzfpdFCUqJVRe_Ucl1rjUpSpJa5F-OVpgs5Ge5t0MC6_qAVd9ugk_w_yAJsK</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Lee, Kwang Bae</creator><creator>Lee, Kyung Haeng</creator><creator>Ju, Byeong Kwon</creator><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>JG9</scope></search><sort><creationdate>2004</creationdate><title>Compositional dependence of the properties of ferroelectric Pb(ZrxTi1-x)O3 thin film capacitors deposited on single-layered PtRhOy electrode barriers</title><author>Lee, Kwang Bae ; Lee, Kyung Haeng ; Ju, Byeong Kwon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c260t-1568acd6d0c33a029bf711736a237032e0633b5c2f518ebd32b54963f8f1e6ec3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Applied sciences</topic><topic>Capacitors. Resistors. Filters</topic><topic>Electrical engineering. Electrical power engineering</topic><topic>Exact sciences and technology</topic><topic>Various equipment and components</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Kwang Bae</creatorcontrib><creatorcontrib>Lee, Kyung Haeng</creatorcontrib><creatorcontrib>Ju, Byeong Kwon</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>Materials Research Database</collection><jtitle>Ceramics international</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Kwang Bae</au><au>Lee, Kyung Haeng</au><au>Ju, Byeong Kwon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Compositional dependence of the properties of ferroelectric Pb(ZrxTi1-x)O3 thin film capacitors deposited on single-layered PtRhOy electrode barriers</atitle><jtitle>Ceramics international</jtitle><date>2004</date><risdate>2004</risdate><volume>30</volume><issue>7</issue><spage>1543</spage><epage>1546</epage><pages>1543-1546</pages><issn>0272-8842</issn><eissn>1873-3956</eissn><abstract>Single-layered PtRhOy thin films were investigated as electrode barriers for ferroelectric Pb(ZrxTi1-x)O3 (PZT) (x = 0.2-0.8) thin film capacitors. PtRhOy thin films were deposited directly on n+ Si wafers by reactive sputtering. PtRhOy/PZT/PtRhOy/n+ Si capacitors showed well-defined P-E hysteresis loops. The remanent polarisations, as well as the polarisation loss after the switching cycles, were varied with the ratio of Zr/Ti. Pb(Zr0.4Ti0.6)O3 thin film capacitor showed superior ferroelectric properties, such as P-E hysteresis characteristics and polarisation fatigue. The typical remanent polarisation and coercive field of this capacitor were 22 microC/cm2 and 87 kV/cm, respectively, and the polarisation loss was only less than 5% after 10 exp(11) switching cycles. From the measurement of the depth profile and the microstructure of the capacitor, it could be shown that single-layered PtRhOy films behaved as high quality electrode barriers for PZT thin film capacitors. 9 refs.</abstract><cop>Kidlington</cop><pub>Elsevier Science</pub><doi>10.1016/j.ceramint.2003.12.094</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Capacitors. Resistors. Filters Electrical engineering. Electrical power engineering Exact sciences and technology Various equipment and components |
| title | Compositional dependence of the properties of ferroelectric Pb(ZrxTi1-x)O3 thin film capacitors deposited on single-layered PtRhOy electrode barriers |
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