High-performance Ge/Si electro-absorption optical modulator up to 85°C and its highly efficient photodetector operation

We studied a high-speed Ge/Si electro-absorption optical modulator (EAM) evanescently coupled with a Si waveguide of a lateral p-n junction for a high-bandwidth optical interconnect over a wide range of temperatures from 25 °C to 85 °C. We demonstrated 56 Gbps high-speed operation at temperatures up...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Optics express 2023-03, Vol.31 (6), p.10732-10743
Hauptverfasser:	Fujikata, Junichi, Noguchi, Masataka, Katamawari, Riku, Inaba, Kyosuke, Ono, Hideki, Shimura, Daisuke, Onawa, Yosuke, Yaegashi, Hiroki, Ishikawa, Yasuhiko
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!