High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning
Sliding ferroelectricity associated with interlayer translation is an excellent candidate for ferroelectric device miniaturization. However, the weak polarization gives rise to the poor performance of sliding ferroelectric transistors with a low on/off ratio and a narrow memory window, which restric...
Gespeichert in:
Veröffentlicht in: | Nano letters 2023-05, Vol.23 (10), p.4595-4601 |
---|---|
Hauptverfasser: | , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 4601 |
---|---|
container_issue | 10 |
container_start_page | 4595 |
container_title | Nano letters |
container_volume | 23 |
creator | Bian, Renji Cao, Guiming Pan, Er Liu, Qing Li, Zefen Liang, Lei Wu, Qingyun Ang, Lay Kee Li, Wenwu Zhao, Xiaoxu Liu, Fucai |
description | Sliding ferroelectricity associated with interlayer translation is an excellent candidate for ferroelectric device miniaturization. However, the weak polarization gives rise to the poor performance of sliding ferroelectric transistors with a low on/off ratio and a narrow memory window, which restricts its practical application. To address the issue, we propose a facile strategy by regulating the Schottky barrier in sliding ferroelectric semiconductor transistors based on γ-InSe, in which a high performance with a large on/off ratio (106) and a wide memory window (4.5 V) was ultimately acquired. Additionally, the memory window of the device can be further modulated by electrostatic doping or light excitation. These results open up new ways for designing novel ferroelectric devices based on emerging sliding ferroelectricity. |
doi_str_mv | 10.1021/acs.nanolett.3c01053 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2811566128</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2811566128</sourcerecordid><originalsourceid>FETCH-LOGICAL-a348t-ec9ca382bfa23ff18b82303bfb9c407b19da2d20a72e9065ecb330dcd052d5cc3</originalsourceid><addsrcrecordid>eNp9kE1PwzAMhiMEYmPwDxDqkUuHkzRdeoSJMaRJIDbOVZq6W0aXjKQ97N_TaR9HTras57Xlh5B7CkMKjD4pHYZWWVdj0wy5BgqCX5A-FRziNMvY5bmXSY_chLAGgIwLuCY9PqIikansk6-pWa7iT_SV8xtlNUbz2pTGLqMJeu-wRt14o6OFVzaY0DgfvaiAZeRsNNcr1zQ_u27ivUEfLVrbJW_JVaXqgHfHOiDfk9fFeBrPPt7ex8-zWPFENjHqTCsuWVEpxquKykIyDryoikwnMCpoVipWMlAjhhmkAnXBOZS6BMFKoTUfkMfD3q13vy2GJt-YoLGulUXXhpxJSkWaUiY7NDmg2rsQPFb51puN8rucQr63mXc285PN_Giziz0cL7TFBstz6KSvA-AA7ONr13rbPfz_zj_0vIW7</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2811566128</pqid></control><display><type>article</type><title>High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning</title><source>American Chemical Society</source><creator>Bian, Renji ; Cao, Guiming ; Pan, Er ; Liu, Qing ; Li, Zefen ; Liang, Lei ; Wu, Qingyun ; Ang, Lay Kee ; Li, Wenwu ; Zhao, Xiaoxu ; Liu, Fucai</creator><creatorcontrib>Bian, Renji ; Cao, Guiming ; Pan, Er ; Liu, Qing ; Li, Zefen ; Liang, Lei ; Wu, Qingyun ; Ang, Lay Kee ; Li, Wenwu ; Zhao, Xiaoxu ; Liu, Fucai</creatorcontrib><description>Sliding ferroelectricity associated with interlayer translation is an excellent candidate for ferroelectric device miniaturization. However, the weak polarization gives rise to the poor performance of sliding ferroelectric transistors with a low on/off ratio and a narrow memory window, which restricts its practical application. To address the issue, we propose a facile strategy by regulating the Schottky barrier in sliding ferroelectric semiconductor transistors based on γ-InSe, in which a high performance with a large on/off ratio (106) and a wide memory window (4.5 V) was ultimately acquired. Additionally, the memory window of the device can be further modulated by electrostatic doping or light excitation. These results open up new ways for designing novel ferroelectric devices based on emerging sliding ferroelectricity.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/acs.nanolett.3c01053</identifier><identifier>PMID: 37154868</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><ispartof>Nano letters, 2023-05, Vol.23 (10), p.4595-4601</ispartof><rights>2023 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a348t-ec9ca382bfa23ff18b82303bfb9c407b19da2d20a72e9065ecb330dcd052d5cc3</citedby><cites>FETCH-LOGICAL-a348t-ec9ca382bfa23ff18b82303bfb9c407b19da2d20a72e9065ecb330dcd052d5cc3</cites><orcidid>0000-0003-2811-1194 ; 0000-0002-9307-1566 ; 0000-0001-9746-3770 ; 0000-0003-1275-0573</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c01053$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acs.nanolett.3c01053$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/37154868$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Bian, Renji</creatorcontrib><creatorcontrib>Cao, Guiming</creatorcontrib><creatorcontrib>Pan, Er</creatorcontrib><creatorcontrib>Liu, Qing</creatorcontrib><creatorcontrib>Li, Zefen</creatorcontrib><creatorcontrib>Liang, Lei</creatorcontrib><creatorcontrib>Wu, Qingyun</creatorcontrib><creatorcontrib>Ang, Lay Kee</creatorcontrib><creatorcontrib>Li, Wenwu</creatorcontrib><creatorcontrib>Zhao, Xiaoxu</creatorcontrib><creatorcontrib>Liu, Fucai</creatorcontrib><title>High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>Sliding ferroelectricity associated with interlayer translation is an excellent candidate for ferroelectric device miniaturization. However, the weak polarization gives rise to the poor performance of sliding ferroelectric transistors with a low on/off ratio and a narrow memory window, which restricts its practical application. To address the issue, we propose a facile strategy by regulating the Schottky barrier in sliding ferroelectric semiconductor transistors based on γ-InSe, in which a high performance with a large on/off ratio (106) and a wide memory window (4.5 V) was ultimately acquired. Additionally, the memory window of the device can be further modulated by electrostatic doping or light excitation. These results open up new ways for designing novel ferroelectric devices based on emerging sliding ferroelectricity.</description><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kE1PwzAMhiMEYmPwDxDqkUuHkzRdeoSJMaRJIDbOVZq6W0aXjKQ97N_TaR9HTras57Xlh5B7CkMKjD4pHYZWWVdj0wy5BgqCX5A-FRziNMvY5bmXSY_chLAGgIwLuCY9PqIikansk6-pWa7iT_SV8xtlNUbz2pTGLqMJeu-wRt14o6OFVzaY0DgfvaiAZeRsNNcr1zQ_u27ivUEfLVrbJW_JVaXqgHfHOiDfk9fFeBrPPt7ex8-zWPFENjHqTCsuWVEpxquKykIyDryoikwnMCpoVipWMlAjhhmkAnXBOZS6BMFKoTUfkMfD3q13vy2GJt-YoLGulUXXhpxJSkWaUiY7NDmg2rsQPFb51puN8rucQr63mXc285PN_Giziz0cL7TFBstz6KSvA-AA7ONr13rbPfz_zj_0vIW7</recordid><startdate>20230524</startdate><enddate>20230524</enddate><creator>Bian, Renji</creator><creator>Cao, Guiming</creator><creator>Pan, Er</creator><creator>Liu, Qing</creator><creator>Li, Zefen</creator><creator>Liang, Lei</creator><creator>Wu, Qingyun</creator><creator>Ang, Lay Kee</creator><creator>Li, Wenwu</creator><creator>Zhao, Xiaoxu</creator><creator>Liu, Fucai</creator><general>American Chemical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0003-2811-1194</orcidid><orcidid>https://orcid.org/0000-0002-9307-1566</orcidid><orcidid>https://orcid.org/0000-0001-9746-3770</orcidid><orcidid>https://orcid.org/0000-0003-1275-0573</orcidid></search><sort><creationdate>20230524</creationdate><title>High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning</title><author>Bian, Renji ; Cao, Guiming ; Pan, Er ; Liu, Qing ; Li, Zefen ; Liang, Lei ; Wu, Qingyun ; Ang, Lay Kee ; Li, Wenwu ; Zhao, Xiaoxu ; Liu, Fucai</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a348t-ec9ca382bfa23ff18b82303bfb9c407b19da2d20a72e9065ecb330dcd052d5cc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bian, Renji</creatorcontrib><creatorcontrib>Cao, Guiming</creatorcontrib><creatorcontrib>Pan, Er</creatorcontrib><creatorcontrib>Liu, Qing</creatorcontrib><creatorcontrib>Li, Zefen</creatorcontrib><creatorcontrib>Liang, Lei</creatorcontrib><creatorcontrib>Wu, Qingyun</creatorcontrib><creatorcontrib>Ang, Lay Kee</creatorcontrib><creatorcontrib>Li, Wenwu</creatorcontrib><creatorcontrib>Zhao, Xiaoxu</creatorcontrib><creatorcontrib>Liu, Fucai</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bian, Renji</au><au>Cao, Guiming</au><au>Pan, Er</au><au>Liu, Qing</au><au>Li, Zefen</au><au>Liang, Lei</au><au>Wu, Qingyun</au><au>Ang, Lay Kee</au><au>Li, Wenwu</au><au>Zhao, Xiaoxu</au><au>Liu, Fucai</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2023-05-24</date><risdate>2023</risdate><volume>23</volume><issue>10</issue><spage>4595</spage><epage>4601</epage><pages>4595-4601</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>Sliding ferroelectricity associated with interlayer translation is an excellent candidate for ferroelectric device miniaturization. However, the weak polarization gives rise to the poor performance of sliding ferroelectric transistors with a low on/off ratio and a narrow memory window, which restricts its practical application. To address the issue, we propose a facile strategy by regulating the Schottky barrier in sliding ferroelectric semiconductor transistors based on γ-InSe, in which a high performance with a large on/off ratio (106) and a wide memory window (4.5 V) was ultimately acquired. Additionally, the memory window of the device can be further modulated by electrostatic doping or light excitation. These results open up new ways for designing novel ferroelectric devices based on emerging sliding ferroelectricity.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>37154868</pmid><doi>10.1021/acs.nanolett.3c01053</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0003-2811-1194</orcidid><orcidid>https://orcid.org/0000-0002-9307-1566</orcidid><orcidid>https://orcid.org/0000-0001-9746-3770</orcidid><orcidid>https://orcid.org/0000-0003-1275-0573</orcidid></addata></record> |
fulltext | fulltext |
identifier | ISSN: 1530-6984 |
ispartof | Nano letters, 2023-05, Vol.23 (10), p.4595-4601 |
issn | 1530-6984 1530-6992 |
language | eng |
recordid | cdi_proquest_miscellaneous_2811566128 |
source | American Chemical Society |
title | High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T13%3A40%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-Performance%20Sliding%20Ferroelectric%20Transistor%20Based%20on%20Schottky%20Barrier%20Tuning&rft.jtitle=Nano%20letters&rft.au=Bian,%20Renji&rft.date=2023-05-24&rft.volume=23&rft.issue=10&rft.spage=4595&rft.epage=4601&rft.pages=4595-4601&rft.issn=1530-6984&rft.eissn=1530-6992&rft_id=info:doi/10.1021/acs.nanolett.3c01053&rft_dat=%3Cproquest_cross%3E2811566128%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2811566128&rft_id=info:pmid/37154868&rfr_iscdi=true |