Threading dislocation removal from the near-surface region of epitaxial cadmium telluride on silicon by lithographic patterning of the substrate

(211) oriented silicon substrates were patterned and etched to give mesas of various sizes and shapes. Cadmium telluride epitaxial layers were deposited on the patterned substrates by molecular beam epitaxy (MBE). Dislocation termini in the epilayer were found to be concentrated in the trenches that...

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Veröffentlicht in:	Journal of electronic materials 2005-09, Vol.34 (9), p.1242-1248
Hauptverfasser:	MOLSTAD, J. C, BENSON, J. D, MARKUNAS, J. K, VARESI, J. B, BOYD, P. R, DINAN, J. H
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Crystallography Electronics Etching Exact sciences and technology Materials Mercury cadmium telluride Molecular beam epitaxy Silicon Threading dislocations
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