Shift‐Current Photovoltaics Based on a Non‐Centrosymmetric Phase in In‐Plane Ferroelectric SnS
The shift‐current photovoltaics of group‐IV monochalcogenides has been predicted to be comparable to those of state‐of‐the‐art Si‐based solar cells. However, its exploration has been prevented from the centrosymmetric layer stacking in the thermodynamically stable bulk crystal. Herein, the non‐centr...
Gespeichert in:
| Veröffentlicht in: | Advanced materials (Weinheim) 2023-07, Vol.35 (29), p.e2301172-n/a |
|---|---|
| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | n/a |
|---|---|
| container_issue | 29 |
| container_start_page | e2301172 |
| container_title | Advanced materials (Weinheim) |
| container_volume | 35 |
| creator | Chang, Yih‐Ren Nanae, Ryo Kitamura, Satsuki Nishimura, Tomonori Wang, Haonan Xiang, Yubei Shinokita, Keisuke Matsuda, Kazunari Taniguchi, Takashi Watanabe, Kenji Nagashio, Kosuke |
| description | The shift‐current photovoltaics of group‐IV monochalcogenides has been predicted to be comparable to those of state‐of‐the‐art Si‐based solar cells. However, its exploration has been prevented from the centrosymmetric layer stacking in the thermodynamically stable bulk crystal. Herein, the non‐centrosymmetric layer stacking of tin sulfide (SnS) is stabilized in the bottom regions of SnS crystals grown on a van der Waals substrate by physical vapor deposition and the shift current of SnS, by combining the polarization angle dependence and circular photogalvanic effect, is demonstrated. Furthermore, 180° ferroelectric domains in SnS are verified through both piezoresponse force microscopy and shift‐current mapping techniques. Based on these results, an atomic model of the ferroelectric domain boundary is proposed. The direct observation of shift current and ferroelectric domains reported herein paves a new path for future studies on shift‐current photovoltaics.
A non‐centrosymmetric layer stacking phase of 2D tin sulfide (SnS) is successfully achieved on van der Waals substrates and the shift current in SnS is demonstrated. Following the PFM observation that reveals the existence of ferroelectric domains, an atomic model of the ferroelectric domain boundary is proposed. |
| doi_str_mv | 10.1002/adma.202301172 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2810921036</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2839656317</sourcerecordid><originalsourceid>FETCH-LOGICAL-c4132-74f9671d7be6a3982228ea3b030e0ada456e31d479eb4280536d0a4b92d4d38d3</originalsourceid><addsrcrecordid>eNqF0L9u2zAQBnAiSBE7adeMAYEsXeQe_4gSR8eN2wBpEsDtLFDiGZEhiS4ptfCWR8gz9klK1akLZOl0A3_8cPcRcs5gxgD4B2NbM-PABTCW8SMyZSlniQSdHpMpaJEmWsl8Qk5D2ACAVqBOyERkTOYpz6fErh7rdf_r6XkxeI9dTx8eXe9-uKY3dRXolQloqeuooXeuG1k03oVd22Lv6yryKGjd0Zvx9aExHdIleu-wweqPWHWrt-TN2jQB373MM_Jtef118Tm5vf90s5jfJpVkgieZXGuVMZuVqIzQOec8RyNKEIBgrJGpQsGszDSWkueQCmXByFJzK63IrTgj7_e5W---Dxj6oq1Dhc24lRtCwXMGmjMQKtLLV3TjBt_F7aISWqVKsCyq2V5V8ebgcV1sfd0avysYFGP_xdh_ceg_frh4iR3KFu2B_y08Ar0HP-sGd_-JK-Yfv8z_hf8G8MGTTQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2839656317</pqid></control><display><type>article</type><title>Shift‐Current Photovoltaics Based on a Non‐Centrosymmetric Phase in In‐Plane Ferroelectric SnS</title><source>Wiley Online Library All Journals</source><creator>Chang, Yih‐Ren ; Nanae, Ryo ; Kitamura, Satsuki ; Nishimura, Tomonori ; Wang, Haonan ; Xiang, Yubei ; Shinokita, Keisuke ; Matsuda, Kazunari ; Taniguchi, Takashi ; Watanabe, Kenji ; Nagashio, Kosuke</creator><creatorcontrib>Chang, Yih‐Ren ; Nanae, Ryo ; Kitamura, Satsuki ; Nishimura, Tomonori ; Wang, Haonan ; Xiang, Yubei ; Shinokita, Keisuke ; Matsuda, Kazunari ; Taniguchi, Takashi ; Watanabe, Kenji ; Nagashio, Kosuke</creatorcontrib><description>The shift‐current photovoltaics of group‐IV monochalcogenides has been predicted to be comparable to those of state‐of‐the‐art Si‐based solar cells. However, its exploration has been prevented from the centrosymmetric layer stacking in the thermodynamically stable bulk crystal. Herein, the non‐centrosymmetric layer stacking of tin sulfide (SnS) is stabilized in the bottom regions of SnS crystals grown on a van der Waals substrate by physical vapor deposition and the shift current of SnS, by combining the polarization angle dependence and circular photogalvanic effect, is demonstrated. Furthermore, 180° ferroelectric domains in SnS are verified through both piezoresponse force microscopy and shift‐current mapping techniques. Based on these results, an atomic model of the ferroelectric domain boundary is proposed. The direct observation of shift current and ferroelectric domains reported herein paves a new path for future studies on shift‐current photovoltaics.
A non‐centrosymmetric layer stacking phase of 2D tin sulfide (SnS) is successfully achieved on van der Waals substrates and the shift current in SnS is demonstrated. Following the PFM observation that reveals the existence of ferroelectric domains, an atomic model of the ferroelectric domain boundary is proposed.</description><identifier>ISSN: 0935-9648</identifier><identifier>EISSN: 1521-4095</identifier><identifier>DOI: 10.1002/adma.202301172</identifier><identifier>PMID: 37148528</identifier><language>eng</language><publisher>Germany: Wiley Subscription Services, Inc</publisher><subject>2D materials ; Crystal growth ; Ferroelectric domains ; Ferroelectric materials ; Ferroelectricity ; non‐centrosymmetry ; Photovoltaic cells ; Physical vapor deposition ; shift currents ; Solar cells ; Stacking ; Substrates ; tin sulfide</subject><ispartof>Advanced materials (Weinheim), 2023-07, Vol.35 (29), p.e2301172-n/a</ispartof><rights>2023 The Authors. Advanced Materials published by Wiley‐VCH GmbH</rights><rights>2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.</rights><rights>2023. This article is published under http://creativecommons.org/licenses/by-nc/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4132-74f9671d7be6a3982228ea3b030e0ada456e31d479eb4280536d0a4b92d4d38d3</citedby><cites>FETCH-LOGICAL-c4132-74f9671d7be6a3982228ea3b030e0ada456e31d479eb4280536d0a4b92d4d38d3</cites><orcidid>0000-0003-1181-8644</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fadma.202301172$$EPDF$$P50$$Gwiley$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fadma.202301172$$EHTML$$P50$$Gwiley$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,1417,27923,27924,45573,45574</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/37148528$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Chang, Yih‐Ren</creatorcontrib><creatorcontrib>Nanae, Ryo</creatorcontrib><creatorcontrib>Kitamura, Satsuki</creatorcontrib><creatorcontrib>Nishimura, Tomonori</creatorcontrib><creatorcontrib>Wang, Haonan</creatorcontrib><creatorcontrib>Xiang, Yubei</creatorcontrib><creatorcontrib>Shinokita, Keisuke</creatorcontrib><creatorcontrib>Matsuda, Kazunari</creatorcontrib><creatorcontrib>Taniguchi, Takashi</creatorcontrib><creatorcontrib>Watanabe, Kenji</creatorcontrib><creatorcontrib>Nagashio, Kosuke</creatorcontrib><title>Shift‐Current Photovoltaics Based on a Non‐Centrosymmetric Phase in In‐Plane Ferroelectric SnS</title><title>Advanced materials (Weinheim)</title><addtitle>Adv Mater</addtitle><description>The shift‐current photovoltaics of group‐IV monochalcogenides has been predicted to be comparable to those of state‐of‐the‐art Si‐based solar cells. However, its exploration has been prevented from the centrosymmetric layer stacking in the thermodynamically stable bulk crystal. Herein, the non‐centrosymmetric layer stacking of tin sulfide (SnS) is stabilized in the bottom regions of SnS crystals grown on a van der Waals substrate by physical vapor deposition and the shift current of SnS, by combining the polarization angle dependence and circular photogalvanic effect, is demonstrated. Furthermore, 180° ferroelectric domains in SnS are verified through both piezoresponse force microscopy and shift‐current mapping techniques. Based on these results, an atomic model of the ferroelectric domain boundary is proposed. The direct observation of shift current and ferroelectric domains reported herein paves a new path for future studies on shift‐current photovoltaics.
A non‐centrosymmetric layer stacking phase of 2D tin sulfide (SnS) is successfully achieved on van der Waals substrates and the shift current in SnS is demonstrated. Following the PFM observation that reveals the existence of ferroelectric domains, an atomic model of the ferroelectric domain boundary is proposed.</description><subject>2D materials</subject><subject>Crystal growth</subject><subject>Ferroelectric domains</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>non‐centrosymmetry</subject><subject>Photovoltaic cells</subject><subject>Physical vapor deposition</subject><subject>shift currents</subject><subject>Solar cells</subject><subject>Stacking</subject><subject>Substrates</subject><subject>tin sulfide</subject><issn>0935-9648</issn><issn>1521-4095</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>24P</sourceid><sourceid>WIN</sourceid><recordid>eNqF0L9u2zAQBnAiSBE7adeMAYEsXeQe_4gSR8eN2wBpEsDtLFDiGZEhiS4ptfCWR8gz9klK1akLZOl0A3_8cPcRcs5gxgD4B2NbM-PABTCW8SMyZSlniQSdHpMpaJEmWsl8Qk5D2ACAVqBOyERkTOYpz6fErh7rdf_r6XkxeI9dTx8eXe9-uKY3dRXolQloqeuooXeuG1k03oVd22Lv6yryKGjd0Zvx9aExHdIleu-wweqPWHWrt-TN2jQB373MM_Jtef118Tm5vf90s5jfJpVkgieZXGuVMZuVqIzQOec8RyNKEIBgrJGpQsGszDSWkueQCmXByFJzK63IrTgj7_e5W---Dxj6oq1Dhc24lRtCwXMGmjMQKtLLV3TjBt_F7aISWqVKsCyq2V5V8ebgcV1sfd0avysYFGP_xdh_ceg_frh4iR3KFu2B_y08Ar0HP-sGd_-JK-Yfv8z_hf8G8MGTTQ</recordid><startdate>20230701</startdate><enddate>20230701</enddate><creator>Chang, Yih‐Ren</creator><creator>Nanae, Ryo</creator><creator>Kitamura, Satsuki</creator><creator>Nishimura, Tomonori</creator><creator>Wang, Haonan</creator><creator>Xiang, Yubei</creator><creator>Shinokita, Keisuke</creator><creator>Matsuda, Kazunari</creator><creator>Taniguchi, Takashi</creator><creator>Watanabe, Kenji</creator><creator>Nagashio, Kosuke</creator><general>Wiley Subscription Services, Inc</general><scope>24P</scope><scope>WIN</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0003-1181-8644</orcidid></search><sort><creationdate>20230701</creationdate><title>Shift‐Current Photovoltaics Based on a Non‐Centrosymmetric Phase in In‐Plane Ferroelectric SnS</title><author>Chang, Yih‐Ren ; Nanae, Ryo ; Kitamura, Satsuki ; Nishimura, Tomonori ; Wang, Haonan ; Xiang, Yubei ; Shinokita, Keisuke ; Matsuda, Kazunari ; Taniguchi, Takashi ; Watanabe, Kenji ; Nagashio, Kosuke</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4132-74f9671d7be6a3982228ea3b030e0ada456e31d479eb4280536d0a4b92d4d38d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>2D materials</topic><topic>Crystal growth</topic><topic>Ferroelectric domains</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>non‐centrosymmetry</topic><topic>Photovoltaic cells</topic><topic>Physical vapor deposition</topic><topic>shift currents</topic><topic>Solar cells</topic><topic>Stacking</topic><topic>Substrates</topic><topic>tin sulfide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chang, Yih‐Ren</creatorcontrib><creatorcontrib>Nanae, Ryo</creatorcontrib><creatorcontrib>Kitamura, Satsuki</creatorcontrib><creatorcontrib>Nishimura, Tomonori</creatorcontrib><creatorcontrib>Wang, Haonan</creatorcontrib><creatorcontrib>Xiang, Yubei</creatorcontrib><creatorcontrib>Shinokita, Keisuke</creatorcontrib><creatorcontrib>Matsuda, Kazunari</creatorcontrib><creatorcontrib>Taniguchi, Takashi</creatorcontrib><creatorcontrib>Watanabe, Kenji</creatorcontrib><creatorcontrib>Nagashio, Kosuke</creatorcontrib><collection>Wiley-Blackwell Open Access Titles</collection><collection>Wiley Free Content</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>MEDLINE - Academic</collection><jtitle>Advanced materials (Weinheim)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chang, Yih‐Ren</au><au>Nanae, Ryo</au><au>Kitamura, Satsuki</au><au>Nishimura, Tomonori</au><au>Wang, Haonan</au><au>Xiang, Yubei</au><au>Shinokita, Keisuke</au><au>Matsuda, Kazunari</au><au>Taniguchi, Takashi</au><au>Watanabe, Kenji</au><au>Nagashio, Kosuke</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Shift‐Current Photovoltaics Based on a Non‐Centrosymmetric Phase in In‐Plane Ferroelectric SnS</atitle><jtitle>Advanced materials (Weinheim)</jtitle><addtitle>Adv Mater</addtitle><date>2023-07-01</date><risdate>2023</risdate><volume>35</volume><issue>29</issue><spage>e2301172</spage><epage>n/a</epage><pages>e2301172-n/a</pages><issn>0935-9648</issn><eissn>1521-4095</eissn><abstract>The shift‐current photovoltaics of group‐IV monochalcogenides has been predicted to be comparable to those of state‐of‐the‐art Si‐based solar cells. However, its exploration has been prevented from the centrosymmetric layer stacking in the thermodynamically stable bulk crystal. Herein, the non‐centrosymmetric layer stacking of tin sulfide (SnS) is stabilized in the bottom regions of SnS crystals grown on a van der Waals substrate by physical vapor deposition and the shift current of SnS, by combining the polarization angle dependence and circular photogalvanic effect, is demonstrated. Furthermore, 180° ferroelectric domains in SnS are verified through both piezoresponse force microscopy and shift‐current mapping techniques. Based on these results, an atomic model of the ferroelectric domain boundary is proposed. The direct observation of shift current and ferroelectric domains reported herein paves a new path for future studies on shift‐current photovoltaics.
A non‐centrosymmetric layer stacking phase of 2D tin sulfide (SnS) is successfully achieved on van der Waals substrates and the shift current in SnS is demonstrated. Following the PFM observation that reveals the existence of ferroelectric domains, an atomic model of the ferroelectric domain boundary is proposed.</abstract><cop>Germany</cop><pub>Wiley Subscription Services, Inc</pub><pmid>37148528</pmid><doi>10.1002/adma.202301172</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0003-1181-8644</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0935-9648 |
| ispartof | Advanced materials (Weinheim), 2023-07, Vol.35 (29), p.e2301172-n/a |
| issn | 0935-9648 1521-4095 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_2810921036 |
| source | Wiley Online Library All Journals |
| subjects | 2D materials Crystal growth Ferroelectric domains Ferroelectric materials Ferroelectricity non‐centrosymmetry Photovoltaic cells Physical vapor deposition shift currents Solar cells Stacking Substrates tin sulfide |
| title | Shift‐Current Photovoltaics Based on a Non‐Centrosymmetric Phase in In‐Plane Ferroelectric SnS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T22%3A25%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Shift%E2%80%90Current%20Photovoltaics%20Based%20on%20a%20Non%E2%80%90Centrosymmetric%20Phase%20in%20In%E2%80%90Plane%20Ferroelectric%20SnS&rft.jtitle=Advanced%20materials%20(Weinheim)&rft.au=Chang,%20Yih%E2%80%90Ren&rft.date=2023-07-01&rft.volume=35&rft.issue=29&rft.spage=e2301172&rft.epage=n/a&rft.pages=e2301172-n/a&rft.issn=0935-9648&rft.eissn=1521-4095&rft_id=info:doi/10.1002/adma.202301172&rft_dat=%3Cproquest_cross%3E2839656317%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2839656317&rft_id=info:pmid/37148528&rfr_iscdi=true |