Crystal Structures and Thermoelectric Properties of Layered Compounds in the ATe-Bi2Te3 (A = Ge, Sn, Pb) Systems
The search for new chalogenide thermoelectric materials with complex crystal structures has led many researchers to focus on tetradymite-like layered ternary compounds. Single-crystal and powder x-ray diffraction studies of compounds in the nATe .mBi2Te3 (A = Ge, Sn, Pb) homologous series in the pse...
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Veröffentlicht in: | Inorganic materials 2004-05, Vol.40 (5), p.451-460 |
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description | The search for new chalogenide thermoelectric materials with complex crystal structures has led many researchers to focus on tetradymite-like layered ternary compounds. Single-crystal and powder x-ray diffraction studies of compounds in the nATe .mBi2Te3 (A = Ge, Sn, Pb) homologous series in the pseudobinary systems ATe-Bi2Te3 reveal a marked dissimilarity of the GeTeBi2Te3 system from SnTe-Bi2Te3 and PbTe-Bi2Te3. The GeTe-Bi2Te3 system contains, along with GeBi2Te4 (n/m = 1), GeTe-rich (n/m > 1) and Bi2Te3-rich (n/m < 1) members of the nGeTe mBi2Te3 series. In contrast, the Sn and Pb systems contain only Bi2Te3-rich compounds (n/m < 1). This dissimilarity is interpreted in terms of the crystal structures of GeTe, SnTe, and PbTe. The thermoelectric properties of nPbTe DT mBi2Te3 compounds are studied in a broad temperature range. The thermoelectric figures of merit of unoptimized n-type PbBi4Te7 and PbBi2Te4 are ZT = 0.5 and 0.4 at 600 and 650 K, respectively. Comparison of the thermoelectric properties of the isostructural 12-layer compounds GeBi4Te7, SnBi4Te7, and PbBi4Te7 indicates that the maximum in thermopower shifts to higher temperatures in going from the Ge to Sn and Pb compounds. |
doi_str_mv | 10.1023/B:INMA.0000027590.43038.a8 |
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Single-crystal and powder x-ray diffraction studies of compounds in the nATe .mBi2Te3 (A = Ge, Sn, Pb) homologous series in the pseudobinary systems ATe-Bi2Te3 reveal a marked dissimilarity of the GeTeBi2Te3 system from SnTe-Bi2Te3 and PbTe-Bi2Te3. The GeTe-Bi2Te3 system contains, along with GeBi2Te4 (n/m = 1), GeTe-rich (n/m > 1) and Bi2Te3-rich (n/m < 1) members of the nGeTe mBi2Te3 series. In contrast, the Sn and Pb systems contain only Bi2Te3-rich compounds (n/m < 1). This dissimilarity is interpreted in terms of the crystal structures of GeTe, SnTe, and PbTe. The thermoelectric properties of nPbTe DT mBi2Te3 compounds are studied in a broad temperature range. The thermoelectric figures of merit of unoptimized n-type PbBi4Te7 and PbBi2Te4 are ZT = 0.5 and 0.4 at 600 and 650 K, respectively. Comparison of the thermoelectric properties of the isostructural 12-layer compounds GeBi4Te7, SnBi4Te7, and PbBi4Te7 indicates that the maximum in thermopower shifts to higher temperatures in going from the Ge to Sn and Pb compounds.</description><identifier>ISSN: 0020-1685</identifier><identifier>DOI: 10.1023/B:INMA.0000027590.43038.a8</identifier><language>eng</language><ispartof>Inorganic materials, 2004-05, Vol.40 (5), p.451-460</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Shelimova, L E</creatorcontrib><creatorcontrib>Karpinskii, O G</creatorcontrib><creatorcontrib>Konstantinov, P P</creatorcontrib><creatorcontrib>Avilov, E S</creatorcontrib><creatorcontrib>Kretova, M A</creatorcontrib><creatorcontrib>Zemskov, V S</creatorcontrib><title>Crystal Structures and Thermoelectric Properties of Layered Compounds in the ATe-Bi2Te3 (A = Ge, Sn, Pb) Systems</title><title>Inorganic materials</title><description>The search for new chalogenide thermoelectric materials with complex crystal structures has led many researchers to focus on tetradymite-like layered ternary compounds. Single-crystal and powder x-ray diffraction studies of compounds in the nATe .mBi2Te3 (A = Ge, Sn, Pb) homologous series in the pseudobinary systems ATe-Bi2Te3 reveal a marked dissimilarity of the GeTeBi2Te3 system from SnTe-Bi2Te3 and PbTe-Bi2Te3. The GeTe-Bi2Te3 system contains, along with GeBi2Te4 (n/m = 1), GeTe-rich (n/m > 1) and Bi2Te3-rich (n/m < 1) members of the nGeTe mBi2Te3 series. In contrast, the Sn and Pb systems contain only Bi2Te3-rich compounds (n/m < 1). This dissimilarity is interpreted in terms of the crystal structures of GeTe, SnTe, and PbTe. The thermoelectric properties of nPbTe DT mBi2Te3 compounds are studied in a broad temperature range. The thermoelectric figures of merit of unoptimized n-type PbBi4Te7 and PbBi2Te4 are ZT = 0.5 and 0.4 at 600 and 650 K, respectively. Comparison of the thermoelectric properties of the isostructural 12-layer compounds GeBi4Te7, SnBi4Te7, and PbBi4Te7 indicates that the maximum in thermopower shifts to higher temperatures in going from the Ge to Sn and Pb compounds.</description><issn>0020-1685</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNotjV1LwzAYhXOh4Pz4Dy9eiMJakyZpE8GLrugcTB2s9yNL37FKv0zSi_17K3puDpzncA4ht4zGjCb8cfG0-njPY_qrJJOaxoJTrmKjzshsimjEUiUvyKX3X1NFSKVnZCjcyQfTwDa40YbRoQfTVVAe0bU9NmiDqy1sXD-gC_VE-wOszQkdVlD07dCPXeWh7iAcEfISo0WdlMjhPodnWOIctt0cNvsH2E4_2Pprcn4wjcebf78i5etLWbxF68_lqsjX0cCUCBGmWgpqBWPcJvuESy32GU85y1JJqUSWaU4zqSwTWlYmS1NRVZYZKYy2XPMrcvc3O7j-e0Qfdm3tLTaN6bAf_S5RjGqWSv4Dck5afA</recordid><startdate>20040501</startdate><enddate>20040501</enddate><creator>Shelimova, L E</creator><creator>Karpinskii, O G</creator><creator>Konstantinov, P P</creator><creator>Avilov, E S</creator><creator>Kretova, M A</creator><creator>Zemskov, V S</creator><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20040501</creationdate><title>Crystal Structures and Thermoelectric Properties of Layered Compounds in the ATe-Bi2Te3 (A = Ge, Sn, Pb) Systems</title><author>Shelimova, L E ; Karpinskii, O G ; Konstantinov, P P ; Avilov, E S ; Kretova, M A ; Zemskov, V S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p184t-e69540c4113c2b23594b73631765005e17930758c1495da7664ddc1a54a9c393</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shelimova, L E</creatorcontrib><creatorcontrib>Karpinskii, O G</creatorcontrib><creatorcontrib>Konstantinov, P P</creatorcontrib><creatorcontrib>Avilov, E S</creatorcontrib><creatorcontrib>Kretova, M A</creatorcontrib><creatorcontrib>Zemskov, V S</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Inorganic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shelimova, L E</au><au>Karpinskii, O G</au><au>Konstantinov, P P</au><au>Avilov, E S</au><au>Kretova, M A</au><au>Zemskov, V S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Crystal Structures and Thermoelectric Properties of Layered Compounds in the ATe-Bi2Te3 (A = Ge, Sn, Pb) Systems</atitle><jtitle>Inorganic materials</jtitle><date>2004-05-01</date><risdate>2004</risdate><volume>40</volume><issue>5</issue><spage>451</spage><epage>460</epage><pages>451-460</pages><issn>0020-1685</issn><abstract>The search for new chalogenide thermoelectric materials with complex crystal structures has led many researchers to focus on tetradymite-like layered ternary compounds. Single-crystal and powder x-ray diffraction studies of compounds in the nATe .mBi2Te3 (A = Ge, Sn, Pb) homologous series in the pseudobinary systems ATe-Bi2Te3 reveal a marked dissimilarity of the GeTeBi2Te3 system from SnTe-Bi2Te3 and PbTe-Bi2Te3. The GeTe-Bi2Te3 system contains, along with GeBi2Te4 (n/m = 1), GeTe-rich (n/m > 1) and Bi2Te3-rich (n/m < 1) members of the nGeTe mBi2Te3 series. In contrast, the Sn and Pb systems contain only Bi2Te3-rich compounds (n/m < 1). This dissimilarity is interpreted in terms of the crystal structures of GeTe, SnTe, and PbTe. The thermoelectric properties of nPbTe DT mBi2Te3 compounds are studied in a broad temperature range. The thermoelectric figures of merit of unoptimized n-type PbBi4Te7 and PbBi2Te4 are ZT = 0.5 and 0.4 at 600 and 650 K, respectively. Comparison of the thermoelectric properties of the isostructural 12-layer compounds GeBi4Te7, SnBi4Te7, and PbBi4Te7 indicates that the maximum in thermopower shifts to higher temperatures in going from the Ge to Sn and Pb compounds.</abstract><doi>10.1023/B:INMA.0000027590.43038.a8</doi><tpages>10</tpages></addata></record> |
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title | Crystal Structures and Thermoelectric Properties of Layered Compounds in the ATe-Bi2Te3 (A = Ge, Sn, Pb) Systems |
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