Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC

The diffusion of boron in 4H-SiC has been studied by secondary ion mass spectrometry. Three kinds of epitaxial layers have been used, highly p-type, highly n-type and low doped n-type (intrinsic). A boron diffusion source has been introduced in the samples by ion implantation. Subsequent anneals hav...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Materials science forum 2004-01, Vol.457-460, p.917-920
Hauptverfasser:	Konstantinov, Andrey O., Schöner, Adolf, Linnarsson, Margareta K., Janson, Martin S., Svensson, Bengt Gunnar
Format:	Artikel
Sprache:	eng
Schlagworte:	4H-SiC boron diffusion SIMS
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!