SiGe HBTs on bonded SOI incorporating buried silicide layers

A technology is described for fabricating SiGe heterojunction bipolar transistors (HBTs) on wafer-bonded silicon-on-insulator (SOI) substrates that incorporate buried tungsten silicide layers for collector resistance reduction or buried groundplanes for crosstalk suppression. The physical structure...

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Veröffentlicht in:	IEEE transactions on electron devices 2005-03, Vol.52 (3), p.317-324
Hauptverfasser:	Bain, M., El Mubarek, H.A.W., Bonar, J.M., Wang, Y., Buiu, O., Gamble, H., Armstrong, B.M., Hemment, P.L.F., Hall, S., Ashburn, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Accumulators Annealing Applied sciences Bonding Buried layer Collectors Conductivity Devices Diodes Electron microscopy Electronics Exact sciences and technology Germanium alloys groundplane Heterojunction bipolar transistors Intermetallics Leakage currents Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiGe heterojunction bipolar transistors (HBTs) Silicides Silicon alloys Silicon germanides Silicon on insulator technology silicon-on-insulator (SOI) Transistors Tungsten Tungsten compounds tungsten silicide Wafer bonding
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