High-Performance Self-Driven Solar-Blind Ultraviolet Photodetectors Based on HfZrO2/β-Ga2O3 Heterojunctions
Ga2O3 is a wide-bandgap semiconductor that has shown great potential for application in solar-blind ultraviolet (UV) photodetectors. However, the responsivity and detectivity of Ga2O3-based self-driven solar-blind UV photodetectors are insufficient for practical applications at present because of th...
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Veröffentlicht in: | ACS applied materials & interfaces 2023-05, Vol.15 (18), p.22263-22273 |
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