4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues

In this paper we report on the fabrication of large area 4H-SiC Schottky diodes based on SiC substrate materials with reduced defect density. Several techniques improving material quality including micropipe filling technique and porous SiC fabrication technique were used to reduce defect density in...

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Veröffentlicht in:	Materials science forum 2004-01, Vol.457-460, p.985-988
Hauptverfasser:	Soukhoveev, V., Hallin, Christer, Kakanakov, Roumen, Janzén, Erik, Mynbaeva, Marina G., Dmitriev, Vladimir, Syrkin, Alexander
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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