Influence of Sn incorporation on the properties of CuInS2 thin films grown by vacuum evaporation method

Influence of Sn incorporation on the properties of CuInS2 thin films grown by vacuum evaporation method

Structural, morphological and optical properties of Sn-doped CuInS2 thin films grown by double source thermal evaporation method were studied. Firstly, the films were annealed in vacuum after evaporation from 250 to 500 DDGC for Sn deposition time equal to 3 min. Secondly, the films deposited for se...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Thin solid films 2006-07, Vol.511-512 (Complete), p.125-129
Hauptverfasser: Zribi, M., Rabeh, M. Ben, Brini, R., Kanzari, M., Rezig, B.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 129
container_issue Complete
container_start_page 125
container_title Thin solid films
container_volume 511-512
creator Zribi, M.
Rabeh, M. Ben
Brini, R.
Kanzari, M.
Rezig, B.
description Structural, morphological and optical properties of Sn-doped CuInS2 thin films grown by double source thermal evaporation method were studied. Firstly, the films were annealed in vacuum after evaporation from 250 to 500 DDGC for Sn deposition time equal to 3 min. Secondly, the films deposited for several Sn evaporation times were annealed in vacuum after evaporation at 500 DDGC. The X-ray diffraction spectra indicated that polycrystalline Sn-doped CuInS2 films were obtained and no Sn binary or ternary phases are observed for the Sn evaporation times equal to 5 min. Scanning electron microscopy observation revealed the decrease of the surface crystallinity with increasing the Sn evaporation times and the annealing temperatures. The Sn-doped samples after annealing have bandgap energy of 1.42-1.50 eV. Furthermore, we found that the Sn-doped CuInS2 thin films exhibit N-type conductivity after annealing.
doi_str_mv 10.1016/j.tsf.2005.11.091
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_28063985</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>28063985</sourcerecordid><originalsourceid>FETCH-LOGICAL-c276t-2efcb4a59403002cef847094746fdafe2b5641741fa2948b8d28180003df688d3</originalsourceid><addsrcrecordid>eNo9kD1rwzAQhjW00DTtD-imqZvdkyzb8lhCPwKBDmlnIcunxMGWXMlOyb-vQ0rh4B3u4eXuIeSBQcqAFU-HdIw25QB5ylgKFbsiCwABSQEV3JDbGA8AwDjPFmS3drab0Bmk3tKto60zPgw-6LH1js4z7pEOwQ8YxhbjmVpNa7fl86J11LZdH-ku-B9H6xM9ajNNPcWj_q_ocdz75o5cW91FvP_LJfl6fflcvSebj7f16nmTGF4WY8LRmlrovBKQAXCDVooSKlGKwjbaIq_zQrBSMKt5JWQtGy6ZnL_JGltI2WRL8njpnU_-njCOqm-jwa7TDv0UFZdQZJXMZ5BdQBN8jAGtGkLb63BSDNRZozqoWaM6a1SMqVlj9gv-o2mv</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28063985</pqid></control><display><type>article</type><title>Influence of Sn incorporation on the properties of CuInS2 thin films grown by vacuum evaporation method</title><source>Elsevier ScienceDirect Journals</source><creator>Zribi, M. ; Rabeh, M. Ben ; Brini, R. ; Kanzari, M. ; Rezig, B.</creator><creatorcontrib>Zribi, M. ; Rabeh, M. Ben ; Brini, R. ; Kanzari, M. ; Rezig, B.</creatorcontrib><description>Structural, morphological and optical properties of Sn-doped CuInS2 thin films grown by double source thermal evaporation method were studied. Firstly, the films were annealed in vacuum after evaporation from 250 to 500 DDGC for Sn deposition time equal to 3 min. Secondly, the films deposited for several Sn evaporation times were annealed in vacuum after evaporation at 500 DDGC. The X-ray diffraction spectra indicated that polycrystalline Sn-doped CuInS2 films were obtained and no Sn binary or ternary phases are observed for the Sn evaporation times equal to 5 min. Scanning electron microscopy observation revealed the decrease of the surface crystallinity with increasing the Sn evaporation times and the annealing temperatures. The Sn-doped samples after annealing have bandgap energy of 1.42-1.50 eV. Furthermore, we found that the Sn-doped CuInS2 thin films exhibit N-type conductivity after annealing.</description><identifier>ISSN: 0040-6090</identifier><identifier>DOI: 10.1016/j.tsf.2005.11.091</identifier><language>eng</language><ispartof>Thin solid films, 2006-07, Vol.511-512 (Complete), p.125-129</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c276t-2efcb4a59403002cef847094746fdafe2b5641741fa2948b8d28180003df688d3</citedby><cites>FETCH-LOGICAL-c276t-2efcb4a59403002cef847094746fdafe2b5641741fa2948b8d28180003df688d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27902,27903</link.rule.ids></links><search><creatorcontrib>Zribi, M.</creatorcontrib><creatorcontrib>Rabeh, M. Ben</creatorcontrib><creatorcontrib>Brini, R.</creatorcontrib><creatorcontrib>Kanzari, M.</creatorcontrib><creatorcontrib>Rezig, B.</creatorcontrib><title>Influence of Sn incorporation on the properties of CuInS2 thin films grown by vacuum evaporation method</title><title>Thin solid films</title><description>Structural, morphological and optical properties of Sn-doped CuInS2 thin films grown by double source thermal evaporation method were studied. Firstly, the films were annealed in vacuum after evaporation from 250 to 500 DDGC for Sn deposition time equal to 3 min. Secondly, the films deposited for several Sn evaporation times were annealed in vacuum after evaporation at 500 DDGC. The X-ray diffraction spectra indicated that polycrystalline Sn-doped CuInS2 films were obtained and no Sn binary or ternary phases are observed for the Sn evaporation times equal to 5 min. Scanning electron microscopy observation revealed the decrease of the surface crystallinity with increasing the Sn evaporation times and the annealing temperatures. The Sn-doped samples after annealing have bandgap energy of 1.42-1.50 eV. Furthermore, we found that the Sn-doped CuInS2 thin films exhibit N-type conductivity after annealing.</description><issn>0040-6090</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNo9kD1rwzAQhjW00DTtD-imqZvdkyzb8lhCPwKBDmlnIcunxMGWXMlOyb-vQ0rh4B3u4eXuIeSBQcqAFU-HdIw25QB5ylgKFbsiCwABSQEV3JDbGA8AwDjPFmS3drab0Bmk3tKto60zPgw-6LH1js4z7pEOwQ8YxhbjmVpNa7fl86J11LZdH-ku-B9H6xM9ajNNPcWj_q_ocdz75o5cW91FvP_LJfl6fflcvSebj7f16nmTGF4WY8LRmlrovBKQAXCDVooSKlGKwjbaIq_zQrBSMKt5JWQtGy6ZnL_JGltI2WRL8njpnU_-njCOqm-jwa7TDv0UFZdQZJXMZ5BdQBN8jAGtGkLb63BSDNRZozqoWaM6a1SMqVlj9gv-o2mv</recordid><startdate>20060726</startdate><enddate>20060726</enddate><creator>Zribi, M.</creator><creator>Rabeh, M. Ben</creator><creator>Brini, R.</creator><creator>Kanzari, M.</creator><creator>Rezig, B.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20060726</creationdate><title>Influence of Sn incorporation on the properties of CuInS2 thin films grown by vacuum evaporation method</title><author>Zribi, M. ; Rabeh, M. Ben ; Brini, R. ; Kanzari, M. ; Rezig, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c276t-2efcb4a59403002cef847094746fdafe2b5641741fa2948b8d28180003df688d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zribi, M.</creatorcontrib><creatorcontrib>Rabeh, M. Ben</creatorcontrib><creatorcontrib>Brini, R.</creatorcontrib><creatorcontrib>Kanzari, M.</creatorcontrib><creatorcontrib>Rezig, B.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zribi, M.</au><au>Rabeh, M. Ben</au><au>Brini, R.</au><au>Kanzari, M.</au><au>Rezig, B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of Sn incorporation on the properties of CuInS2 thin films grown by vacuum evaporation method</atitle><jtitle>Thin solid films</jtitle><date>2006-07-26</date><risdate>2006</risdate><volume>511-512</volume><issue>Complete</issue><spage>125</spage><epage>129</epage><pages>125-129</pages><issn>0040-6090</issn><abstract>Structural, morphological and optical properties of Sn-doped CuInS2 thin films grown by double source thermal evaporation method were studied. Firstly, the films were annealed in vacuum after evaporation from 250 to 500 DDGC for Sn deposition time equal to 3 min. Secondly, the films deposited for several Sn evaporation times were annealed in vacuum after evaporation at 500 DDGC. The X-ray diffraction spectra indicated that polycrystalline Sn-doped CuInS2 films were obtained and no Sn binary or ternary phases are observed for the Sn evaporation times equal to 5 min. Scanning electron microscopy observation revealed the decrease of the surface crystallinity with increasing the Sn evaporation times and the annealing temperatures. The Sn-doped samples after annealing have bandgap energy of 1.42-1.50 eV. Furthermore, we found that the Sn-doped CuInS2 thin films exhibit N-type conductivity after annealing.</abstract><doi>10.1016/j.tsf.2005.11.091</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0040-6090
ispartof Thin solid films, 2006-07, Vol.511-512 (Complete), p.125-129
issn 0040-6090
language eng
recordid cdi_proquest_miscellaneous_28063985
source Elsevier ScienceDirect Journals
title Influence of Sn incorporation on the properties of CuInS2 thin films grown by vacuum evaporation method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T08%3A22%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Influence%20of%20Sn%20incorporation%20on%20the%20properties%20of%20CuInS2%20thin%20films%20grown%20by%20vacuum%20evaporation%20method&rft.jtitle=Thin%20solid%20films&rft.au=Zribi,%20M.&rft.date=2006-07-26&rft.volume=511-512&rft.issue=Complete&rft.spage=125&rft.epage=129&rft.pages=125-129&rft.issn=0040-6090&rft_id=info:doi/10.1016/j.tsf.2005.11.091&rft_dat=%3Cproquest_cross%3E28063985%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28063985&rft_id=info:pmid/&rfr_iscdi=true