NiCuZn ferrite thin films for RF integrated inductors

NiCuZn ferrite thin films for RF integrated inductors

Ni0.4Cu0.2Zn0.4Fe2O4 thin films were fabricated on Si substrates by sol-gel method and rapid thermal annealing (RTA), their structural and magnetic properties were characterized using an X-diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), and alternating gradient magnet...

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Veröffentlicht in:Materials letters 2006-05, Vol.60 (11), p.1403-1406
Hauptverfasser: Liu, Feng, Ren, Tianling, Yang, Chen, Liu, Litian, Wang, A.Z., Yu, Jun
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Sprache:eng
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Integrated inductors
Ni0.4Cu0.2Zn0.4Fe2O4 thin films
Rapid thermal annealing
Sol-gel method
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container_end_page 1406
container_issue 11
container_start_page 1403
container_title Materials letters
container_volume 60
creator Liu, Feng
Ren, Tianling
Yang, Chen
Liu, Litian
Wang, A.Z.
Yu, Jun
description Ni0.4Cu0.2Zn0.4Fe2O4 thin films were fabricated on Si substrates by sol-gel method and rapid thermal annealing (RTA), their structural and magnetic properties were characterized using an X-diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), and alternating gradient magnetometer (AGM). The experimental results show that sol-gel method can lower the crystallization temperature of the magnetic thin films effectively, which is beneficial to the realization of low temperature process of magnetic thin films. The thin films in the paper exhibit excellent soft magnetic performance. Finally, a micro inductor with integrated Ni0.4Cu0.2Zn0.4Fe2O4 thin film for RF ICs was fabricated and measured. The work shows that Ni0.4Cu0.2Zn0.4Fe2O4 thin films can be integrated into RF integrated inductors.
doi_str_mv 10.1016/j.matlet.2005.11.050
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subjects Integrated inductors
Ni0.4Cu0.2Zn0.4Fe2O4 thin films
Rapid thermal annealing
Sol-gel method
title NiCuZn ferrite thin films for RF integrated inductors
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