Atomic layer deposition of HfO2 thin films and nanolayered HfO2-Al2O3-Nb2O5 dielectrics

Smooth, 4-6-nm thick hafnium oxide films were grown by atomic layer deposition from HfI^sub 4^ or HfCl^sub 4^ and H^sub 2^O on SiO^sub 2^/Si(1 0 0) substrates at 300 °C. Non-uniform films were obtained on hydrogen-terminated Si(1 0 0). The stoichiometry of the films corresponded to that of HfO^sub 2...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2003-05, Vol.14 (5-7), p.361-367
Hauptverfasser:	KUKLI, Kaupo, RITALA, Mikko, LESKELÄ, Markku, SAJAVAARA, Timo, KEINONEN, Juhani, GILMER, David C, HEGDE, Rama, RAI, Raghaw, PRABHU, Lata
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Semiconductors
Online-Zugang:	Volltext
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