Inductance-controlled electroabsorption Modulator modules using the flip-chip bonding technique
The wire-bonding technique is widely used for the connections between the electroabsorption (EA) modulator chips and the electrical signal transmission lines. However, the parasitic inductance of the bonding wire degrades the electrical characteristics of the EA modulator modules in a high-frequency...
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| Veröffentlicht in: | Journal of lightwave technology 2005-02, Vol.23 (2), p.582-587 |
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| container_title | Journal of lightwave technology |
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| creator | Hatta, T. Miyahara, T. Ishizaki, M. Okada, N. Zaizen, S. Motoshima, K. Kasahara, K. |
| description | The wire-bonding technique is widely used for the connections between the electroabsorption (EA) modulator chips and the electrical signal transmission lines. However, the parasitic inductance of the bonding wire degrades the electrical characteristics of the EA modulator modules in a high-frequency region. In this paper, we theoretically analyze the influence of parasitic inductance on the base-band digital transmission and obtain the relationship between the EA modulator capacitance and the optimum lead inductance. For precise inductance control, we introduced the flip-chip bonding (FCB) technique and fabricated 40-Gb/s EA modulator modules. |
| doi_str_mv | 10.1109/JLT.2004.842303 |
| format | Article |
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However, the parasitic inductance of the bonding wire degrades the electrical characteristics of the EA modulator modules in a high-frequency region. In this paper, we theoretically analyze the influence of parasitic inductance on the base-band digital transmission and obtain the relationship between the EA modulator capacitance and the optimum lead inductance. For precise inductance control, we introduced the flip-chip bonding (FCB) technique and fabricated 40-Gb/s EA modulator modules.</description><identifier>ISSN: 0733-8724</identifier><identifier>EISSN: 1558-2213</identifier><identifier>DOI: 10.1109/JLT.2004.842303</identifier><identifier>CODEN: JLTEDG</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bandwidth ; Bonding ; Capacitance ; Digital modulation ; Electric wire ; electroabsorption (EA) ; Electrodes ; flip-chip devices ; Gold ; Impedance ; Inductance ; Joints ; Modulators ; Modules ; Optical modulation ; Optimization ; Semiconductor materials ; Signal transmission ; Transmission line theory</subject><ispartof>Journal of lightwave technology, 2005-02, Vol.23 (2), p.582-587</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c300t-2f98f3a22ae34cd814e09ca63019eae091dfc8ca2d763f4e0b304b796fe70b673</citedby><cites>FETCH-LOGICAL-c300t-2f98f3a22ae34cd814e09ca63019eae091dfc8ca2d763f4e0b304b796fe70b673</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1402536$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,778,782,794,27913,27914,54747</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1402536$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hatta, T.</creatorcontrib><creatorcontrib>Miyahara, T.</creatorcontrib><creatorcontrib>Ishizaki, M.</creatorcontrib><creatorcontrib>Okada, N.</creatorcontrib><creatorcontrib>Zaizen, S.</creatorcontrib><creatorcontrib>Motoshima, K.</creatorcontrib><creatorcontrib>Kasahara, K.</creatorcontrib><title>Inductance-controlled electroabsorption Modulator modules using the flip-chip bonding technique</title><title>Journal of lightwave technology</title><addtitle>JLT</addtitle><description>The wire-bonding technique is widely used for the connections between the electroabsorption (EA) modulator chips and the electrical signal transmission lines. However, the parasitic inductance of the bonding wire degrades the electrical characteristics of the EA modulator modules in a high-frequency region. In this paper, we theoretically analyze the influence of parasitic inductance on the base-band digital transmission and obtain the relationship between the EA modulator capacitance and the optimum lead inductance. For precise inductance control, we introduced the flip-chip bonding (FCB) technique and fabricated 40-Gb/s EA modulator modules.</description><subject>Bandwidth</subject><subject>Bonding</subject><subject>Capacitance</subject><subject>Digital modulation</subject><subject>Electric wire</subject><subject>electroabsorption (EA)</subject><subject>Electrodes</subject><subject>flip-chip devices</subject><subject>Gold</subject><subject>Impedance</subject><subject>Inductance</subject><subject>Joints</subject><subject>Modulators</subject><subject>Modules</subject><subject>Optical modulation</subject><subject>Optimization</subject><subject>Semiconductor materials</subject><subject>Signal transmission</subject><subject>Transmission line theory</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkT1PwzAQhi0EEqUwM7BEDIgl7fmjsTMixKeKWMpsOc6FBqV2sJOBf49LkZAYYLpXd8_d6e4l5JTCjFIo54_L1YwBiJkSjAPfIxO6WKicMcr3yQQk57mSTBySoxjfAKgQSk6IfnD1aAfjLObWuyH4rsM6ww5t0qaKPvRD61325OuxM4MP2WarMGZjbN1rNqwxa7q2z-267bPKu_ori3bt2vcRj8lBY7qIJ99xSl5ub1bX9_ny-e7h-mqZWw4w5KwpVcMNYwa5sLWiAqG0puBASzRJ07qxyhpWy4I3qVhxEJUsiwYlVIXkU3Kxm9sHn9bGQW_aaLHrjEM_Rs0UiFItIIGXf4K0kJRJrrj8HwXGyvRxRRN6_gt982Nw6WKtipJSKaVI0HwH2eBjDNjoPrQbEz7SJL31UCcP9dZDvfMwdZztOlpE_KEFsAUv-CdHh5hA</recordid><startdate>200502</startdate><enddate>200502</enddate><creator>Hatta, T.</creator><creator>Miyahara, T.</creator><creator>Ishizaki, M.</creator><creator>Okada, N.</creator><creator>Zaizen, S.</creator><creator>Motoshima, K.</creator><creator>Kasahara, K.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>200502</creationdate><title>Inductance-controlled electroabsorption Modulator modules using the flip-chip bonding technique</title><author>Hatta, T. ; Miyahara, T. ; Ishizaki, M. ; Okada, N. ; Zaizen, S. ; Motoshima, K. ; Kasahara, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c300t-2f98f3a22ae34cd814e09ca63019eae091dfc8ca2d763f4e0b304b796fe70b673</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Bandwidth</topic><topic>Bonding</topic><topic>Capacitance</topic><topic>Digital modulation</topic><topic>Electric wire</topic><topic>electroabsorption (EA)</topic><topic>Electrodes</topic><topic>flip-chip devices</topic><topic>Gold</topic><topic>Impedance</topic><topic>Inductance</topic><topic>Joints</topic><topic>Modulators</topic><topic>Modules</topic><topic>Optical modulation</topic><topic>Optimization</topic><topic>Semiconductor materials</topic><topic>Signal transmission</topic><topic>Transmission line theory</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hatta, T.</creatorcontrib><creatorcontrib>Miyahara, T.</creatorcontrib><creatorcontrib>Ishizaki, M.</creatorcontrib><creatorcontrib>Okada, N.</creatorcontrib><creatorcontrib>Zaizen, S.</creatorcontrib><creatorcontrib>Motoshima, K.</creatorcontrib><creatorcontrib>Kasahara, K.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of lightwave technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hatta, T.</au><au>Miyahara, T.</au><au>Ishizaki, M.</au><au>Okada, N.</au><au>Zaizen, S.</au><au>Motoshima, K.</au><au>Kasahara, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Inductance-controlled electroabsorption Modulator modules using the flip-chip bonding technique</atitle><jtitle>Journal of lightwave technology</jtitle><stitle>JLT</stitle><date>2005-02</date><risdate>2005</risdate><volume>23</volume><issue>2</issue><spage>582</spage><epage>587</epage><pages>582-587</pages><issn>0733-8724</issn><eissn>1558-2213</eissn><coden>JLTEDG</coden><abstract>The wire-bonding technique is widely used for the connections between the electroabsorption (EA) modulator chips and the electrical signal transmission lines. However, the parasitic inductance of the bonding wire degrades the electrical characteristics of the EA modulator modules in a high-frequency region. In this paper, we theoretically analyze the influence of parasitic inductance on the base-band digital transmission and obtain the relationship between the EA modulator capacitance and the optimum lead inductance. For precise inductance control, we introduced the flip-chip bonding (FCB) technique and fabricated 40-Gb/s EA modulator modules.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JLT.2004.842303</doi><tpages>6</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Bandwidth Bonding Capacitance Digital modulation Electric wire electroabsorption (EA) Electrodes flip-chip devices Gold Impedance Inductance Joints Modulators Modules Optical modulation Optimization Semiconductor materials Signal transmission Transmission line theory |
| title | Inductance-controlled electroabsorption Modulator modules using the flip-chip bonding technique |
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