Tunneling controlled field emission of boron nitride nanofilm

Hexagonal polycrystalline boron nitride (BN) films are synthesized on Si substrates by plasma assisted chemical vapor deposition. In the case of the BN films thicker than 20 nm, the turn-on electric field of the electron emission decreases with increasing surface roughness. It is suggested that elec...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Diamond and related materials 2003-03, Vol.12 (3), p.464-468
Hauptverfasser:	Sugino, Takashi, Kimura, Chiharu, Yamamoto, Tomohide, Funakawa, Shingo
Format:	Artikel
Sprache:	eng
Schlagworte:	Boron nitride film Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron and ion emission by liquids and solids impact phenomena Exact sciences and technology Field emission Field emission, ionization, evaporation, and desorption Fowler–Nordheim Nanofilm Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!