Transport properties of Sn-doped InSb thin films and applications to Hall element
The temperature dependence of the transport properties of undoped and Sn-doped InSb single crystal thin films grown on GaAs substrates by MBE were investigated. The temperature dependence of undoped InSb thin films was large and had maximum near room temperature, whereas the Sn-doped thin films show...
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| Veröffentlicht in: | Journal of crystal growth 2003-04, Vol.251 (1), p.560-564 |
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| container_title | Journal of crystal growth |
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| creator | Okamoto, A. Shibasaki, I. |
| description | The temperature dependence of the transport properties of undoped and Sn-doped InSb single crystal thin films grown on GaAs substrates by MBE were investigated. The temperature dependence of undoped InSb thin films was large and had maximum near room temperature, whereas the Sn-doped thin films showed very small and monotonic decrease with increasing temperature. The electron mobility of the films varied significantly in the growth direction from the InSb/GaAs hetero-interface to the InSb thin film surface. This large variation of the electron mobility in the growth direction explained the observed temperature dependence of the electron mobility for these films. The large variation of the electron mobility in the growth direction was described by a simple model of two layers with a low electron mobility layer near the hetero-interface and the other with a high electron mobility. These InSb films were used to fabricate practical and highly sensitive Hall sensors with a very small temperature dependence. |
| doi_str_mv | 10.1016/S0022-0248(02)02448-X |
| format | Article |
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The temperature dependence of undoped InSb thin films was large and had maximum near room temperature, whereas the Sn-doped thin films showed very small and monotonic decrease with increasing temperature. The electron mobility of the films varied significantly in the growth direction from the InSb/GaAs hetero-interface to the InSb thin film surface. This large variation of the electron mobility in the growth direction explained the observed temperature dependence of the electron mobility for these films. The large variation of the electron mobility in the growth direction was described by a simple model of two layers with a low electron mobility layer near the hetero-interface and the other with a high electron mobility. These InSb films were used to fabricate practical and highly sensitive Hall sensors with a very small temperature dependence.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/S0022-0248(02)02448-X</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Doping ; A3. Molecular beam epitaxy ; B1. Antimonides ; B2. Semiconducting indium antimonide ; B3. 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The temperature dependence of undoped InSb thin films was large and had maximum near room temperature, whereas the Sn-doped thin films showed very small and monotonic decrease with increasing temperature. The electron mobility of the films varied significantly in the growth direction from the InSb/GaAs hetero-interface to the InSb thin film surface. This large variation of the electron mobility in the growth direction explained the observed temperature dependence of the electron mobility for these films. The large variation of the electron mobility in the growth direction was described by a simple model of two layers with a low electron mobility layer near the hetero-interface and the other with a high electron mobility. These InSb films were used to fabricate practical and highly sensitive Hall sensors with a very small temperature dependence.</description><subject>A1. Doping</subject><subject>A3. Molecular beam epitaxy</subject><subject>B1. Antimonides</subject><subject>B2. Semiconducting indium antimonide</subject><subject>B3. Hall elements</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Low-field transport and mobility; piezoresistance</subject><subject>Physics</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhoMoWKs_QchF0cNqkv1KTyJFrVAQaYXeQjaZxUg2uyap4L83_UCPXjKEed7M5EHonJIbSmh1uyCEsYywgl8Rdp1qwbPVARpRXudZmZqHaPSLHKOTED4ISUFKRuh16aULQ-8jHnw_gI8GAu5bvHCZTneNn92iwfHdONwa2wUsncZyGKxRMpreBRx7PJPWYrDQgYun6KiVNsDZvo7R2-PDcjrL5i9Pz9P7eaaKvIgZtDpvqGZVQylVrJg0nE4g53VBOJCScd62FdUVV5rknALTjKmq1DKXwKii-Rhd7t5Ne3-uIUTRmaDAWumgXwfBOCnq5CeB5Q5Uvg_BQysGbzrpvwUlYiNQbAWKjZ10iK1AsUq5i_0AGZS0bRKlTPgLFxWvOeOJu9txkH77ZcCLoAw4Bdp4UFHo3vwz6QdHpISB</recordid><startdate>20030401</startdate><enddate>20030401</enddate><creator>Okamoto, A.</creator><creator>Shibasaki, I.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20030401</creationdate><title>Transport properties of Sn-doped InSb thin films and applications to Hall element</title><author>Okamoto, A. ; Shibasaki, I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c434t-efd3b1d26b111c249b819e387408e05288ff61d68cd0381e2d22c65da3ae21c13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>A1. Doping</topic><topic>A3. Molecular beam epitaxy</topic><topic>B1. Antimonides</topic><topic>B2. Semiconducting indium antimonide</topic><topic>B3. Hall elements</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Low-field transport and mobility; piezoresistance</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Okamoto, A.</creatorcontrib><creatorcontrib>Shibasaki, I.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Okamoto, A.</au><au>Shibasaki, I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transport properties of Sn-doped InSb thin films and applications to Hall element</atitle><jtitle>Journal of crystal growth</jtitle><date>2003-04-01</date><risdate>2003</risdate><volume>251</volume><issue>1</issue><spage>560</spage><epage>564</epage><pages>560-564</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>The temperature dependence of the transport properties of undoped and Sn-doped InSb single crystal thin films grown on GaAs substrates by MBE were investigated. The temperature dependence of undoped InSb thin films was large and had maximum near room temperature, whereas the Sn-doped thin films showed very small and monotonic decrease with increasing temperature. The electron mobility of the films varied significantly in the growth direction from the InSb/GaAs hetero-interface to the InSb thin film surface. This large variation of the electron mobility in the growth direction explained the observed temperature dependence of the electron mobility for these films. The large variation of the electron mobility in the growth direction was described by a simple model of two layers with a low electron mobility layer near the hetero-interface and the other with a high electron mobility. These InSb films were used to fabricate practical and highly sensitive Hall sensors with a very small temperature dependence.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/S0022-0248(02)02448-X</doi><tpages>5</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | A1. Doping A3. Molecular beam epitaxy B1. Antimonides B2. Semiconducting indium antimonide B3. Hall elements Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Low-field transport and mobility piezoresistance Physics |
| title | Transport properties of Sn-doped InSb thin films and applications to Hall element |
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