Temperature dependence of flat Ge/Si(0 0 1) heterostructures as observed by CAICISS
We have investigated temperature dependence of flat Ge/Si(0 0 1) heterostructures fabricated by hydrogen-surfactant mediated epitaxy, by means of coaxial impact-collision ion scattering spectroscopy (CAICISS). The transition temperature at the onset of surface roughening increases with the film thic...
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| Veröffentlicht in: | Applied surface science 2003-06, Vol.216 (1), p.19-23 |
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| creator | Tsushima, Ryo Katayama, Mitsuhiro Fujino, Toshiaki Shindo, Masato Okuno, Tomohisa Oura, Kenjiro |
| description | We have investigated temperature dependence of flat Ge/Si(0
0
1) heterostructures fabricated by hydrogen-surfactant mediated epitaxy, by means of coaxial impact-collision ion scattering spectroscopy (CAICISS). The transition temperature at the onset of surface roughening increases with the film thickness, which improves their thermal stability. Notably, for the thick films, the change in film morphology to a large island structure occurs in an almost first-order phase transition manner. These findings are consistent with our scanning electron microscopy (SEM) and atomic force microscopy (AFM) observations. The thickness dependence of the transition temperature can be correlated with strain relaxation at the surface of the initial film. |
| doi_str_mv | 10.1016/S0169-4332(03)00484-7 |
| format | Article |
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0
1) heterostructures fabricated by hydrogen-surfactant mediated epitaxy, by means of coaxial impact-collision ion scattering spectroscopy (CAICISS). The transition temperature at the onset of surface roughening increases with the film thickness, which improves their thermal stability. Notably, for the thick films, the change in film morphology to a large island structure occurs in an almost first-order phase transition manner. These findings are consistent with our scanning electron microscopy (SEM) and atomic force microscopy (AFM) observations. The thickness dependence of the transition temperature can be correlated with strain relaxation at the surface of the initial film.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/S0169-4332(03)00484-7</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Atomic, molecular, and ion beam impact and interactions with surfaces ; CAICISS ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Electron and ion emission by liquids and solids; impact phenomena ; Exact sciences and technology ; Film morphology ; Ge/Si heteroepitaxy ; Hydrogen surfactant ; Impact phenomena (including electron spectra and sputtering) ; Physics ; Solid surfaces and solid-solid interfaces ; Surface roughening ; Surface structure and topography ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thermal stability</subject><ispartof>Applied surface science, 2003-06, Vol.216 (1), p.19-23</ispartof><rights>2003 Elsevier Science B.V.</rights><rights>2003 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-5603bdad22d93ab8bcc9d2e2d3726ffc5178a4d06c01e27878b1dcad0eea49343</citedby><cites>FETCH-LOGICAL-c368t-5603bdad22d93ab8bcc9d2e2d3726ffc5178a4d06c01e27878b1dcad0eea49343</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0169-4332(03)00484-7$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14905945$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Tsushima, Ryo</creatorcontrib><creatorcontrib>Katayama, Mitsuhiro</creatorcontrib><creatorcontrib>Fujino, Toshiaki</creatorcontrib><creatorcontrib>Shindo, Masato</creatorcontrib><creatorcontrib>Okuno, Tomohisa</creatorcontrib><creatorcontrib>Oura, Kenjiro</creatorcontrib><title>Temperature dependence of flat Ge/Si(0 0 1) heterostructures as observed by CAICISS</title><title>Applied surface science</title><description>We have investigated temperature dependence of flat Ge/Si(0
0
1) heterostructures fabricated by hydrogen-surfactant mediated epitaxy, by means of coaxial impact-collision ion scattering spectroscopy (CAICISS). The transition temperature at the onset of surface roughening increases with the film thickness, which improves their thermal stability. Notably, for the thick films, the change in film morphology to a large island structure occurs in an almost first-order phase transition manner. These findings are consistent with our scanning electron microscopy (SEM) and atomic force microscopy (AFM) observations. The thickness dependence of the transition temperature can be correlated with strain relaxation at the surface of the initial film.</description><subject>Atomic, molecular, and ion beam impact and interactions with surfaces</subject><subject>CAICISS</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Electron and ion emission by liquids and solids; impact phenomena</subject><subject>Exact sciences and technology</subject><subject>Film morphology</subject><subject>Ge/Si heteroepitaxy</subject><subject>Hydrogen surfactant</subject><subject>Impact phenomena (including electron spectra and sputtering)</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface roughening</subject><subject>Surface structure and topography</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thermal stability</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLw0AQgBdRsFZ_grAXpT3Ezj6SbE5SgtZCwUPqednsTjCSNnU3LfTfmz7Qo5eZw3zz-gi5Z_DEgCWTog9ZJIXgIxBjAKlklF6QAVOpiOJYyUsy-EWuyU0IXwCM99UBKZa42qA33dYjdbjBtcO1RdpWtGpMR2c4KeoRUKBsTD-xQ9-Gzm_tgQ_UBNqWAf0OHS33NJ_O83lR3JKryjQB7855SD5eX5b5W7R4n83z6SKyIlFdFCcgSmcc5y4TplSltZnjyJ1IeVJVNmapMtJBYoEhT1WqSuascYBoZCakGJLH09yNb7-3GDq9qoPFpjFrbLdBcwVSylT1YHwCbX998Fjpja9Xxu81A31QqI8K9cGPBqGPCnXa9z2cF5hgTVN5s7Z1-GuWGcSZjHvu-cRh_-2uRq-DrQ8aXe3Rdtq19T-bfgD4lYQ1</recordid><startdate>20030630</startdate><enddate>20030630</enddate><creator>Tsushima, Ryo</creator><creator>Katayama, Mitsuhiro</creator><creator>Fujino, Toshiaki</creator><creator>Shindo, Masato</creator><creator>Okuno, Tomohisa</creator><creator>Oura, Kenjiro</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20030630</creationdate><title>Temperature dependence of flat Ge/Si(0 0 1) heterostructures as observed by CAICISS</title><author>Tsushima, Ryo ; Katayama, Mitsuhiro ; Fujino, Toshiaki ; Shindo, Masato ; Okuno, Tomohisa ; Oura, Kenjiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-5603bdad22d93ab8bcc9d2e2d3726ffc5178a4d06c01e27878b1dcad0eea49343</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Atomic, molecular, and ion beam impact and interactions with surfaces</topic><topic>CAICISS</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Electron and ion emission by liquids and solids; impact phenomena</topic><topic>Exact sciences and technology</topic><topic>Film morphology</topic><topic>Ge/Si heteroepitaxy</topic><topic>Hydrogen surfactant</topic><topic>Impact phenomena (including electron spectra and sputtering)</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface roughening</topic><topic>Surface structure and topography</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thermal stability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsushima, Ryo</creatorcontrib><creatorcontrib>Katayama, Mitsuhiro</creatorcontrib><creatorcontrib>Fujino, Toshiaki</creatorcontrib><creatorcontrib>Shindo, Masato</creatorcontrib><creatorcontrib>Okuno, Tomohisa</creatorcontrib><creatorcontrib>Oura, Kenjiro</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tsushima, Ryo</au><au>Katayama, Mitsuhiro</au><au>Fujino, Toshiaki</au><au>Shindo, Masato</au><au>Okuno, Tomohisa</au><au>Oura, Kenjiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature dependence of flat Ge/Si(0 0 1) heterostructures as observed by CAICISS</atitle><jtitle>Applied surface science</jtitle><date>2003-06-30</date><risdate>2003</risdate><volume>216</volume><issue>1</issue><spage>19</spage><epage>23</epage><pages>19-23</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>We have investigated temperature dependence of flat Ge/Si(0
0
1) heterostructures fabricated by hydrogen-surfactant mediated epitaxy, by means of coaxial impact-collision ion scattering spectroscopy (CAICISS). The transition temperature at the onset of surface roughening increases with the film thickness, which improves their thermal stability. Notably, for the thick films, the change in film morphology to a large island structure occurs in an almost first-order phase transition manner. These findings are consistent with our scanning electron microscopy (SEM) and atomic force microscopy (AFM) observations. The thickness dependence of the transition temperature can be correlated with strain relaxation at the surface of the initial film.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/S0169-4332(03)00484-7</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0169-4332 |
| ispartof | Applied surface science, 2003-06, Vol.216 (1), p.19-23 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Atomic, molecular, and ion beam impact and interactions with surfaces CAICISS Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electron and ion emission by liquids and solids impact phenomena Exact sciences and technology Film morphology Ge/Si heteroepitaxy Hydrogen surfactant Impact phenomena (including electron spectra and sputtering) Physics Solid surfaces and solid-solid interfaces Surface roughening Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thermal stability |
| title | Temperature dependence of flat Ge/Si(0 0 1) heterostructures as observed by CAICISS |
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