The effect of thickness on the dielectric properties of highly (111) oriented Pb(Zr0.53Ti0.47)O3 thin films prepared by a simple sol-gel route
Lead zirconate titanate Pb(Zr0.53Ti0.47)O3 (PZT) ferroelectric thin films of various thicknesses were grown on Pt(111)/Ti/SiO2/Si(100) substrates by a simple sol-gel process, without reflux or high temperature distillation to remove water. The thin films were annealed at 550-600DGC in an oxygen atmo...
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| Veröffentlicht in: | Microelectronic engineering 2003-05, Vol.65 (4), p.387-393 |
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| creator | TANG, X. G JIANG, L. L DING, A. L |
| description | Lead zirconate titanate Pb(Zr0.53Ti0.47)O3 (PZT) ferroelectric thin films of various thicknesses were grown on Pt(111)/Ti/SiO2/Si(100) substrates by a simple sol-gel process, without reflux or high temperature distillation to remove water. The thin films were annealed at 550-600DGC in an oxygen atmosphere by rapid thermal annealing (RTA), and highly (111)-oriented PZT thin films have been obtained. The microstructure and surface morphologies of the thin films have studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). AFM images shown that the highly (111) oriented PZT thin films on Pt/Ti/SiO2/Si substrates with grain sizes of 0.2-0.3 and 2-3 *mm, and root mean square roughnesses of 0.92 and 34 nm, for PZT films with thicknesses of 0.3 and 0.56 *mm, respectively. The remanent polarization (Pr) and coercive electric field (Ec) values were 32.2 *mC/cm2 and 79.9 kV/cm, 27.7 *mC/cm2 and 54.4 kV/cm; at 100 kHz, the dielectric constant and dissipation factor were 539 and 0.066, 821 and 0.029, respectively, for PZT films with thicknesses of 0.3 and 0.56 *mm. |
| doi_str_mv | 10.1016/S0167-9317(03)00006-6 |
| format | Article |
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The remanent polarization (Pr) and coercive electric field (Ec) values were 32.2 *mC/cm2 and 79.9 kV/cm, 27.7 *mC/cm2 and 54.4 kV/cm; at 100 kHz, the dielectric constant and dissipation factor were 539 and 0.066, 821 and 0.029, respectively, for PZT films with thicknesses of 0.3 and 0.56 *mm.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/S0167-9317(03)00006-6</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier Science</publisher><subject>Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Electronics ; Exact sciences and technology ; Materials ; Niobates, titanates, tantalates, pzt ceramics, etc ; Physics</subject><ispartof>Microelectronic engineering, 2003-05, Vol.65 (4), p.387-393</ispartof><rights>2003 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c227t-e54d1dc4507d3cf481da2df3e969e27af369da3c609883aef1d1915556383ffe3</citedby><cites>FETCH-LOGICAL-c227t-e54d1dc4507d3cf481da2df3e969e27af369da3c609883aef1d1915556383ffe3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14727555$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>TANG, X. 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AFM images shown that the highly (111) oriented PZT thin films on Pt/Ti/SiO2/Si substrates with grain sizes of 0.2-0.3 and 2-3 *mm, and root mean square roughnesses of 0.92 and 34 nm, for PZT films with thicknesses of 0.3 and 0.56 *mm, respectively. The remanent polarization (Pr) and coercive electric field (Ec) values were 32.2 *mC/cm2 and 79.9 kV/cm, 27.7 *mC/cm2 and 54.4 kV/cm; at 100 kHz, the dielectric constant and dissipation factor were 539 and 0.066, 821 and 0.029, respectively, for PZT films with thicknesses of 0.3 and 0.56 *mm.</description><subject>Applied sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Dielectric, piezoelectric, ferroelectric and antiferroelectric materials</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Materials</subject><subject>Niobates, titanates, tantalates, pzt ceramics, etc</subject><subject>Physics</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNpFkN9OwyAUh4nRxDl9BBNuNNtFJ5S2tJdm8V-yZCbOG28Ig8OGsrZCd7GX8Jml26JcQE74zg_Oh9A1JRNKaHH3FjeeVIzyEWFjEleRFCdoQEvOkjwvylM0-EPO0UUInyTWGSkH6GexBgzGgOpwY3C3tuqrhhBwU8cCsLbg4p23Cre-acF3FkJPru1q7XZ4RCkd48ZbqDvQ-HU5-vBkkrOFJZOMj-esj6yxsW4TYgK00kdsucMSB7tpHeDQuGQFDvtm28ElOjPSBbg6nkP0_viwmD4ns_nTy_R-lqg05V0CeaapVllOuGbKZCXVMtWGQVVUkHJpWFFpyVRBqrJkEgzVtKJ5dMFKFodlQ3R7yI1DfW8hdGJjgwLnZA3NNoi0JFmaVlUE8wOofBOCByNabzfS7wQlorcv9vZFr1YQJvb2RRH7bo4PyKCkM17Wyob_5oynPP6H_QJnDoQ8</recordid><startdate>200305</startdate><enddate>200305</enddate><creator>TANG, X. 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L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c227t-e54d1dc4507d3cf481da2df3e969e27af369da3c609883aef1d1915556383ffe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Applied sciences</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Dielectric, piezoelectric, ferroelectric and antiferroelectric materials</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Materials</topic><topic>Niobates, titanates, tantalates, pzt ceramics, etc</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>TANG, X. G</creatorcontrib><creatorcontrib>JIANG, L. L</creatorcontrib><creatorcontrib>DING, A. L</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>TANG, X. G</au><au>JIANG, L. L</au><au>DING, A. L</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of thickness on the dielectric properties of highly (111) oriented Pb(Zr0.53Ti0.47)O3 thin films prepared by a simple sol-gel route</atitle><jtitle>Microelectronic engineering</jtitle><date>2003-05</date><risdate>2003</risdate><volume>65</volume><issue>4</issue><spage>387</spage><epage>393</epage><pages>387-393</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>Lead zirconate titanate Pb(Zr0.53Ti0.47)O3 (PZT) ferroelectric thin films of various thicknesses were grown on Pt(111)/Ti/SiO2/Si(100) substrates by a simple sol-gel process, without reflux or high temperature distillation to remove water. The thin films were annealed at 550-600DGC in an oxygen atmosphere by rapid thermal annealing (RTA), and highly (111)-oriented PZT thin films have been obtained. The microstructure and surface morphologies of the thin films have studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). AFM images shown that the highly (111) oriented PZT thin films on Pt/Ti/SiO2/Si substrates with grain sizes of 0.2-0.3 and 2-3 *mm, and root mean square roughnesses of 0.92 and 34 nm, for PZT films with thicknesses of 0.3 and 0.56 *mm, respectively. The remanent polarization (Pr) and coercive electric field (Ec) values were 32.2 *mC/cm2 and 79.9 kV/cm, 27.7 *mC/cm2 and 54.4 kV/cm; at 100 kHz, the dielectric constant and dissipation factor were 539 and 0.066, 821 and 0.029, respectively, for PZT films with thicknesses of 0.3 and 0.56 *mm.</abstract><cop>Amsterdam</cop><pub>Elsevier Science</pub><doi>10.1016/S0167-9317(03)00006-6</doi><tpages>7</tpages></addata></record> |
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| ispartof | Microelectronic engineering, 2003-05, Vol.65 (4), p.387-393 |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Electronics Exact sciences and technology Materials Niobates, titanates, tantalates, pzt ceramics, etc Physics |
| title | The effect of thickness on the dielectric properties of highly (111) oriented Pb(Zr0.53Ti0.47)O3 thin films prepared by a simple sol-gel route |
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