Thermal stress characteristics of two-level Al(Cu) interconnect structure

Thermal stress characteristics of single-level and two-level Al(Cu) interconnects passivated with tetraethyl orthosilicate oxide were measured using x-ray diffraction. Thermal stresses of the second-level metal lines were deduced from the experimental data based on an analysis of the x-ray absorption in a two-level interconnect structure. The confinement effect from the substrate on the stress characteristics of metal lines at different interconnect levels was investigated. Thermal stress behavior of the second-level lines indicated that the confinement effect from the Si substrate is reduced compared to the single-level lines, resulting in reduced levels of hydrostatic and shear stresses.